ESMT M52S128168A-10BG

ESMT
Preliminary
M52S128168A
Revision History
Revision 1.0 (May. 29, 2007)
-Original
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
1/47
ESMT
Preliminary
M52S128168A
SDRAM
1M x 16 Bit x 4 Banks
Synchronous DRAM
FEATURES
y
y
y
y
y
y
y
y
y
y
MAX
PRODUCT NO.
2.5V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
EMRS cycle with address
All inputs are sampled at the positive going edge of the
system clock
Special function support
- PASR (Partial Array Self Refresh)
- TCSR (Temperature Compensated Self Refresh)
- DS (Driver Strength)
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
PACKAGE
Comments
M52S128168A-7.5TG 133MHz
54 TSOP II
Pb-free
M52S128168A-7.5BG 133MHz
54 Ball FBGA
Pb-free
FREQ.
M52S128168A-10TG
100MHz
54 TSOP II
Pb-free
M52S128168A-10BG
100MHz
54 Ball FBGA
Pb-free
ORDERING INFORMATION
GENERAL DESCRIPTION
The M52S128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words
by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high performance memory system applications.
PIN ASSIGNMENT (Top View)
VDD
DQ0
VDDQ
1
2
3
4
5
6
7
8
54
53
52
51
50
49
48
47
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
Elite Semiconductor Memory Technology Inc.
1
2
3
A
VSS
DQ15
B
DQ14
C
4
5
6
7
8
9
VSSQ
VDDQ
DQ0
VDD
DQ13
VDDQ
VSSQ
DQ2
DQ1
DQ12
DQ11
VSSQ
VDDQ
DQ4
DQ3
D
DQ10
DQ9
VDDQ
VSSQ
DQ6
DQ5
E
DQ8
NC
VSS
VDD
LDQM
DQ7
F
UDQM
CLK
CKE
CAS
RAS
WE
G
NC
A11
A9
BA0
BA1
CS
H
A8
A7
A6
A0
A1
A10
J
VSS
A5
A4
A3
A2
VDD
54 Ball FBGA
(8x8mm)
(mm ball pitch)
Publication Date: May. 2007
Revision: 1.0
2/47
ESMT
Preliminary
M52S128168A
FUNCTIONAL BLOCK DIAGRAM
CKE
Clock
Generator
Bank D
Bank C
Bank B
Address
Mode
Register
Row
Address
Buffer
&
Refresh
Counter
Row Decoder
CLK
Bank A
CAS
WE
Column Decoder
Data Control Circuit
Input & Output
Buffer
RAS
L(U)DQM
Column
Address
Buffer
&
Refresh
Counter
Latch Circuit
CS
Control Logic
Command Decoder
Sense Amplifier
DQ
PIN FUNCTION DESCRIPTION
PIN
NAME
INPUT FUNCTION
CLK
System Clock
Active on the positive going edge to sample all inputs
CS
Chip Select
Disables or enables device operation by masking or enabling all
inputs except CLK , CKE and L(U)DQM
CKE
Clock Enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior new command.
Disable input buffers for power down in standby.
A0 ~ A11
Address
Row / column address are multiplexed on the same pins.
Row address : RA0~RA11, column address : CA0~CA7
BA0 , BA1
Bank Select Address
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with
RAS low.
Enables row access & precharge.
Latches column address on the positive going edge of the CLK with
CAS
Column Address Strobe
WE
Write Enable
L(U)DQM
Data Input / Output Mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
DQ0 ~ DQ15
Data Input / Output
Data inputs / outputs are multiplexed on the same pins.
VDD / VSS
Power Supply / Ground
Power and ground for the input buffers and the core logic.
VDDQ / VSSQ
Data Output Power / Ground
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
NC
No Connection
This pin is recommended to be left No Connection on the device.
CAS low.
Enables column access.
Enables write operation and row precharge.
Elite Semiconductor Memory Technology Inc.
Latches data in starting from CAS , WE active.
Publication Date: May. 2007
Revision: 1.0
3/47
ESMT
Preliminary
M52S128168A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 3.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Storage temperature
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C )
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
VDD, VDDQ
2.3
2.5
2.7
V
Input logic high voltage
VIH
0.8xVDDQ
2.5
VDDQ+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.3
V
2
Output logic high voltage
VOH
VDDQ-0.2
-
-
V
IOH = -0.1mA
Output logic low voltage
Supply voltage
NOTE
VOL
-
-
0.2
V
IOL = 0.1mA
Input leakage current
IIL
-2
-
2
μA
3
Output leakage current
IOL
-2
-
2
μA
4
Note:
