ESMT M12S128324A-7TG

ESMT
M12S128324A
SDRAM
1M x 32 Bit x 4 Banks
Synchronous DRAM
FEATURES
y
y
y
y
y
y
y
y
JEDEC standard 2.5V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
- CAS Latency (1, 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
All inputs are sampled at the positive going edge of the
system clock
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
ORDERING INFORMATION
Product No.
MAX
FREQ.
M12S128324A-6TG
166MHz
86 TSOPII
Pb-free
M12S128324A-6BG
166MHz
90 FBGA
Pb-free
M12S128324A-7TG
143MHz
86 TSOPII
Pb-free
M12S128324A-7BG
143MHz
90 FBGA
Pb-free
PACKAGE COMMENTS
GENERAL DESCRIPTION
The M12S128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
1/46
ESMT
M12S128324A
PIN ARRANGEMENT
Top View
V DD
DQ0
VD
DQ
DQ1
DQ2
VSSQ
DQ3
DQ4
V D DQ
DQ5
DQ6
VSSQ
DQ7
NC
V
DD
D Q M0
WE
C AS
R AS
CS
A 11
BA0
BA1
A1 0/AP
A0
A1
A2
D Q M2
VD D
NC
D Q 16
V S SQ
D Q 17
D Q 18
VDDQ
D Q 19
D Q 20
V S SQ
D Q 21
D Q 22
VD DQ
D Q 23
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
VS
S
D Q 15
V S SQ
D Q 14
D Q 13
VD DQ
D Q 12
D Q 11
V S SQ
D Q 10
DQ9
VD DQ
DQ8
NC
VS
S
DQM 1
NC
NC
C LK
C KE
A9
A8
A7
A6
A5
A4
A3
DQM 3
VS
S
NC
DQ3 1
VD DQ
DQ3 0
DQ2 9
V S SQ
DQ2 8
DQ2 7
VD DQ
DQ2 6
DQ2 5
V S SQ
DQ2 4
VS S
86Pi n T SO P( II)
( 4 0 0 m il x 8 7 5 m i l)
( 0 . 5 m m P in p i t c h )
90 Ball FBGA
1
2
3
4
5
6
7
8
9
A
DQ26 DQ24 VSS
VDD DQ23 DQ21
B
DQ28 VDDQ VSSQ
VDDQ VSSQ DQ19
C
VSSQ DQ27 DQ25
DQ22 DQ20 VDDQ
D
VSSQ DQ29 DQ30
DQ17 DQ18 VDDQ
E
VDDQ DQ31
NC
NC
DQ16 VSSQ
F
VSS DQM3
A3
A2
DQM2 VDD
G
A4
A5
A6
A10
A0
A1
H
A7
A8
NC
NC
BA1
A11
J
CLK
CKE
A9
BA0
CS
RAS
K
DQM1
NC
NC
CAS
WE
DQM0
L
VDDQ DQ8
VSS
VDD
DQ7 VSSQ
M
VSSQ DQ10 DQ9
DQ6
DQ5 VDDQ
N
VSSQ DQ12 DQ14
DQ1
DQ3 VDDQ
P
DQ11 VDDQ VSSQ
R
DQ13 DQ15 VSS
Elite Semiconductor Memory Technology Inc.
VDDQ VSSQ DQ4
VDD
DQ0
DQ2
Publication Date: Mar. 2009
Revision: 1.4
2/46
ESMT
M12S128324A
BLOCK DIAGRAM
CKE
Clock
Generator
Bank D
Bank C
Bank B
Address
Mode
Register
Row
Address
Buffer
&
Refresh
Counter
Row Decoder
CLK
Bank A
CAS
WE
DQM0~3
Column Decoder
Data Control Circuit
Input & Output
Buffer
RAS
Column
Address
Buffer
&
Refresh
Counter
Latch Circuit
CS
Control Logic
Command Decoder
Sense Amplifier
DQ
PIN DESCRIPTION
PIN
NAME
INPUT FUNCTION
CLK
System Clock
Active on the positive going edge to sample all inputs
CS
Chip Select
Disables or enables device operation by masking or enabling all
inputs except CLK , CKE and DQM0-3.
CKE
Clock Enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior new command.
Disable input buffers for power down in standby.
A0 ~ A11
Address
Row / column address are multiplexed on the same pins.
Row address : RA0~RA11, column address : CA0~CA7
BA0 , BA1
Bank Select Address
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with
CAS
Column Address Strobe
WE
Write Enable
RAS low.
Enables row access & precharge.
Latches column address on the positive going edge of the CLK with
Elite Semiconductor Memory Technology Inc.
CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS , WE active.
Publication Date: Mar. 2009
Revision: 1.4
3/46
ESMT
M12S128324A
PIN
NAME
INPUT FUNCTION
DQM0~3
Data Input / Output Mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active.
DQ0 ~ DQ31
Data Input / Output
Data inputs / outputs are multiplexed on the same pins.
VDD / VSS
Power Supply / Ground
Power and ground for the input buffers and the core logic.
VDDQ / VSSQ
Data Output Power / Ground
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
N.C
No Connection
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 3.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Storage temperature
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C )
Parameter
Supply voltage
Input logic high voltage
Symbol
VDD, VDDQ
(for -6)
VDD, VDDQ
VIH
Min
Typ
Max
Unit
Note
2.375
2.5
2.625
V
1
2.3
2.5
2.7
V
1
0.8xVDDQ
2.5
VDDQ+0.3
V
2
Input logic low voltage
VIL
-0.3
0
0.3
V
3
Output logic high voltage
VOH
VDDQ -0.2
-
-
V
IOH = -0.1mA
Output logic low voltage
VOL
-
-
0.2
V
IOL = 0.1mA
ILI
-2
-
2
μA
4
Input leakage current
Note:
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VIH(max) = 3.0V AC. The overshoot voltage duration is ≤ 3ns.
