MA4AGSW900-287T AIGaAs PIN Diode High Isolation SPST Switch SOT-23 Package Outline (Topview) Features n n n n V 1.00 31 dB Isolation @ 0 Volts @ 3 GHz 0.8 dB Loss @ 10 mA @ 3 GHz < 10 nS Switching Speed Useable from 50 MHz to 6.0 GHz GND Description M/A-COM's MA4AGSW900-287T is a Gallium Arsenide SPST PIN Diode Switch that makes use of Series Diodes featuring Lower Loss, Higher Isolation and Faster Switching Speed. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The switch die is fully passivated with silicon nitride and has an additional layer of a polymer for scratch and impact protection. This protective polymer coating provides additional moisture protection to the SOT-23 assembly. Applications The small 20 fF capacitance, and the low 3.0 Ω “ ON “ resistance of the GaAs PIN diodes allow for higher isolation at zero volt bias and lower insertion loss vs. comparable SPST switches. This switch is designed for use in applications requiring improved RF performance, simple D.C. Bias, and small device size. J1 J2 Absolute Maximum Ratings1 Parameter Value Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C Dissipated RF & DC Power Incident RF Power 50 mW +20 dBm C.W. Mounting Temperature +235 °C for 10 seconds 1. Exceeding any of these values may result in permanent damage Electrical Specifications @ TA = 25 °C Parameter and Test Conditions 0.5 GHz to 3.0 GHz Frequency Range Insertion Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz Units Minimum Value Typical Value Maximum Value dB - 0.8 1.3 Isolation @ 0 Volts @ 3 GHz dB 30 33.0 - Input / Output Return Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz dB - 13.0 - nS - 10.0 - 1 Switching Speed (10 to 90% RF Voltage) NOTES: 1. Pin Labeled J1 is the Diode’s Anode 2. Pin Labeled J2 is the Diode’s Cathode 3. Pin Labeled GND must be connected to RF & DC Ground 1. Switching speed is measured using a TTL Controlled , +/- 5 V PIN Diode Driver. Driver delay is not included. AIGaAs PIN Diode High Isolation SPST Switch MA4AGSW900-287T V 1.00 Typical RF Performance MA4AGSW900-287 Insertion Loss vs DC Bias 0.00 -0.20 -0.40 -0.60 -0.80 -1.00 -1.20 Bias = 3 mA Bias = 5 mA Bias = 10 mA Bias = 30 mA -1.40 -1.60 -1.80 -2.00 500 1000 1500 2000 2500 3000 2500 3000 Frequency ( GHz ) MA4AGSW900-287 Return Loss vs D.C. Bias 0.0 Bias = 3 mA Bias = 5 mA Bias = 10 mA Bias = 30 mA -5.0 -10.0 -15.0 -20.0 -25.0 500 1000 1500 2000 Frequency ( GHz ) 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AIGaAs PIN Diode High Isolation SPST Switch MA4AGSW900-287T V 1.00 Typical RF Performance MA4AGSW900-287 Isolation at 0V D.C. Bias 0 -5 Bias = 0V -10 -15 -20 -25 -30 -35 -40 -45 -50 500 1000 1500 2000 2500 3000 Frequency ( GHz ) 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AIGaAs PIN Diode High Isolation SPST Switch MA4AGSW900-287T V 1.00 Mounting Information The illustration indicates the recommended mounting pad configuration for the SOT-23package. Solder paste containing flux should be screened onto the pads to a thickness of 0.005- 0.007 inches. The plastic package device is placed in position, firmly adhering to the solder past. Permanent attachment is performed by a reflow soldering procedure during which the tab temperature does not exceed +275 °C and the body temperature does not exceed +250 °C. SOT-23 Circuit Layout .030 min. 0.80 .090 2.2 .035 min. 0.90 .037 0.95 0.75 1.9 Dimenstions: inches mm SOT-23 SOT-23 (Case Style 287) Case Style 287 F N A D B M G K L H E J Millimeters Inches Dim C A Min. - Max. 0.048 Min. - Max. 1.22 B - 0.008 - 0.20 C - 0.040 - 1.00 D 0.013 0.020 0.35 0.50 E 0.003 0.006 0.08 0.15 F G 0.110 0.047 0.119 0.056 2.80 1.20 3.00 1.40 H 0.037 typical 0.95 typical J 0.075 typical 1.90 typical K - 0.103 - 2.60 L - 0.024 - 0.60 Dim M Min. 10° max.1 N 2° … 30° Note: 1. Applicable on all sides 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 AIGaAs PIN Diode High Isolation SPST Switch MA4AGSW900-287T V 1.00 Static Sensitivity Gallium Arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. Operation of the MA4AGSW900-287T SPST Switch Successful operation of the SPST Switch is accomplished by connecting J1 ( PIN 1 ) to a RF Bias Network , J2 ( PIN 2 ) to a DC Return Network , and SOT-23 Ground ( PIN 3 ) to Circuit RF and D.C. Ground. Approximately + 3.0 V @ + 5 mA will create the Insertion Loss State, and 0 V will produce the Isolation State. The Isolation value is improved slightly by applying –3 V D.C. Bias. The SPST switch can be driven from a simple + 5 V TTL Gate Driver. SPST Schematic D.C. Bias GND GND PIN 3 GND RF Input RF Output PIN1 (J1) PIN2 (J2) MA4AGSW900-287 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300