1. VIH(max) = 3.0V AC for pulse width ≤ 3ns acceptable.
2. VIL(min) = -1.0V AC for pulse width ≤ 3ns acceptable.
3. Any input 0V ≤ VIN ≤ VDDQ, all other pins are not under test = 0V.
4. Dout is disabled , 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 2.5V, TA = 25 °C , f = 1MHZ)
PARAMETER
SYMBOL
MIN
MAX
UNIT
CIN1
1.5
3.0
pF
(CLK, CKE, CS , RAS , CAS , WE &
L(U)DQM)
CIN2
1.5
3.5
pF
Data input/output capacitance (DQ0 ~ DQ15)
COUT
2.0
4.5
pF
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
4/47
ESMT
Preliminary
M52S128168A
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = 0 to 70 °C
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
CAS
Latency
Test Condition
Version
-7.5
-10
65
60
Unit Note
ICC1
Burst Length = 1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA
ICC2P
CKE ≤ VIL(max), tCC =15ns
0.5
mA
ICC2PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
0.5
mA
10
mA
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns
mA
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
5
mA
ICC3P
CKE ≤ VIL(max), tCC =15ns
5
mA
ICC3PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
2
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=10ns
Input signals are changed one time during 20ns
20
mA
ICC3NS
CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞
Input signals are stable
15
mA
Operating Current
(Burst Mode)
ICC4
IOL= 0mA, Page Burst
All Band Activated, tCCD = tCCD (min)
70
60
Refresh Current
ICC5
tRC ≥ tRC(min)
130
TCSR range
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
Self Refresh Current
Deep Power Down
Current
1
ICC6
ICC7
CKE ≤ 0.2V
mA
1
120
mA
2
45
70
°C
4 Banks
200
330
2 Bank
150
230
1 Bank
130
190
CKE ≤ 0.2V
10
uA
uA
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 64ms. Addresses are changed only one time during tCC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
5/47
ESMT
Preliminary
M52S128168A
AC OPERATING TEST CONDITIONS (VDD=2V ± 0.1V,TA= 0 °C ~ 70 °C )
Parameter
Input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
0.9 x VDDQ / 0.2
0.5 x VDDQ
tr / tf = 1 / 1
0.5 x VDDQ
See Fig.2
Unit
V
V
ns
V
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Version
-7.5
-10
Unit
Note
Row active to row active delay
tRRD(min)
15
20
ns
1
RAS to CAS delay
tRCD(min)
15
20
ns
1
Row precharge time
tRP(min)
15
20
ns
1
tRAS(min)
48
50
ns
1
us
-
ns
1
Row active time
tRAS(max)
100
@Operating
tRC(min)
@Auto refresh
tRFC(min)
80
ns
1,5
Last data in to new col. Address delay
tCDL(min)
1
CLK
2
Last data in to row precharge
tRDL(min)
2
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. Address to col. Address delay
tCCD(min)
1
CLK
3
Mode Register command to Active or Refresh Command
tMRD(min)
2
CLK
-
CAS latency=3
2
ea
4
CAS latency=2
1
tBEF(max)
64
ms
6
Row cycle time
Number of valid output data
Refresh period(4,096 rows)
63
90
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
3. Minimum delay is required to complete write.
4. All parts allow every cycle column address change.
5. In case of row precharge interrupt, auto precharge and read burst stop.
The earliest a precharge command can be issued after a Read command without the loss of data is CL+BL-2 clocks
5. A new command may be given tRFC after self refresh exit.
6. A maximum of eight consecutive AUTO REFRESH commands (with tRFCmin) can be posted to any given SDRAM,and
the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is
8x15.6μs.)
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
6/47
ESMT
Preliminary
M52S128168A
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CLK to valid
output delay
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
Symbol
tCC
tSAC
-7.5
Min
7.5
12
-10
Max
1000
Min
10
12
Max
1000
-
6
7
-
9
10
Unit
Note
ns
1
ns
1
Output data hold time
tOH
2.5
2.5
ns
2
CLK high pulse width
tCH
2.5
3
ns
3
CLK low pulse width
tCL
2.5
3
ns
3
Input setup time
tSS
2
2.5
ns
3
Input hold time
tSH
1
1
ns
3
CLK to output in Low-Z
tSLZ
1
1
ns
2
CLK to output in
Hi-Z
tSHZ
CAS Latency =3
CAS Latency =2
6
7
9
10
ns
*All AC parameters are measured from half to half.
Note: 1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
7/47
ESMT
Preliminary
M52S128168A
SIMPLIFIED TRUTH TABLE
COMMAND
CKEn-1
CKEn
H
X
CS RAS CAS
WE
DQM BA0 A10/AP
BA1
A11
A9~A0
Note
Mode Register set
Register
Extended Mode Register
set
Auto Refresh
Refresh
Self
Refresh
Entry
Bank Active & Row Addr.
Write &
Column Address
L
L
L
X
OP CODE
L
L
L
H
X
X
L
H
H
H
X
H
3
L
L
H
H
H
3
H
X
X
X
X
X
L
L
H
H
X
V
X
L
H
L
H
X
V
Auto Precharge Enable
L
H
L
L
X
V
H
H
X
L
H
H
L
X
H
X
L
L
H
L
X
Bank Selection
Precharge
All Banks
Entry
H
L
H
Entry
H
L
Precharge Power Down Mode
L
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
L
Exit
Exit
Column
Address
(A0~A7)
L
X
Auto Precharge Enable
Burst Stop
Column
Address
(A0~A7)
H
Auto Precharge Disable
X
H
No Operating Command
H
V
L
X
H
4,5
4
4,5
6
X
X
X
X
X
X
X
X
4
X
H
DQM
3
Row Address
L
H
3
X
Auto Precharge Disable
Clock Suspend or
Active Power Down
1,2
H
Exit
Read &
Column Address
L
H
X
X
X
L
H
H
H
V
X
X
X
7
(V = Valid , X = Don’t Care. H = Logic High , L = Logic Low )
Note :
1.OP Code : Operating Code
A0~A11 & BA0~BA1 : Program keys. (@ MRS). BA1=0 for MRS and BA1=1 for EMRS
2.MRS/EMRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS/EMRS.
3.Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge of command is meant by “Auto”.
Auto/self refresh can be issued only at all banks idle state.
4.BA0~BA1 : Bank select addresses.
If both BA0 and BA1 are “Low” at read ,write , row active and precharge ,bank A is selected.
If both BA0 is “Low” and BA1 is “High” at read ,write , row active and precharge ,bank B is selected.
If both BA0 is “High” and BA1 is “Low” at read ,write , row active and precharge ,bank C is selected.
If both BA0 and BA1 are “High” at read ,write , row active and precharge ,bank D is selected
If A10/AP is “High” at row precharge , BA0 and BA1 is ignored and all banks are selected.
5.During burst read or write with auto precharge. new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6.Burst stop command is valid at every burst length.