3. VIL(min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.
4. Any input 0V ≤ VIN ≤ VDDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled , 0V ≤ VOUT ≤ VDDQ.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
4/46
ESMT
M12S128324A
CAPACITANCE (VDD = 2.5V, TA = 25 °C , f = 1MHZ)
Parameter
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance
(CLK, CKE, CS , RAS , CAS , WE & DQM)
Data input/output capacitance (DQ0 ~ DQ31)
Symbol
Min
Max
Unit
CIN1
2
4
pF
CIN2
2
4
pF
COUT
2
5
pF
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = 0 to 70 °C
Parameter
Operating Current
(One Bank Active)
Test Condition
Symbol
Version
-6
-7
110
90
Unit
Note
mA
1,2
Burst Length = 1
ICC1
tRC ≥ tRC(min)
IOL = 0 mA
ICC2P
CKE ≤ VIL(max), tcc = 10ns
0.8
ICC2PS
CKE & CLK ≤ VIL(max), tcc = ∞
0.6
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
25
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
input signals are stable
7
Active Standby Current
in power-down mode
ICC3P
CKE ≤ VIL(max), tcc = 10ns
3
ICC3PS
CKE & CLK ≤ VIL(max), tcc = ∞
3
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 15ns
Input signals are changed one time during 2clks
30
mA
10
mA
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
mA
mA
All other pins ≥ VDD-0.2V or ≤ 0.2V
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
input signals are stable
IOL = 0 mA
Page Burst
2 Banks activated
tCK = tCK(min)
180
160
mA
ICC5
tRC ≥ tRC(min)
180
160
mA
ICC6
CKE ≤ 0.2V
Operating Current
(Burst Mode)
ICC4
Refresh Current
Self Refresh Current
Note :
mA
2
1,2
mA
1. Measured with outputs open. Addresses are changed only one time during tCC(min).
2. Refresh period is 64ms. A maximum of eight consecutive AUTO REFRESH commands (with tRFCmin) can be posed to
any given SDRAM, and the maximum absolute internal between any AUTO REFRSH command and the next AUTO
REFRESH command is 8x15.6μm. Addresses are changed only one time during tCC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
5/46
ESMT
M12S128324A
AC OPERATING TEST CONDITIONS [VDD = 2.5V ± 0.2V, VDD = 2.375V~2.625V (for -6), TA = 0 to 70 °C ]
Parameter
Value
Unit
0.9XVDDQ / 0.2
V
Input timing measurement reference level
0.5xVDDQ
V
Input rise and fall-time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5xVDDQ
V
Output load condition
See Fig. 2
Input levels (Vih/Vil)
(Fig. 1) DC Output Load Circuit
(Fig. 2) AC Output Load Circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Version
Parameter
Symbol
-6
-7
12
14
18
18
Unit
Note
ns
1
ns
1
Row active to row active delay
tRRD(min)
RAS to CAS delay
tRCD(min)
Row precharge time
tRP(min)
18
20
ns
1
tRAS(min)
42
42
ns
1
Row active time
tRAS(max)
Row cycle time
100
us
@ Operating
tRC(min)
60
70
@ Auto Refresh
tRFC(min)
75
84
ns
1
Last data in to col. address delay
tCDL(min)
1
CLK
2
Last data in to row precharge
tRDL(min)
2
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
6/46
ESMT
M12S128324A
Version
Parameter
Symbol
-6
Col. address to col. address delay
Number of valid
Output data
Unit
Note
CLK
3
ea
4
-7
tCCD(min)
1
CAS latency = 3
2
CAS latency = 2
1
CAS latency = 1
0
Note : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then
rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
AC CHARACTERISTICS (AC operating condition unless otherwise noted)
-6
Parameter
Min
CAS latency = 3
CLK cycle time
CAS latency = 2
tCC
8
CAS latency = 2
tSAC
CAS latency = 1
CAS latency = 3
Output data
hold time
CAS latency = 2
tOH
CAS latency = 1
Min
Unit
Note
ns
1
ns
1,2
ns
2
Max
7
1000
20
CAS latency = 3
output delay
Max
6
CAS latency = 1
CLK to valid
-7
Symbol
8.6
1000
20
5.8
6
7
7
17
18
2
2
2
2
2
2
CLK high pulsh width
tCH
2
2.5
ns
3
CLK low pulsh width
tCL
2
2.5
ns
3
Input setup time
tSS
2
2
ns
3
Input hold time
tSH
1
1
ns
3
CLK to output in Low-Z
tSLZ
1
1
ns
2
ns
-
CAS latency = 3
CLK to output
in Hi-Z
CAS latency = 2
tSHZ
CAS latency = 1
Note :
5.8
6
7
7
17
18
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.
3. Assumed input rise and fall time (tr & tf) =1ns.
If tr & tf is longer than 1ns. transient time compensation should be considered.
i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
7/46
ESMT
M12S128324A
SIMPLIFIED TRUTH TABLE
COMMAND
Register
CKEn-1
CKEn
H
X
Mode Register set
Auto Refresh
Refresh
Self
Refresh
Entry
Bank Active & Row Addr.
