MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead(Pb)-Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the 100mA~20mA Range in Common emitter or Common base mode of operations. SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO IC Value 25 30 3 50 mA PD 225 mW 1.8 mW/°C Thermal Resistance , Junction Ambient RθJA 556 °C/W Junction Temperature TJ Tstg +150 °C -55~150 °C Collector Current - Continuous Total Power Dissipation FR-5 Board (1) Unit V V V TA =25°C Derate above =25°C Storage Temperature 1. Tj = 25°C unless otherwise specified. Device Marking MMBTH10=3EM , HT10 WEITRON http://www.weitron.com.tw 1/6 09-Feb-07 MMBTH10 ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted ) (Countinued) Characteristics Collector-Emitter Voltage (IC =10mA , IB = 0 ) Symbol VCEO VCBO VEBO I CBO I EBO Min 25 30 3 - Typ - Max - - - 100 100 Unit V V V nA nA hFE 60 - - - VCE(sat) - - 0.5 V VBE(on) - - 0.95 V Transition frequency (IC =4mA , VCE = 10V , f =100MHz ) fT 0.65 1.1 - GHZ Collector-Base Capacitance(VCB=10V ,IE = 0 , f =1.0MHz ) Ccb - - 0.7 pF Common-Base Feedback Capacitance (VCB= 10V , IE= 0 , f = 1MHz ) Crb - - 0.65 pF rb’Cc - - 9.0 ps Collector-Base Voltage (IC =10µA , IE = 0) Emitter-Base Voltage (IE =10µA , IC =0) Collector cut-off current ( IE = 0 , VCB = 25V ) Emitter cut-off current ( IC = 0 , VEB = 2.0V ) DC current gain (IC=4mA , VCE = 10V ) Collector-Emitter Saturation (IC=4mA ,IB = 0.4mA ) Base-Emitter On Voltage (IC=4mA , VCE = 10V ) Collector Base Time Constant (IC =4mV , VCB = 10V , f = 31.8MHz ) WEITRON http://www.weitron.com.tw 2/6 - 09-Feb-07 MMBTH10 Typical Characteristics 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current Vce = 5V 80 125 °C 25 °C 40 20 β = 10 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 P 42 VB E(ON)- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 0.9 - 40 °C 0.8 25 °C 0.7 125 °C 0.6 0.5 0.4 0.3 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 20 25 °C - 40 °C 0.1 1 10 I C - COLLECTOR CURRENT (mA) 20 Base-Emitter ON Voltage vs Collector Current 1 V CE = 5V - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.2 0.01 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 P 42 P 42 Power Dissipation vs Ambient Temperature Collector-Cutoff Current vs Ambient Temperature 350 PD - POWER DISSIPATION (mW) 10 300 VCB = 30V SOT-23 250 200 1 0.1 25 125 °C 0.1 0.05 - 40 °C 0 0.1 VBESAT- BASE-EMITTER VOLTAGE (V) 0.2 0.15 60 ICBO- COLLECTOR CURRENT (nA) Collector-Emitter Saturation Voltage vs Collector Current 150 100 50 75 100 125 ° T A - AMBIENT TEMPERATURE ( C) WEITRON http://www.weitron.com.tw 50 0 150 3/6 0 25 50 75 100 TEMPERATURE ( o C) 125 150 09-Feb-07 MMBTH10 Common Base Y Parameters vs. Frequency Output Admittance Yob - OUTPUT ADMITTANCE (mmhos) Y ib - INPUT ADMITTANCE (mmhos) Input Admittance 120 12 80 g 40 VCE = 10V 0 I C = 5 mA 10 ib -40 b ib -80 -120 100 200 500 f - FREQUENCY (MHz) 1000 VCE = 10V I C = 5 mA 8 6 b ob 4 g ob 2 0 100 Forward Transfer Admittance 120 8 b fb 80 6 40 0 g -40 -120 100 200 500 f - FREQUENCY (MHz) WEITRON http://www.weitron.com.tw Reverse Transfer Admittance VCE = 10V I C = 5 mA 4 fb VCE = 10V I C = 5 mA -80 1000 P 42 (BASE) Yrb - REVERSE ADMITTANCE (mmhos) Y fb - FORWARD ADMITTANCE (mmhos) P 42 (BASE) 200 500 f - FREQUENCY (MHz) -b rb 2 0 100 1000 -g rb 200 500 f - FREQUENCY (MHz) ( 4/6 1000 S ) 09-Feb-07 MMBTH10 Common Emitter Y Parameters vs. Frequency Yoe - OUTPUT ADMITTANCE (mmhos) Output Admittance 6 VCE = 10V I C = 2 mA 20 g VCE = 10V 5 ie 16 I C = 2 mA 4 12 b oe 3 b ie 8 2 1 4 0 100 200 500 f - FREQUENCY (MHz) 1000 40 I C = 2 mA fe 20 Reverse Transfer Admittance 1 0.8 VCE = 10V I C = 2 mA -b re 0.6 0 -20 0.4 -40 -60 100 1000 1.2 VCE = 10V g 200 500 f - FREQUENCY (MHz) P 42 (EMITTER) Forward Transfer Admittance 60 g oe 0 100 Yre - REVERSE ADMITTANCE (mmhos) Y fe - FORWARD ADMITTANCE (mmhos) Y ie - INPUT ADMITTANCE (mmhos) Input Admittance 24 0.2 b fe 200 500 f - FREQUENCY (MHz) 1000 P 42 (EMITTER) WEITRON http://www.weitron.com.tw 5/6 0 100 -g re 200 500 f - FREQUENCY (MHz) 1000 09-Feb-07 MMBTH10 SOT-23Package Outline Dimensions Unit:mm Dim A B C D E G H J K L M A B TOP V I EW E G C D H K J WEITRON http://www.weitron.com.tw L Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 M 6/6 09-Feb-07