7.DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (write DQM latency is 0), but
makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
8/47
ESMT
Preliminary
M52S128168A
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address
BA0
BA1
A11
A10/AP
A9
A8
A7
Function
0
0
0
0
0
0
0
Test Mode
CAS Latency
A6
A5
A4
A3
CAS Latency
A2
BT
A1
A0
Burst Length
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT = 0
BT = 1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
Reserved
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
0
1
0
4
4
1
1
Reserved
0
1
1
3
0
1
1
8
8
1
0
0
Reserved
1
0
0
Reserved Reserved
1
0
1
Reserved
1
0
1
Reserved Reserved
1
1
0
Reserved
1
1
0
Reserved Reserved
1
1
1
Reserved
1
1
1
Full Page Reserved
Full Page Length : 256
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
9/47
ESMT
BA1 BA0 A11 A10
1
0
0
0
Preliminary
A9
0
A8 A7
0
0
A6
A5 A4
DS
0
A3
0
M52S128168A
A2 A1 A0
PASR
Address bus
Extended Mode Register Set
A2-A0
000
001
PASR
010
011
100
101
111
DS
A6-A5
00
01
10
11
WT=0
4Bank
2 Bank (BankA& BankB) or
(BA1=0)
1 Bank (BankA) or
(BA0=BA1=0)
R
R
R
R
Driver Strength
Full Strength
1/2 Strength
1/4 Strength
R
Remark R : Reserved
EXTENDED MODE REGISTER SET (EMRS)
The extended mode register stores for selecting PASR;TCSR;DS. The extended mode register set must be done before any active
command after the power up sequence. The extended mode register is written by asserting low on CS,RAS,CAS,WE and high on
BA1,low on BA0(The SDRAM should be in all bank precharge with CKE already high prior to writing into the extended more
register). The state of address pins
A0~An in the same cycle as CS,RAS,CAS,WE going low is written in the extended mode register. Refer to the table for specific
codes.
The extended mode register can be changed by using the same command and clock cycle requirements during operations as long
as all banks are in the idle state. The default value extended mode register is defined as half driving strength and all banks
refreshed.
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
10/47
ESMT
Preliminary
M52S128168A
BURST SEQUENCE (BURST LENGTH = 4)
Initial Adrress
Sequential
Interleave
A1
A0
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial
Sequential
Interleave
A2
A1
A0
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
11/47
ESMT
Preliminary
M52S128168A
DEVICE OPERATIONS
CLOCK (CLK)
MODE REGISTER SET (MRS)
The clock input is used as the reference for all SDRAM
operations. All operations are synchronized to the positive
going edge of the clock. The clock transitions must be
monotonic between VIL and VIH. During operation with CKE
high all inputs are assumed to be in valid state (low or high)
for the duration of setup and hold time around positive edge
of the clock for proper functionality and Icc specifications.
The mode register stores the data for controlling the
various operating modes of SDRAM. It programs the
CAS latency, burst type, burst length, test mode and
various vendor specific options to make SDRAM useful
for variety of different applications. The default value of
the mode register is not defined, therefore the mode
register must be written after power up to operate the
SDRAM. The mode register is written by asserting low
CLOCK ENABLE(CKE)
The clock enable (CKE) gates the clock onto SDRAM. If
CKE goes low synchronously with clock (set-up and hold
time same as other inputs), the internal clock suspended
from the next clock cycle and the state of output and burst
address is frozen as long as the CKE remains low. All other
inputs are ignored from the next clock cycle after CKE goes
low. When all banks are in the idle state and CKE goes low
synchronously with clock, the SDRAM enters the power
down mode from the next clock cycle. The SDRAM remains
in the power down mode ignoring the other inputs as long as
CKE remains low. The power down exit is synchronous as
the internal clock is suspended. When CKE goes high at
least “1CLK + tSS” before the high going edge of the clock,
then the SDRAM becomes active from the same clock edge
accepting all the input commands.
on CS , RAS , CAS and WE (The SDRAM should
be in active mode with CKE already high prior to writing
the mode register). The state of address pins A0~A11
and BA0~BA1 in the same cycle as CS , RAS , CAS
and WE going low is the data written in the mode
register. Two clock cycles is required to complete the
write in the mode register. The mode register contents
can be changed using the same command and clock
cycle requirements during operation as long as all banks
are in the idle state. The mode register is divided into
various fields into depending on functionality. The burst
length field uses A0~A2, burst type uses A3, CAS
latency (read latency from column address) use A4~A6,
test mode use A7~A8, vendor specific options use A9,
A10~A11 and BA1~BA0. A7~A8, A10/AP~A11 and
BA0~BA1 must be set to low for normal SDRAM
operation. Refer to the table for specific codes for
various burst length, burst type and CAS latencies.
BANK ADDRESSES (BA0~BA1)
This SDRAM is organized as four independent banks of
2,097,152 words x 16 bits memory arrays. The BA0~BA1
inputs are latched at the time of assertion of RAS and
CAS to select the bank to be used for the operation. The
banks addressed BA0~BA1 are latched at bank active, read,
write, mode register set and precharge operations.
ADDRESS INPUTS (A0~A11)
The 20 address bits are required to decode the 2,097,152
word locations are multiplexed into 12 address input pins
(A0~A11). The 12 row addresses are latched along with
RAS and BA0~BA1 during bank active command. The 8 bit
column addresses are latched along with CAS , WE and
BA0~BA1 during read or with command.
NOP and DEVICE DESELECT
When RAS , CAS and WE are high, The SDRAM
performs no operation (NOP). NOP does not initiate any new
operation, but is needed to complete operations which
require more than single clock cycle like bank activate, burst
read, auto refresh, etc. The device deselect is also a NOP
and is entered by asserting CS high. CS high disables
the command decoder so that RAS , CAS , WE and all
the address inputs are ignored.
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ESMT
Preliminary
M52S128168A
DEVICE OPERATIONS (Continued)
BANK ACTIVATE
The bank activate command is used to select a random row
in an idle bank. By asserting low on RAS and CS with
desired row and bank address, a row access is initiated. The
read or write operation can occur after a time delay of tRCD
(min) from the time of bank activation. tRCD is the internal
timing parameter of SDRAM, therefore it is dependent on
operating clock frequency. The minimum number of clock
cycles required between bank activate and read or write
command should be calculated by dividing tRCD (min) with
cycle time of the clock and then rounding of the result to the
next higher integer. The SDRAM has four internal banks in
the same chip and shares part of the internal circuitry to
reduce chip area, therefore it restricts the activation of four
banks simultaneously. Also the noise generated during
sensing of each bank of SDRAM is high requiring some time
for power supplies to recover before another bank can be
sensed reliably. tRRD (min) specifies the minimum time required
between activating different bank. The number of clock
cycles required between different bank activation must be
calculated similar to tRCD specification. The minimum time
required for the bank to be active to initiate sensing and
restoring the complete row of dynamic cells is determined by
tRAS (min). Every SDRAM bank activate command must satisfy
tRAS (min) specification before a precharge command to that
active bank can be asserted. The maximum time any bank
can be in the active state is determined by tRAS (max) and tRAS
(max) can be calculated similar to tRCD specification.