Write &
Column Address
WE
DQM BA0,1 A10/AP A11,A9~A0 Note
L
L
L
L
X
OP CODE
L
L
L
H
X
X
L
H
H
H
X
H
3
L
L
H
H
H
3
H
X
X
X
X
X
L
L
H
H
X
V
X
L
H
L
H
X
V
Auto Precharge Enable
H
Auto Precharge Disable
L
X
L
H
L
L
X
V
Auto Precharge Enable
Burst Stop
H
H
X
L
H
H
L
X
H
X
L
L
H
L
X
Bank Selection
Precharge
All Banks
Entry
H
Exit
L
H
Entry
H
L
Precharge Power Down Mode
Exit
DQM
L
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
L
X
H
H
Column
Address
(A0~A7)
Column
Address
(A0~A7)
X
V
L
X
H
4
4,5
X
X
X
X
X
X
H
X
X
X
L
H
H
H
X
V
X
X
X
1.OP Code : Operating Code
A0~A11 & BA0~BA1 : Program keys. (@ MRS)
2.MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3.Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge of command is meant by “Auto”.
Auto/self refresh can be issued only at all banks idle state.
4.BA0~BA1 : Bank select addresses.
If both BA1 and BA0 are “Low” at read ,write , row active and precharge ,bank A is selected.
If both BA1 is “Low” and BA0 is “High” at read ,write , row active and precharge ,bank B is selected.
If both BA1 is “High” and BA0 is “Low” at read ,write , row active and precharge ,bank C is selected.
If both BA1 and BA0 are “High” at read ,write , row active and precharge ,bank D is selected
If A10/AP is “High” at row precharge , BA1 and BA0 is ignored and all banks are selected.
5.During burst read or write with auto precharge. new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6.Burst stop command is valid at every burst length.
7.DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (write DQM latency is 0), but
makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)
Elite Semiconductor Memory Technology Inc.
4,5
6
(V = Valid , X = Don’t Care. H = Logic High , L = Logic Low )
Note :
4
X
H
No Operating Command
3
Row Address
L
H
3
X
Auto Precharge Disable
Clock Suspend or
Active Power Down
1,2
H
Exit
Read &
Column Address
CS RAS CAS
Publication Date: Mar. 2009
Revision: 1.4
8/46
7
ESMT
M12S128324A
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address
BA0~BA1
A11
A10/AP
A9
Function
RFU
RFU
RFU
W.B.L
Test Mode
CAS Latency
A8
A7
TM
A6
A5
A4
CAS Latency
Burst Type
A3
A2
BT
A1
Burst Length
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT = 0
BT = 1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
1
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
0
1
0
4
4
1
1
Reserved
0
1
1
3
0
1
1
8
8
1
0
0
Reserved
1
0
0
Reserved Reserved
Write Burst Length
A9
Length
1
0
1
Reserved
1
0
1
Reserved Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
Full Page Reserved
Full Page Length : 256
Note :
1. RFU(Reserved for future use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “ Burst Read single Bit Write” function will be enabled.
3. The full column burst (256 bit) is available only at sequential mode of burst type.
Elite Semiconductor Memory Technology Inc.
A0
Publication Date: Mar. 2009
Revision: 1.4
9/46
ESMT
M12S128324A
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
Sequential
Interleave
A1
A0
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial
Sequential
Interleave
A2
A1
A0
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
10/46
ESMT
M12S128324A
DEVICE OPERATIONS
CLOCK (CLK)
POWER-UP
The clock input is used as the reference for all SDRAM
operations.All operations are synchronized to the positive
going edge of the clock. The clock transitions must be
monotonic between VIL and VIH. During operation with CKE
high all inputs are assumed to be in valid state (low or high) for
the duration of setup and hold time around positive edge of the
clock for proper functionality and Icc specifications.
1.Apply power and start clock, Attempt to maintain CKE =
“H”, DQM = “H” and the other pins are NOP condition at
the inputs.
2.Maintain stable power, stable clock and NOP input
condition for minimum of 200us.
3.Issue precharge commands for all banks of the devices.
4.Issue 2 or more auto-refresh commands.
5.Issue a mode register set command to initialize the
mode register.
cf.) Sequence of 4 & 5 is regardless of the order.
CLOCK ENABLE(CKE)
The clock enable (CKE) gates the clock onto SDRAM. If CKE
goes low synchronously with clock (set-up and hold time same
as other inputs), the internal clock suspended from the next
clock cycle and the state of output and burst address is frozen
as long as the CKE remains low. All other inputs are ignored
from the next clock cycle after CKE goes low. When all banks
are in the idle state and CKE goes low synchronously with
clock, the SDRAM enters the power down mode from the next
clock cycle. The SDRAM remains in the power down mode
ignoring the other inputs as long as CKE remains low. The
power down exit is synchronous as the internal clock is
suspended. When CKE goes high at least “1CLK + tSS” before
the high going edge of the clock, then the SDRAM becomes
active from the same clock edge accepting all the input
commands.
The device is now ready for normal operation.
