DATA SHEET MMBD914 SURFACE MOUNT SWITCHINGDIODE VOLTAGE 100 Volts POWER SOT- 23 225 mWatts Unit: inch (mm) FEATURES • Very fast reverse recovery (Trr < 2.0 ns typical) .103(2.60) • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 99% Sn above .083(2.10) .066(1.70) .086(2.20) .056(1.40) .047(1.20) • Surface mount package ideally suited for automatic insertion .007(.20)MIN .119(3.00) .110(2.80) • Low capacitance (4pF @ 0V typical) .006(.15) .002(.05) MECHANICAL DATA .044(1.10) .006(.15)MAX Terminals: Solderable per MIL-STD-202G, Method 208 .020(.50) .013(.35) Approx. Weight: 0.008 gram .035(0.90) Case: SOT-23, Plastic Marking: T1 ABSOLUTE RATINGS PA RA M E TE R S ym b o l Va l ue U ni t s VR 100 V V RRM 100 V 0 .2 A IF S M 2 .0 A S ym b o l Va l ue U ni t s P o we r D i s s i p a ti o n (No te 1 ) P TOT 225 mW The r m a l R e s i s t a nc e , J unc t i o n t o A m b i e nt ( N o t e 1 ) Rθ J A 556 J u n c t i o n Te m p e r a t u r e TJ -5 5 to 1 5 0 O C S t o r a g e Te m p e r a t u r e T S TG -5 5 to 1 5 0 O C M a xi m um R e ve r s e V o l t a g e P e a k R e ve r s e V o l t a g e C o nt i nuo us F o r w a r d C ur r e nt N o n - r e p e t i t i v e P e a k F o r w a r d S u r g e C u r r e n t a t t = 1 . 0 us I F THERMAL CHARACTERISTICS PA RA M E TE R O C /W Note 1. FR-5 Boand = 1.0x0.75x0.062 in. SINGLE 3 1 STAD-NOV.27.2004 2 PAGE . 1 ELECTRICAL CHARACTERISTICS (TJ=25oC, unless otherwise noted) PARAMETER SYMBOL Reverse Breakdown Voltage V (BR) Reverse Current TEST CONDITION MIN. TYP. MAX. UNIT 100 - - V V R=20V - - 0.025 V R=75V - - 5.0 IR=100uA IR uA Forward Voltage VF IF =10mA - - 1.0 V Total Capacitance CT V R=0V, f =1MHz - - 4.0 pF Reverse Recovery Time (Figure 1) T RR I F =I R=10mA, R L=100O - - 4.0 ns 820Ω 2.0kΩ +10 V 100 µH 0.1 µF 0.1 µF IF ► DUT 50Ω Output Pulse Generator Notes: Figure 1. STAD-NOV.27.2004 50Ω Input Sampling Oscilloscope 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 10.000 100 TJ = 150 ˚C 1.000 Forward Current, IF (mA) Reverse Leakage Current, I R (uA) TJ = 150 ˚C TJ = 75 ˚C 0.100 0.010 10 TJ = 25 ˚C TJ = 75 ˚C 1 TJ = 25 ˚C TJ = -25 ˚C 0.1 0.001 0 20 40 60 0.0 80 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage, VF (V) Reverse Voltage, VR (V) Fig. 3. Forward Current vs. Forward Voltage Fig. 2. Reverse Current vs. Reverse Voltage 2.5 Capacitance (pF) 2 1.5 1 0.5 0 0 10 20 30 40 50 60 70 80 Reverse Voltage, VR (V) Fig. 4. Capacitance vs. Reverse Voltage STAD-NOV.27.2004 PAGE . 3 MOUNTING PAD LAYOUT Unit: inch (mm) 0.078(2.0) 0.035(0.9) SOT-23 0.031(0.8) 0.037(0.95) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-NOV.27.2004 PAGE . 4