BURST READ
The burst read command is used to access burst of data on
consecutive clock cycles from an active row in an active
bank. The burst read command is issued by asserting low on
CS and RAS with WE being high on the positive edge
of the clock. The bank must be active for at least tRCD (min)
before the burst read command is issued. The first output
appears in CAS latency number of clock cycles after the
issue of burst read command. The burst length, burst
sequence and latency from the burst read command is
determined by the mode register which is already
programmed. The burst read can be initiated on any column
address of the active row. The address wraps around if the
initial address does not start from a boundary such that
number of outputs from each I/O are equal to the burst
length programmed in the mode register. The output goes
into high-impedance at the end of burst, unless a new burst
read was initiated to keep the data output gapless. The burst
read can be terminated by issuing another burst read or
burst write in the same bank or the other active bank or a
precharge command to the same bank. The burst stop
command is valid at every page burst length.
and burst sequence. By asserting low on CS , CAS
and WE with valid column address, a write burst is
initiated. The data inputs are provided for the initial
address in the same clock cycle as the burst write
command. The input buffer is deselected at the end of
the burst length, even though the internal writing can be
completed yet. The writing can be complete by issuing a
burst read and DQM for blocking data inputs or burst
write in the same or another active bank. The burst stop
command is valid at every burst length. The write burst
can also be terminated by using DQM for blocking data
and procreating the bank tRDL after the last data input to
be written into the active row. See DQM OPERATION
also.
DQM OPERATION
The DQM is used mask input and output operations. It
works similar to OE during operation and inhibits
writing during write operation. The read latency is two
cycles from DQM and zero cycle for write, which means
DQM masking occurs two cycles later in read cycle and
occurs in the same cycle during write cycle. DQM
operation is synchronous with the clock. The DQM
signal is important during burst interrupts of write with
read or precharge in the SDRAM. Due to asynchronous
nature of the internal write, the DQM operation is critical
to avoid unwanted or incomplete writes when the
complete burst write is required. Please refer to DQM
timing diagram also.
PRECHARGE
The precharge is performed on an active bank by
asserting low on clock cycles required between bank
activate and clock cycles required between bank
activate and CS , RAS , WE and A10/AP with valid
BA0~BA1 of the bank to be procharged. The precharge
command can be asserted anytime after tRAS (min) is
satisfy from the bank active command in the desired
bank. tRP is defined as the minimum number of clock
cycles required to complete row precharge is calculated
by dividing tRP with clock cycle time and rounding up to
the next higher integer. Care should be taken to make
sure that burst write is completed or DQM is used to
inhibit writing before precharge command is asserted.
The maximum time any bank can be active is specified
by tRAS (max). Therefore, each bank activate command. At
the end of precharge, the bank enters the idle state and
is ready to be activated again. Entry to power-down,
Auto refresh, Self refresh and Mode register set etc. is
possible only when all banks are in idle state.
BURST WRITE
The burst write command is similar to burst read command
and is used to write data into the SDRAM on consecutive
clock cycles in adjacent addresses depending on burst
length
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
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ESMT
Preliminary
M52S128168A
DEVICE OPERATIONS (Continued)
AUTO PRECHARGE
SELF REFRESH
The precharge operation can also be performed by using
auto precharge. The SDRAM internally generates the timing
to satisfy tRAS (min) and “tRP” for the programmed burst length
and CAS latency. The auto precharge command is issued at
the same time as burst write by asserting high on A10/AP,
the bank is precharge command is asserted. Once auto
precharge command is given, no new commands are
possible to that particular bank until the bank achieves idle
state.
The self refresh is another refresh mode available in the
SDRAM. The self refresh is the preferred refresh mode
for data retention and low power operation of SDRAM.
In self refresh mode, the SDRAM disables the internal
clock and all the input buffers except CKE. The refresh
addressing and timing is internally generated to reduce
power consumption. The self refresh mode is entered
BOTH BANKS PRECHARGE
A11 banks can be precharged at the same time by using
Precharge all command. Asserting low on CS , RAS , and
WE with high on A10/AP after all banks have satisfied tRAS
requirement, performs precharge on all banks. At the
end of tRP after performing precharge all, all banks are in idle
state.
(min)
from all banks idle state by asserting low on CS ,
RAS , CAS and CKE with high on WE . Once the self
refresh mode is entered, only CKE state being low
matters, all the other inputs including clock are ignored
to remain in the refresh.
The self refresh is exited by restarting the external clock
and then asserting high on CKE. This must be followed
by NOP’s for a minimum time of tRFC before the SDRAM
reaches idle state to begin normal operation.
AUTO REFRESH
The storage cells of SDRAM need to be refreshed every
64ms to maintain data. An auto refresh cycle accomplishes
refresh of a single row of storage cells. The internal counter
increments automatically on every auto refresh cycle to
refresh all the rows. An auto refresh command is issued by
asserting low on CS , RAS and CAS with high on CKE
and WE . The auto refresh command can only be asserted
with both banks being in idle state and the device is not in
power down mode (CKE is high in the previous cycle). The
time required to complete the auto refresh operation is
specified by tRFC (min). The minimum number of clock cycles
required can be calculated by driving tRFC with clock cycle
time and them rounding up to the next higher integer. The
auto refresh command must be followed by NOP’s until the
auto refresh operation is completed. The auto refresh is the
preferred refresh mode when the SDRAM is being used for
normal data transactions. The auto refresh cycle can be
performed once in 15.6us.
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Preliminary
M52S128168A
COMMANDS
Mode register set command
( CS , RAS , CAS , WE , BA1, BA0 = Low)
The DRAM has a mode register that defines how the device operates. In this
command, A0 through A11, BA0 and BA1 are the data input pins. After power on, the
mode register set command must be executed to initialize the device.
The mode register can be set only when all banks are in idle state. During 2CLK
(tMRD) following this command, the DRAM cannot accept any other commands.