MODE REGISTER SET (MRS)
The mode register stores the data for controlling the
various operating modes of SDRAM. It programs the
CAS latency, burst type, burst length, test mode and
various vendor specific options to make SDRAM useful
for variety of different applications. The default value of
the mode register is not defined, therefore the mode
register must be written after power up to operate the
SDRAM. The mode register is written by asserting low
on CS , RAS , CAS and WE (The SDRAM should
be in active mode with CKE already high prior to writing
the mode register). The state of address pins A0~A11
BANK ADDRESSES (BA0~BA1)
and BA0~BA1 in the same cycle as CS , RAS , CAS
This SDRAM is organized as four independent banks of
524,288 words x 32 bits memory arrays. The BA0~BA1 inputs
and WE going low is the data written in the mode
register. Two clock cycles is required to complete the
write in the mode register. The mode register contents
can be changed using the same command and clock
cycle requirements during operation as long as all
banks are in the idle state. The mode register is divided
into various fields into depending on functionality. The
burst length field uses A0~A2, burst type uses A3, CAS
latency (read latency from column address) use A4~A6,
vendor specific options or test mode use A7~A8,
A10/AP~A11 and BA0~BA1. The write burst length is
programmed using A9. A7~A9, A10/AP~A11 and
BA0~BA1 must be set to low for normal SDRAM
operation. Refer to the table for specific codes for
various burst length, burst type and CAS latencies.
are latched at the time of assertion of RAS and CAS to
select the bank to be used for the operation. The banks
addressed BA0~BA1 are latched at bank active, read, write,
mode register set and precharge operations.
ADDRESS INPUTS (A0~A11)
The 20 address bits are required to decode the 524,288 word
locations are multiplexed into 12 address input pins (A0~A11).
The 12 row addresses are latched along with RAS and
BA0~BA1 during bank active command. The 8 bit column
addresses are latched along with CAS , WE and BA0~BA1
during read or with command.
The bank activate command is used to select a random
NOP and DEVICE DESELECT
row in an idle bank. By asserting low on
When RAS , CAS and WE are high , The SDRAM
performs no operation (NOP). NOP does not initiate any new
operation, but is needed to complete operations which require
more than single clock cycle like bank activate, burst read,
auto refresh, etc. The device deselect is also a NOP and is
entered by asserting
CS
high.
BANK ACTIVATE
CS
high disables the
command decoder so that RAS , CAS , WE and all the
address inputs are ignored.
Elite Semiconductor Memory Technology Inc.
RAS and
CS with desired row and bank address, a row access
is initiated. The read or write operation can occur after a
time delay of tRCD (min) from the time of bank activation.
tRCD is the internal timing parameter of SDRAM,
therefore it is dependent on operating clock frequency.
The minimum number of clock cycles required between
bank activate and read or write command should be
calculated by dividing tRCD (min) with cycle time of the
clock and then rounding of the result to the next higher
integer.
Publication Date: Mar. 2009
Revision: 1.4
11/46
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M12S128324A
DEVICE OPERATIONS (Continued)
DQM OPERATION
The SDRAM has four internal banks in the same chip and
shares part of the internal circuitry to reduce chip area,
therefore it restricts the activation of four banks
simultaneously. Also the noise generated during sensing of
each bank of SDRAM is high requiring some time for power
supplies to recover before another bank can be sensed
reliably. tRRD (min) specifies the minimum time required between
activating different bank. The number of clock cycles required
between different bank activation must be calculated similar to
tRCD (min) specification. The minimum time required for the bank
to be active to initiate sensing and restoring the complete row
of dynamic cells is determined by tRAS (min). Every SDRAM bank
activate command must satisfy tRAS (min) specification before a
precharge command to that active bank can be asserted. The
maximum time any bank can be in the active state is
determined by tRAS (max) and tRAS (max) can be calculated
similar to tRCD specification.
works similar to OE during operation and inhibits writing
during write operation. The read latency is two cycles from
DQM and zero cycle for write, which means DQM masking
occurs two cycles later in read cycle and occurs in the
same cycle during write cycle. DQM operation is
synchronous with the clock. The DQM signal is important
during burst interrupts of write with read or precharge in
the SDRAM. Due to asynchronous nature of the internal
write, the DQM operation is critical to avoid unwanted or
incomplete writes when the complete burst write is
required. Please refer to DQM timing diagram also.
BURST READ
The precharge is performed on an active bank by
asserting low on clock cycles required between bank
activate and clock cycles required between bank activate
The burst read command is used to access burst of data on
consecutive clock cycles from an active row in an active bank.
The burst read command is issued by asserting low on CS
and RAS with WE being high on the positive edge of the
clock. The bank must be active for at least tRCD (min) before the
burst read command is issued. The first output appears in CAS
latency number of clock cycles after the issue of burst read
command. The burst length, burst sequence and latency from
the burst read command is determined by the mode register
which is already programmed. The burst read can be initiated
on any column address of the active row. The address wraps
around if the initial address does not start from a boundary
such that number of outputs from each I/O are equal to the
burst length programmed in the mode register. The output
goes into high-impedance at the end of burst, unless a new
burst read was initiated to keep the data output gapless. The
burst read can be terminated by issuing another burst read or
burst write in the same bank or the other active bank or a
precharge command to the same bank. The burst stop
command is valid at every page burst length.
BURST WRITE
The burst write command is similar to burst read command
and is used to write data into the SDRAM on consecutive clock
cycles in adjacent addresses depending on burst length and
burst sequence. By asserting low on CS , CAS and WE
with valid column address, a write burst is initiated. The data
inputs are provided for the initial address in the same clock
cycle as the burst write command. The input buffer is
deselected at the end of the burst length, even though the
internal writing can be completed yet. The writing can be
complete by issuing a burst read and DQM for blocking data
inputs or burst write in the same or another active bank. The
burst stop command is valid at every burst length. The write
burst can also be terminated by using DQM for blocking data
and procreating the bank tRDL after the last data input to be
written into the active row. See DQM OPERATION also.
Elite Semiconductor Memory Technology Inc.
The DQM is used mask input and output operations. It
PRECHARGE
and CS , RAS , WE and A10/AP with valid BA0~BA1
of the bank to be procharged. The precharge command
can be asserted anytime after tRAS (min) is satisfy from the
bank active command in the desired bank. tRP is defined
as the minimum number of clock cycles required to
complete row precharge is calculated by dividing tRP with
clock cycle time and rounding up to the next higher
integer. Care should be taken to make sure that burst
write is completed or DQM is used to inhibit writing before
precharge command is asserted. The maximum time any
bank can be active is specified by tRAS (max). Therefore,
each bank activate command. At the end of precharge,
the bank enters the idle state and is ready to be activated
again. Entry to power-down, Auto refresh, Self refresh and
Mode register set etc. is possible only when all banks are
in idle state.
AUTO PRECHARGE
The precharge operation can also be performed by using
auto precharge. The SDRAM internally generates the
timing to satisfy tRAS (min) and “tRP” for the programmed
burst length and CAS latency. The auto precharge
command is issued at the same time as burst write by
asserting high on A10/AP, the bank is precharge command
is asserted. Once auto precharge command is given, no
new commands are possible to that particular bank until
the bank achieves idle state.
ALL BANKS PRECHARGE
Four banks can be precharged at the same time by using
Precharge all command. Asserting low on CS , RAS ,
and WE with high on A10/AP after all banks have
satisfied tRAS (min) requirement, performs precharge on all
banks. At the end of tRP after performing precharge all, all
banks are in idle state.
Publication Date: Mar. 2009
Revision: 1.4
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M12S128324A
DEVICE OPERATIONS (Continued)
AUTO REFRESH
SELF REFRESH
The storage cells of SDRAM need to be refreshed every 64ms
to maintain data. An auto refresh cycle accomplishes refresh of
a single row of storage cells. The internal counter increments
automatically on every auto refresh cycle to refresh all the
rows. An auto refresh command is issued by asserting low on
The self refresh is another refresh mode available in the
SDRAM. The self refresh is the preferred refresh mode for
data retention and low power operation of SDRAM. In self
refresh mode, the SDRAM disables the internal clock and
all the input buffers except CKE. The refresh addressing
and timing is internally generated to reduce power
consumption.
The self refresh mode is entered from all banks idle state
CS , RAS and CAS with high on CKE and WE . The auto
refresh command can only be asserted with all banks being in
idle state and the device is not in power down mode (CKE is
high in the previous cycle). The time required to complete the
auto refresh operation is specified by tRC (min). The minimum
number of clock cycles required can be calculated by driving
tRC with clock cycle time and them rounding up to the next
higher integer. The auto refresh command must be followed by
NOP’s until the auto refresh operation is completed. The auto
refresh is the preferred refresh mode when the SDRAM is
being used for normal data transactions. The auto refresh
cycle can be performed once in 15.6us or the burst of 4096
auto refresh cycles in 40ms.
Elite Semiconductor Memory Technology Inc.
by asserting low on CS , RAS , CAS and CKE with
high on WE . Once the self refresh mode is entered, only
CKE state being low matters, all the other inputs including
clock are ignored to remain in the refresh.
The self refresh is exited by restarting the external clock
and then asserting high on CKE. This must be followed by
NOP’s for a minimum time of tRC before the SDRAM
reaches idle state to begin normal operation. 4K cycles of
burst auto refresh is required immediately before self
refresh entry and immediately after self refresh exit.
Publication Date: Mar. 2009
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M12S128324A
COMMANDS
CLK
Mode register set command
CKE
( CS , RAS , CAS , WE = Low)
The device has a mode register that defines how the device operates. In this
command, A0 through A11 and BA0~BA1 are the data input pins. After power on, the
mode register set command must be executed to initialize the device.
The mode register can be set only when all banks are in idle state.
During 2CLK following this command, the device cannot accept any other
commands.
H
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
A10
Add
Fig. 1 Mode register set
command
Activate command
( CS , RAS = Low, CAS , WE = High)
The device has four banks, each with 2,048 rows.
This command activates the bank selected by BA1 and BA0 and a row address
selected by A0 through A11.
This command corresponds to a conventional DRAM’s RAS falling.
CLK
CKE
H
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
Row
A10
Add
Row
Fig. 2 Row address stroble and
bank active command
Precharge command
( CS , RAS , WE = Low, CAS = High )
This command begins precharge operation of the bank selected by BA1 and BA0.
When A10 is High, all banks are precharged, regardless of BA1 and BA0. When A10
is Low, only the bank selected by BA1 and BA0 is precharged.
After this command, the device can’t accept the activate command to the
precharging bank during tRP (precharge to activate command period).
This command corresponds to a conventional DRAM’s RAS rising.
CLK
CKE
H
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
A10
(Precharge select)
Add
Fig. 3 Precharge command
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Write command
CLK
( CS , CAS , WE = Low, RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
CKE
H
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
A10
Add
Col.
Fig. 4 Column address and
write command
Read command
( CS , CAS = Low, RAS , WE = High)
Read data is available after CAS latency requirements have been met.
This command sets the burst start address given by the column address.
CLK
CKE
H
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
A10
Add
Col.
Fig. 5 Column address and
read command
CLK
CBR (auto) refresh command
CKE
( CS , RAS , CAS = Low, WE , CKE = High)
This command is a request to begin the CBR refresh operation. The refresh
address is generated internally.