Extended Mode register set command
( CS , RAS , CAS , WE , BA0 = Low ; BA1= High)
The DRAM has a extended mode register that defines how to set PASR, TCSR,
DS.
Activate command
( CS , RAS = Low, CAS , WE = High)
The DRAM has four banks, each with 4,096 rows.
This command activates the bank selected by BA1 and BA0 (BS) and a row
address selected by A0 through A11.
This command corresponds to a conventional DRAM’s RAS falling.
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Precharge command
( CS , RAS , WE = Low, CAS = High )
This command begins precharge operation of the bank selected by BA1 and BA0
(BS). When A10 is High, all banks are precharged, regardless of BA1 and BA0.
When A10 is Low, only the bank selected by BA1 and BA0 is precharged.
After this command, the DRAM can’t accept the activate command to the
precharging bank during tRP (precharge to activate command period).
This command corresponds to a conventional DRAM’s RAS rising.
Write command
( CS , CAS , WE = Low, RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
( CS , CAS = Low, RAS , WE = High)
Read data is available after CAS latency requirements have been met.
This command sets the burst start address given by the column address.
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M52S128168A
CBR (auto) refresh command
( CS , RAS , CAS = Low, WE , CKE = High)
This command is a request to begin the CBR refresh operation. The refresh address is
generated internally.
Before executing CBR refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a row
activate command.
During tRC period (from refresh command to refresh or activate command), the DRAM
cannot accept any other command.
Self refresh entry command
( CS , RAS , CAS , CKE = Low , WE = High)
After the command execution, self refresh operation continues while CKE remains low.
When CKE goes to high, the DRAM exits the self refresh mode.
During self refresh mode, refresh interval and refresh operation are performed internally,
so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Burst stop command
( CS , WE = Low, RAS , CAS = High)
This command terminates the current burst operation.
Burst stop is valid at every burst length.
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Preliminary
M52S128168A
No operation
( CS = Low , RAS , CAS , WE = High)
This command is not a execution command. No operations begin or terminate by this
command.
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ESMT
Preliminary
M52S128168A
BASIC FEATURE AND FUNCTION DESCRIPTIONS
1. CLOCK Suspend
1 ) Cl o c k S u sp e n d e d D u r in g W r i t e ( B L = 4 )
2 ) C lo c k S u s p e n d e d D u r i n g R e a d ( B L =4 )
CLK
CM D
WR
RD
CK E
Masked by C KE
I nt e r n al
CL K
DQ ( C L 2 )
D0
D1
D2
D3
DQ ( C L 3 )
D0
D1
D2
D3
Q0
Q1
Q2
Q3
Q0
Q1
Q2
N o t W r i tt e n
Q3
Su s pe nd ed D ou t
2. DQM Operation
2) Read Mas k (B L= 4)
1)W rite Mask (BL=4)
CLK
CMD
WR
RD
DQM
Ma s k e d b y D Q M
Ma s k e d b y D Q M
DQ(CL2)
D0
D1
D3
DQ(CL3)
D0
D1
D3
Q0
Hi- Z
Q2
Q3
Hi- Z
Q1
DQ M t o D at a -i n M ask = 0
Q2
Q3
DQ M to D at a- ou t M ask = 2
*Note2
3)DQM with clc ok su sp end ed (F ull Page Read )
CLK
CMD
RD
CKE
Inter nal
CLK
DQM
Hi- Z
DQ(CL2)
DQ(CL3)
Q0
Hi-Z
Hi-Z
Q1
Hi- Z
Q4
Q2
Hi-Z
Q6
Q7
Q8
Q9
Q7
Q8
Hi-Z
Q3
Q5
Q6
*Note :1. CKE to CLK disable/enable = 1CLK.
2. DQM masks data out Hi-Z after 2CLKs which should masked by CKE ”L”.
3. DQM masks both data-in and data-out.
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Preliminary
M52S128168A
3. CAS Interrupt (I)
* Not e 1
1 ) Re ad i nt e rr u pt e d b y R e a d ( B L= 4)
CLK
CMD
RD
RD
ADD
A
B
D Q ( CL 2 )
Q A0
DQ ( C L 3 )
QB0
QB1
QB2
QB3
QA0
Q B0
QB1
QB2
QB3
t
CCD
*N ote 2
2) W ri t e i n t e rr up t ed by W r it e ( B L = 2)
3 ) Wr it e i nt e rr u pt e d b y R e a d ( B L = 2)
CL K
CMD
WR
tC CD
ADD
DQ
WR
WR
t CC D
* N ote 2
A
B
DA 0
DB0
A
DB 1
t
CD L
*N ote 3
D Q ( CL 2 )
DA0
DQ ( C L 3 )
DA0
RD
* No t e 2
B
DB 0
DB1
DB0
DB1
t
CD L
*N ote 3
*Note : 1. By “interrupt” is meant to stop burst read/write by external before the end of burst.
By ” CAS interrupt ”, to stop burst read/write by CAS access; read and write.
2. tCCD : CAS to CAS delay. (=1CLK)
3. tCDL : Last data in to new column address delay. (=1CLK)
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Preliminary
M52S128168A
4. CAS Interrupt (II) : Read Interrupted by Write & DQM
( a) CL =2 ,B L= 4
CLK
i)CMD
RD
WR
DQM
DQ
ii)CMD
D0
RD
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
WR
DQM
Hi-Z
DQ
iii)CMD
D0
RD
WR
DQM
Hi-Z
DQ
iv)CMD
D0
WR
RD
DQM
DQ
Q0
HHi -i -ZZ
D0
D3
*Note1
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M52S128168A
(b) CL =3 ,B L= 4
CLK
RD
i)CMD
WR
DQM
DQ
D0
ii)CMD
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
WR
RD
DQM
DQ
D0
iii)CMD
WR
RD
DQM
D0
DQ
iv)CMD
RD
WR
DQM
Hi-Z
DQ
v)CM D
D0
RD
WR
DQM
Hi-Z
DQ
Q0
D0
D3
*Note1
*Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
5. Write Interrupted by Precharge & DQM
CLK
CMD
*Note3
WR
*Note2
DQM
DQ
D0
D1
D2
D3
Ma s k e d b y D Q M
*Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt
but only another bank precharge of four banks operation.