Before executing CBR refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a
row activate command.
During tRC period (from refresh command to refresh or activate command), the
device cannot accept any other command.
H
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
A10
Add
Fig. 6 Auto refresh command
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M12S128324A
Self refresh entry command
CLK
( CS , RAS , CAS , CKE = Low , WE = High)
After the command execution, self refresh operation continues while CKE
remains low. When CKE goes to high, the device exits the self refresh mode.
During self refresh mode, refresh interval and refresh operation are performed
internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
CKE
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
A10
Add
Fig. 7 Self refresh entry
command
Burst stop command
( CS , WE = Low, RAS , CAS = High)
This command terminates the current burst operation.
Burst stop is valid at every burst length.
CLK
CKE
H
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
A10
Add
Fig. 8 Burst stop command
CLK
No operation
( CS = Low , RAS , CAS , WE = High)
This command is not a execution command. No operations begin or terminate by
this command.
CKE
H
CS
RAS
CAS
WE
BA0, BA1
(Bank select)
A10
Add
Fig. 9 No operation
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M12S128324A
BASIC FEATURE AND FUNCTION DESCRIPTIONS
1. CLOCK Suspend
1) Cl oc k Su spe nd ed Du r in g W rite ( BL=4)
2) Clock Suspended During Read (BL=4)
CLK
CMD
WR
RD
CKE
Mask ed by C K E
Internal
CLK
DQ( CL 2)
D0
D1
D2
D3
DQ( CL3)
D0
D1
D2
D3
Q0
Q2
Q1
Q0
Q3
Not W r itten
Q3
Q2
Q1
Su s pen ded Dou t
2. DQM Operation
2) Read Mas k (B L=4)
1)W rite Mask (BL=4)
CLK
CMD
WR
RD
DQM
Ma s k e d b y D Q M
Ma s k e d b y D Q M
DQ(CL2)
D0
D1
D3
DQ(CL3)
D0
D1
D3
Q0
Hi-Z
Q2
Q3
Q1
Q2
Hi-Z
DQ M t o D at a- i n M a sk = 0
Q3
DQ M t o D at a- ou t Ma sk = 2
*Note2
3)DQM with clcok su sp end ed (F ull Page Read )
CLK
CMD
RD
CKE
Inter nal
CLK
DQM
Hi- Z
DQ(CL2)
DQ(CL3)
Q0
Hi-Z
Q2
Hi-Z
Q1
Hi-Z
Q4
Hi-Z
Hi-Z
Q3
Q6
Q7
Q8
Q5
Q6
Q7
*Note : 1. CKE to CLK disable/enable = 1CLK.
2. DQM masks data out Hi-Z after 2CLKs which should masked by CKE ”L”.
3. DQM masks both data-in and data-out.
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3. CAS Interrupt (I)
*Note1
1)Read int er ru pt ed by Read ( BL=4)
CLK
CMD
RD
RD
ADD
A
B
DQ( CL2)
QA0
DQ(CL3)
QB0
QB1
QB2
QB3
QA0
QB0
QB1
QB2
QB3
t
CCD
*Not e 2
2) W r it e in t err u p t ed b y W r it e (B L= 2)
3) Wr ite in terr u pt ed by Read ( BL= 2)
CLK
CMD
WR
tCCD
ADD
DQ
WR
WR
tCCD
*Note 2
A
B
DA0
DB0
A
DB1
t
CDL
*Note 3
DQ( CL2)
DA0
DQ( CL3)
DA0
RD
*Note 2
B
DQ0
DQ1
DQ0
DQ1
t
CDL
*Not e 3
*Note : 1. By “interrupt” is meant to stop burst read/write by external before the end of burst.
By ” CAS interrupt ”, to stop burst read/write by CAS access ; read and write.
2. tCCD : CAS to CAS delay. (=1CLK)
3. tCDL : Last data in to new column address delay. (=1CLK)
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4. CAS Interrupt (II) : Read Interrupted by Write & DQM
( a) CL =2 , B L= 4
CLK
i)CMD
RD
WR
DQM
DQ
D0
RD
ii)CMD
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
WR
DQM
Hi-Z
DQ
iii)CMD
D0
RD
WR
DQM
Hi-Z
DQ
iv)CMD
D0
WR
RD
DQM
DQ
Q0
HHi -i -ZZ
D0
D3
*Note1
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(b) CL =3 ,B L= 4
CLK
RD
i)CMD
WR
DQM
DQ
D0
ii)CMD
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
WR
RD
DQM
DQ
D0
iii)CMD
WR
RD
DQM
D0
DQ
iv)CMD
WR
RD
DQM
Hi-Z
DQ
D0
v)CM D
RD
WR
DQM
Hi-Z
DQ
Q0
D0
D3
*Note1
*Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
5. Write Interrupted by Precharge & DQM
1)Normal W rit e (B L=4)
CLK
*Note3
CMD
WR
PRE
*Note2
DQM
DQ
D0
D1
D2
D3
tRDL(min)
Ma s k e d b y D Q M
*Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt
but only another bank precharge of four banks operation.
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6. Precharge
2) Normal Read (B L= 4)
1) Nor mal W rit e (B L=4)
CLK
CLK
CMD
PRE
WR
PRE CL= 2
RD
1*Note2
DQ
D0
D1
D2
DQ(CL2)
D3
tRDL
Q0
Q1
CMD
*Note1
Q2
Q3
PRE CL= 3
2*Note2
DQ( CL 3)
Q0
Q2
Q1
Q3
.
7. Auto Precharge
1)Normal W rit e (BL=4)
2) No rm al Read (B L= 4 )
CLK
CLK
CMD
CMD
DQ
WR
D0
D1
D2
D3
DQ(CL2)
RD
Q0
Q1
Q2
Q3
Q0
Q1
Q2
tRDL
DQ( CL 3)
Q3
*Note3
Au t o Pr ech ar ge st ar t s
*Note3
Auto Pr ech arge st art s
*Note : 1. tRDL : Last data in to row precharge delay.
2. Number of valid output data after row precharge : 1,2 for CAS Latency = 2,3 respectively.
3. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
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8. Burst Stop & Interrupted by Precharge
1)W rite Burst Stop
(BL=8)
1) W r it e in t er ru p t ed
CLK
CM D
by p rech arg e (BL=4)
CLK
W R
CM D
STOP
W R
PRE
tRDL
*Note 1
DQM
DQ
DQM
D0
D1
D3
D2
D4
Burst Stop
(BL=4)
D0
D1
D2
Mask
2)R ead interrup ted b y p recharg e (BL=4)
CLK
CM D
DQ
*Note2
tB DL
2)Read
D5
CLK
CM D
STO P
RD
RD
PRE
*Note3
*Note3
DQ(CL2)
Q0
DQ(CL3)
Q1
Q0
DQ(CL3)
Q1
Q0
DQ(CL2)
Q1
Q0
Q1
9. MRS
1) Mo d e Re g i s t e r S e t
CLK
*Note4
CMD
PRE
ACT
MRS
tRP
2CLK
*Note: 1. tRDL : 2 CLK; Last data in to Row Precharge.
2. tBDL : 1 CLK ; Last data in to burst stop delay.
3. Number of valid output data after burst stop : 1,2 for CAS latency = 2,3 respectiviely.
4. PRE : All banks precharge, if necessary.
MRS can be issued only at all banks precharge state.
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10. Clock Suspend Exit & Power Down Exit
1) Cl o ck S u sp en d (= Ac t ive P ow er Do wn ) Exi t
2)P ower Down (= Pr ec ha rg e Power Down )
CLK
CLK
CKE
CKE
tSS
tSS
Inter nal
CLK
Internal
CLK
*Note1
CMD
*Note2
CMD
RD
NOP AC T
11. Auto Refresh & Self Refresh
1)Auto Refresh &
Self Refresh
*Note3
CLK
*Note4
CM D
*Note5
PRE
CM D
AR
CKE
tRP
2)Self R efresh
tRC
*Note8
CLK
*Note4
CM D
PRE
SR
CM D
CKE
tRP
tRC
*Note : 1. Active power down : one or more banks active state.
2. Precharge power down : all banks precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after auto refresh command.
During tRC from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, all banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh entry, refresh interval and refresh operation are performed internally.
After self refresh entry, self refresh mode is kept while CKE is low.
During self refresh entry, all inputs expect CKE will be don’t cared, and outputs will be in Hi-Z state.
For the time interval of tRC from self refresh exit command, any other command can not be accepted.
4K cycles of burst auto refresh is required immediately before self refresh entry and immediately after self refresh exit.
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12. About Burst Type Control
Sequential Counting
At MRS A3 = “0”. See the BURST SEQUENCE TABLE. (BL = 4,8)
BL = 1, 2, 4, 8 and full page.
Interleave Counting
At MRS A3 = “1”. See the BURST SEQUENCE TABLE. (BL = 4,8)
BL = 4, 8 At BL =1, 2 interleave Counting = Sequential Counting
Basic
MODE
Random Random Column Access
MODE
tCCD = 1 CLK
Every cycle Read/Write Command with random column address can realize Random
Column Access.
That is similar to Extended Data Out (EDO) Operation of conventional DRAM.
13. About Burst Length Control
Basic
MODE
Random
MODE
Interrupt
MODE
1
At MRS A210 = “000”
At auto precharge . tRAS should not be violated.
2
At MRS A210 = “001”
At auto precharge . tRAS should not be violated.
4
At MRS A210 = “010”
8
At MRS A210 = “011”
Full Page
At MRS A210 = “111”
At the end of the burst length , burst is warp-around.
Burst Stop
tBDL = 1, Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.
Using burst stop command, any burst length control is possible.
RAS Interrupt
(Interrupted by
Precharge)
CAS Interrupt
Before the end of burst. Row precharge command of the same bank stops read /write burst
with auto precharge.
tRDL = 1 with DQM , Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.
During read/write burst with auto precharge, RAS interrupt can not be issued.
Before the end of burst, new read/write stops read/write burst and starts new read/write
burst.
During read/write burst with auto precharge, CAS interrupt can not be issued.
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FUNCTION TURTH TABLE (TABLE 1)
Current
State
IDLE
Row
Active
Read
Write
Read with
Auto
Precharge
Write with
Auto
Precharge
CS
RAS
CAS
WE
BA
ADDR
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
H
L
X
H
H
L
H
L
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
X
BA
BA
BA
X
OP code
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
X
X
X
X
CA, A10/AP
RA
A10/AP
X
OP code
X
X
X
CA, A10/AP
CA, A10/AP
RA
A10/AP
X
X
X
X
CA, A10/AP
CA, A10/AP
RA
A10/AP
X
X
X
X
CA, A10/AP
CA, A10/AP
RA
A10/AP
X
X
X
X
CA, A10/AP
RA, RA10
X
X
X
X
CA, A10/AP
RA, RA10
X
Elite Semiconductor Memory Technology Inc.