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M52S128168A
6. Precharge
1)Normal W rit e (BL=4)
2) Norm al R ead (B L= 4)
CLK
CLK
CMD
WR
DQ
D0
PRE
CMD
RD
PRE
CL=2
Q2
Q3
*Note2
D1
D2
DQ(CL2)
D3
tRD L
Q0
Q1
PRE CL= 3
CMD
*Note1
*Note2
DQ( CL3)
Q0
Q1
Q2
Q3
.
7. Auto Precharge
1)Normal W rit e (BL=4)
2) Normal Read (B L= 4 )
CLK
CMD
DQ
CLK
CMD
WR
D0
D1
D2
DQ(CL2)
D3
tRDL
RD
D0
D1
D2
D3
D0
D1
D2
(min )
DQ(CL3)
D3
*Note3
Aut o Pr ech ar ge st ar t s
*Note3
Auto Pr ech arge st art s
*Note : 1. tRDL : Last data in to row precharge delay.
2. Number of valid output data after row precharge : 1,2 for CAS Latency = 2,3 respectively.
3. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
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M52S128168A
8. Burst Stop & Interrupted by Precharge
1) W ri te B ur s t S t op ( BL= 8 )
1) W ri t e in t err up t ed by pr ec ha rg e ( B L= 4)
CLK
CLK
*N ote3
CM D
CM D
ST OP
WR
WR
PRE
t R DL
*N ote4
DQ M
DQ
DQ M
D0
D1
D3
D2
D4
t B DL
DQ
D5
D1
Mask Mask
*N ote1
2 )R e ad B ur s t S t op (B L= 4)
2 )R ea d i nt er ru pt ed by pr ec har ge (B L =4)
CL K
CMD
D0
CL K
RD
CMD
STO P
*N ote5
RD
PRE
*N ote2
DQ ( C L 2 )
Q0
Q1
* Not e 2
D Q( C L3 )
Q0
Q1
D Q( C L 2 )
D Q ( CL 3 )
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
9. MRS
1 )M o d e R e g is t e r S e t
CLK
*N o t e 6
CMD
PRE
t RP
*Note:
ACT
M RS
2C LK
1. tBDL : 1 CLK ; Last data in to burst stop delay.
Read or write burst stop command is valid at every burst length.
2. Number of valid output data after burst stop : 1,2 for CAS latency = 2,3 respectiviely.
3. Write burst is terminated. tRDL determinates the last data write.
4. DQM asserted to prevent corruption of locations D2 and D3.
5. Precharge can be issued here or earlier (satisfying tRAS min delay) with DQM.
6. PRE : All banks precharge, if necessary.
MRS can be issued only at all banks precharge state.
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Preliminary
M52S128168A
10. Clock Suspend Exit & Power Down Exit
1) Cl o ck S u sp en d (= Ac t ive P ow er Do wn ) Exi t
2)P ower Down (= Pr ec harg e Powe r Down )
CLK
CLK
CKE
Inter nal
CLK
Internal
CLK
*Note1
CMD
tSS
CKE
tSS
RD
*Note2
CMD
NOP AC T
11. Auto Refresh & Self Refresh
1) A u t o Re f r es h & S e lf R ef r e s h
*N ote3
CLK
*N ote4
CM D
* No t e 5
PRE
CM D
AR
CKE
t RP
2 ) S el f Re f r es h
t RF C
*N ote6
CLK
*N ote4
CM D
SR
PRE
CMD
CKE
tRP
tR F C
*Note : 1. Active power down : one or more banks active state.
2. Precharge power down : all banks precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after auto refresh command.
During tRFC from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, all banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh entry, refresh interval and refresh operation are performed internally.
After self refresh entry, self refresh mode is kept while CKE is low.
During self refresh entry, all inputs expect CKE will be don’t cared, and outputs will be in Hi-Z state.
For the time interval of tRFC from self refresh exit command, any other command can not be accepted.
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M52S128168A
12. About Burst Type Control
Sequential Counting
At MRS A3 = “0”. See the BURST SEQUENCE TABLE. (BL = 4,8)
BL = 1, 2, 4, 8 and full page.
Interleave Counting
At MRS A3 = “1”. See the BURST SEQUENCE TABLE. (BL = 4,8)
BL = 4, 8 At BL =1, 2 interleave Counting = Sequential Counting
Basic
MODE
Random
MODE
Random Column Access
tCCD = 1 CLK
Every cycle Read/Write Command with random column address can realize
Random Column Access.
That is similar to Extended Data Out (EDO) Operation of conventional DRAM.
13. About Burst Length Control
Basic
MODE
Random
MODE
Interrupt
MODE
1
At MRS A210 = “000”
At auto precharge . tRAS should not be violated.
2
At MRS A210 = “001”
At auto precharge . tRAS should not be violated.
4
At MRS A210 = “010”
8
At MRS A210 = “011”
Full Page
At MRS A210 = “111”
At the end of the burst length , burst is warp-around.
Burst Stop
tBDL = 1, Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.
Using burst stop command, any burst length control is possible.
RAS Interrupt
(Interrupted by
Precharge)
Before the end of burst. Row precharge command of the same bank stops read /write burst
with auto precharge.
tRDL = 2clk with DQM , Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.
During read/write burst with auto precharge, RAS interrupt can not be issued.
CAS Interrupt
Before the end of burst, new read/write stops read/write burst and starts new read/write
burst.
During read/write burst with auto precharge, CAS interrupt can not be issued.
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Preliminary
M52S128168A
FUNCTION TURTH TABLE (TABLE 1)
Current
State
IDLE
Row
Active
Read
Write
Read with
Auto
Precharge
Write with
Auto
Precharge
CS
RAS
CAS
WE
BA
ADDR
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
H
L
X
H
H
L
H
L
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
X
BA
BA
BA
X
OP code
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
X
X
X
X
CA, A10/AP
RA
A10/AP
X
OP code
X
X
X
CA, A10/AP
CA, A10/AP
RA
A10/AP
X
X
X
X
CA, A10/AP
CA, A10/AP
RA
A10/AP
X
X
X
X
CA, A10/AP
CA, A10/AP
RA
A10/AP
X
X
X
X
CA, A10/AP
RA, RA10
X
X
X
X
CA, A10/AP
RA, RA10
X
Elite Semiconductor Memory Technology Inc.
ACTION
NOP
NOP
ILLEGAL
ILLEGAL
Row (&Bank) Active ; Latch RA
NOP
Auto Refresh or Self Refresh
Mode Register Access
NOP
NOP
ILLEGAL
Begin Read ; latch CA ; determine AP
Begin Write ; latch CA ; determine AP
ILLEGAL
Precharge
ILLEGAL
NOP (Continue Burst to End Æ Row Active)
NOP (Continue Burst to End Æ Row Active)
Term burst Æ Row active
Term burst, New Read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, Precharge timing for Reads
ILLEGAL
NOP (Continue Burst to End Æ Row Active)
NOP (Continue Burst to End Æ Row Active)
Term burst Æ Row active
Term burst, New Read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, Precharge timing for Writes
ILLEGAL
NOP (Continue Burst to End Æ Row Active)
NOP (Continue Burst to End Æ Row Active)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Continue Burst to End Æ Row Active)
NOP (Continue Burst to End Æ Row Active)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Note
2
2
4
5
5
2
2
3
2
3
3
2
3
2
2
Publication Date: May. 2007
Revision: 1.0
27/47
ESMT
Current
State
Precharging
Row
Activating
Refreshing
Mode
Register
Accessing
Abbreviations :
Preliminary
CS
RAS
CAS
WE
BA
ADDR
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
H
L
L
L
L
X
H
H
H
L
L
L
X
H
H
H
L
L
L
X
H
H
L
L
X
H
H
H
L
X
H
H
L
H
H
L
X
H
H
L
H
H
L
X
H
L
H
L
X
H
H
L
X
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
X
X
X
X
X
X
X
X
X
X
X
X
X
CA
RA
A10/AP
X
X
X
X
CA
RA
A10/AP
X
X
X
X
X
X
X
X
X
X
X
RA = Row Address
NOP = No Operation Command
M52S128168A
ACTION
NOP Æ Idle after tRP
NOP Æ Idle after tRP
ILLEGAL
ILLEGAL
ILLEGAL
NOP Æ Idle after tRP
ILLEGAL
NOP Æ Row Active after tRCD
NOP Æ Row Active after tRCD
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP Æ Idle after tRFC
NOP Æ Idle after tRFC
ILLEGAL
ILLEGAL
ILLEGAL
NOP Æ Idle after 2clocks
NOP Æ Idle after 2clocks
ILLEGAL
ILLEGAL
ILLEGAL
BA = Bank Address
CA = Column Address
Note
2
2
2
4
2
2
2
2
AP = Auto Precharge
*Note : 1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.
2. Illegal to bank in specified state ; Function may be legal in the bank indicated by BA, depending on the state of the
bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharge or in idle state. May precharge bank indicated by BA (and A10/AP).
5. Illegal if any bank is not idle.
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
FUNCTION TRUTH TABLE (TABLE2)
Current
State
Self
Refresh
All
Banks
Precharge
Power
Down
All
Banks
Idle
Any State
other than
Listed
above
CKE
( n-1 )
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
L
H
H
L
L
CKE
n
X
H
H
H
H
H
L
X
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
L
H
L
H
L
CS
X
H
L
L
L
L
X
X
H
L
L
L
L
X
X
H
L
L
L
L
L
L
L
X
X
X
X
X
RAS CAS
X
X
H
H
H
L
X
X
X
H
H
H
L
X
X
X
H
H
H
L
L
L
L
X
X
X
X
X
X
X
H
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
L
H
H
L
L
X
X
X
X
X
WE
ADDR
X
X
H
L
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
H
H
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
RA
X
X
OP Code
X
X
X
X
X
ACTION
INVALID
Exit Self Refresh Æ Idle after tRFC (ABI)
Exit Self Refresh Æ Idle after tRFC (ABI)
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self Refresh)
INVALID
Exit Self Refresh Æ ABI
Exit Self Refresh Æ ABI
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Low Power Mode)
Refer to Table1
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
Row (& Bank) Active
NOP
Enter Self Refresh
Mode Register Access
NOP
Refer to Operations in Table 1
Begin Clock Suspend next cycle
Exit Clock Suspend next cycle
Maintain Clock Suspend
Note
6
6
7
7
8
8
8
9
9
Abbreviations : ABI = All Banks Idle, RA = Row Address
*Note : 6.CKE low to high transition is asynchronous.
7.CKE low to high transition is asynchronous if restart internal clock.
A minimum setup time 1CLK + tSS must be satisfy before any command other than exit.
8.Power down and self refresh can be entered only from the all banks idle state.
9.Must be a legal command.
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
29/47
ESMT
Preliminary
M52S128168A
Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency = 3,Burst Length = 1
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
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ESMT
Note :
Preliminary
M52S128168A
1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active @ read/write are controlled by BA0~BA1.
BA1
BA0
Active & Read/Write
0
0
Bank A
0
1
Bank B
1
0
Bank C
1
1
Bank D
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
A10/AP
0
1
BA1
BA0
Operating
0
0
Disable auto precharge, leave A bank active at end of burst.
0
1
Disable auto precharge, leave B bank active at end of burst.
1
0
Disable auto precharge, leave C bank active at end of burst.
1
1
Disable auto precharge, leave D bank active at end of burst.
0
0
Enable auto precharge , precharge bank A at end of burst.
0
1
Enable auto precharge , precharge bank B at end of burst.
1
0
Enable auto precharge , precharge bank C at end of burst.
1
1
Enable auto precharge , precharge bank D at end of burst.
4. A10/AP and BA0~BA1 control bank precharge when precharge is asserted.
A10/AP
BA1
BA0
Precharge
0
0
0
Bank A
0
0
1
Bank B
0
1
0
Bank C
0
1
1
Bank D
1
X
X
All Banks
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
Power Up Sequence
Power-Up and Initialization Sequence
The following sequence is required for POWER UP and Initialization.
1. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.)
Apply VDD before or at the same time as VDDQ
Apply VDDQ
2. Start clock and maintain stable condition for a minimum.
3. The minimum of 200us after stable power and clock (CLK,CLK),apply NOP & take CKE high.
4. Issue precharge commands for all banks of the device.
5. Issue 2 or more auto-refresh commands.
6. Issue mode register set command to initialize the mode register.
7. Issue extended mode register set command to set PASR and DS..
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
Read & Write Cycle at Same Bank @ Burst Length = 4
*Note :
1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is
available after Row precharge. Last valid output will be Hi-Z (tSHZ) after the clock.
3. Output will be Hi-Z after the end of burst. (1,2,4,8 & Full page bit burst)
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Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
Page Read & Write Cycle at Same Bank @ Burst Length = 4
Note : 1. To Write data before burst read ends. DQM should be asserted three cycle prior to write command to avoid
bus contention.
2. Row precharge will interrupt writing. Last data input , tRDL before row precharge , will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before
end of burst. Input data after Row precharge cycle will be masked internally.
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Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
Page Read Cycle at Different Bank @ Burst Length = 4
Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
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Publication Date: May. 2007
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ESMT
Preliminary
M52S128168A
Page Write Cycle at Different Bank @ Burst Length = 4
*Note : 1. To interrupt burst write by Row precharge , DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge , both the write and the precharge banks must be the same.
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Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
Read & Write Cycle at Different Bank @ Burst Length = 4
*Note : 1. tCDL should be met to complete write.
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Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
Read & Write cycle with Auto Precharge @ Burst Length = 4
*Note : 1. tCDL should be controlled to meet minimum tRAS before internal precharge start.
(In the case of Burst Length = 1 & 2)
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Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
Clock Suspension & DQM Operation Cycle @ CAS Letency = 2 , Burst Length = 4
*Note : 1. DQM is needed to prevent bus contention
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
M52S128168A
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
*Note : 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
2. Burst stop is valid at every burst length.
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Publication Date: May. 2007
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ESMT
Preliminary
M52S128168A
Write interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full page
*Note : 1. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by
AC parameter of tRDL.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input
data after Row precharge cycle will be masked internally.
2. Burst stop is valid at every burst length.
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ESMT
Preliminary
M52S128168A
Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4
*Note:
1. Both banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + tSS prior to Row active command.
3. Can not violate minimum refresh specification. (64ms)
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ESMT
Preliminary
M52S128168A
Self Refresh Entry & Exit Cycle
*Note : TO ENTER SELF REFRESH MODE
1. CS , RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays “Low”.
cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS starts from high.
6. Minimum tRFC is required after CKE going high to complete self refresh exit.
7. Burst auto refresh is required before self refresh entry and after self refresh exit if the
system uses burst refresh.
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
Mode Register Set Cycle
M52S128168A
Extended Mode Register Set Cycle
All banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
*Note : 1. CS , RAS , CAS , & WE activation at the same clock cycle with address key will set internal
mode register.
2. Minimum 2 clock cycles should be met before new RAS activation.
3. Please refer to Mode Register Set table.
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ESMT
Preliminary
M52S128168A
PACKING DIMENSIONS
54-LEAD TSOP(II) SDRAM (400mil) (1:3)
-H-
D
54
SEE
DETAIL A
A
A2
28
0.21 REF
0.665 REF
B
A1
E1
PIN1
IDENTIFIER
E
O
-CB
L
L1
1
DETAIL "A"
27
-C-
b
c c1
-C-
0.10
e
b
b1
SEATING PLANE
SECTION B-B
Symbol
A
A1
A2
b
b1
c
c1
D
E
E1
L
L1
e
Θ
Dimension in mm
Min Norm Max
1.20
0.05 0.10 0.15
0.95 1.00 1.05
0.25
0.45
0.25 0.35 0.40
0.12
0.21
0.10 0.127 0.16
22.22 BSC
11.76 BSC
10.16 BSC
0.40 0.50 0.60
0.80 REF
0.80 BSC
0°
10°
Elite Semiconductor Memory Technology Inc.
Dimension in inch
Min Norm Max
0.047
0.002 0.004 0.006
0.037 0.039 0.041
0.010
0.018
0.010 0.014 0.016
0.005
0.008
0.004 0.005 0.006
0.875 BSC
0.463 BSC
0.400 BSC
0.016 0.020 0.024
0.031 REF
0.031 BSC
0°
10°
Publication Date: May. 2007
Revision: 1.0
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ESMT
Preliminary
PACKING
DIMENSIONS
54-BALL
SDRAM ( 8x8 mm )
Symbol
Dimension in mm
Min
Norm
Max
A
1.00
A1
0.20
0.25
0.30
A2
0.61
0.66
0.71
Φb
0.30
0.35
0.40
D
7.90
8.00
8.10
E
7.90
8.00
8.10
D1
6.40
E1
6.40
e
0.80
Controlling dimension : Millimeter.
Elite Semiconductor Memory Technology Inc.
M52S128168A
Dimension in inch
Min
Norm
Max
0.039
0.008
0.010
0.012
0.024
0.026
0.028
0.012
0.014
0.016
0.311
0.315
0.319
0.311
0.315
0.319
0.252
0.252
0.031
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Revision: 1.0
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ESMT
Preliminary
M52S128168A
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form or by
any means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at the
time of publication. ESMT assumes no responsibility for any error in this
document, and reserves the right to change the products or specification in
this document without notice.
The information contained herein is presented only as a guide or examples
for the application of our products. No responsibility is assumed by ESMT for
any infringement of patents, copyrights, or other intellectual property rights of
third parties which may result from its use. No license, either express ,
implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To
minimize risks associated with customer's application, adequate design and
operating safeguards against injury, damage, or loss from such failure,
should be provided by the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as,
but not limited to, life support devices or system, where failure or abnormal
operation may directly affect human lives or cause physical injury or property
damage. If products described here are to be used for such kinds of
application, purchaser must do its own quality assurance testing appropriate
to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
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