ACTION
NOP
NOP
ILLEGAL
ILLEGAL
Row (&Bank) Active ; Latch RA
NOP
Auto Refresh or Self Refresh
Mode Register Access
NOP
NOP
ILLEGAL
Begin Read ; latch CA ; determine AP
Begin Write ; latch CA ; determine AP
ILLEGAL
Precharge
ILLEGAL
NOP (Continue Burst to End Æ Row Active)
NOP (Continue Burst to End Æ Row Active)
Term burst Æ Row active
Term burst, New Read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, Precharge timing for Reads
ILLEGAL
NOP (Continue Burst to End Æ Row Active)
NOP (Continue Burst to End Æ Row Active)
Term burst Æ Row active
Term burst, New Read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, Precharge timing for Writes
ILLEGAL
NOP (Continue Burst to End Æ Precharge)
NOP (Continue Burst to End Æ Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Continue Burst to End Æ Precharge)
NOP (Continue Burst to End Æ Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Note
2
2
4
5
5
2
2
3
2
3
3
2
3
2
2
Publication Date: Mar. 2009
Revision: 1.4
25/46
ESMT
Current
State
Precharging
Row
Activating
Refreshing
Mode
Register
Accessing
Abbreviations :
M12S128324A
CS
RAS
CAS
WE
BA
ADDR
ACTION
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
H
L
L
L
L
X
H
H
H
L
L
L
X
H
H
H
L
L
L
X
H
H
L
L
X
H
H
H
L
X
H
H
L
H
H
L
X
H
H
L
H
H
L
X
H
L
H
L
X
H
H
L
X
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
X
X
X
X
X
X
X
X
X
X
X
X
X
CA
RA
A10/AP
X
X
X
X
CA
RA
A10/AP
X
X
X
X
X
X
X
X
X
X
X
NOP Æ Idle after tRP
NOP Æ Idle after tRP
ILLEGAL
ILLEGAL
ILLEGAL
NOP Æ Idle after tRDL
ILLEGAL
NOP Æ Row Active after tRCD
NOP Æ Row Active after tRCD
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP Æ Idle after tRC
NOP Æ Idle after tRC
ILLEGAL
ILLEGAL
ILLEGAL
NOP Æ Idle after 2clocks
NOP Æ Idle after 2clocks
ILLEGAL
ILLEGAL
ILLEGAL
RA = Row Address
NOP = No Operation Command
BA = Bank Address
CA = Column Address
Note
2
2
2
4
2
2
2
2
AP = Auto Precharge
*Note : 1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.
2. Illegal to bank in specified state ; Function may be legal in the bank indicated by BA, depending on the state of the
bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharge or in idle state. May precharge bank indicated by BA (and A10/AP).
5. Illegal if any bank is not idle.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
26/46
ESMT
M12S128324A
FUNCTION TRUTH TABLE (TABLE2)
Current
State
Self
Refresh
All
Banks
Precharge
Power
Down
All
Banks
Idle
Any State
other than
Listed
above
CKE
( n-1 )
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
H
H
H
H
H
H
H
L
H
H
L
L
CKE
n
X
H
H
H
H
H
L
X
H
H
H
H
H
L
H
L
L
L
L
L
L
L
L
H
L
H
L
CS
X
H
L
L
L
L
X
X
H
L
L
L
L
X
X
H
L
L
L
L
L
L
X
X
X
X
X
RAS CAS
X
X
H
H
H
L
X
X
X
H
H
H
L
X
X
X
H
H
H
L
L
L
X
X
X
X
X
X
X
H
H
L
X
X
X
X
H
H
L
X
X
X
X
H
H
L
H
L
L
X
X
X
X
X
WE
ADDR
X
X
H
L
X
X
X
X
X
H
L
X
X
X
X
X
H
L
X
H
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
RA
X
OP Code
X
X
X
X
X
ACTION
INVALID
Exit Self Refresh Æ Idle after tRC (ABI)
Exit Self Refresh Æ Idle after tRC (ABI)
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self Refresh)
INVALID
Exit Self Refresh Æ ABI
Exit Self Refresh Æ ABI
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Low Power Mode)
Refer to Table1
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
Row (& Bank) Active
Enter Self Refresh
Mode Register Access
NOP
Refer to Operations in Table 1
Begin Clock Suspend next cycle
Exit Clock Suspend next cycle
Maintain Clock Suspend
Note
6
6
7
7
8
8
8
9
9
Abbreviations : ABI = All Banks Idle, RA = Row Address
*Note : 6.CKE low to high transition is asynchronous.
7.CKE low to high transition is asynchronous if restart internal clock.
A minimum setup time 1CLK + tSS must be satisfy before any command other than exit.
8.Power down and self refresh can be entered only from the all banks idle state.
9.Must be a legal command.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
27/46
ESMT
M12S128324A
Single Bit Read-Write-Read Cycle(Same Page) @ CAS Latency = 3,Burst Length = 1
tCH
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
tCL
tCC
HIGH
CKE
tRAS
tRC
tSH
*Note1
CS
tSH
tRCD
tRP
tSS
RAS
tSS
tCCD
tSH
CAS
tSS
tSH
ADDR
Ra
tSS
*Note2
BA 0, BA1
BS
A10 /AP
Ra
Rb
Cc
Cb
Ca
*Note4
*Note2
BS
BS
BS
BS
BS
*Note3
*Note3
*Note3
*Note4
Rb
*Note2, 3
*Note2, 3
*Note2, 3
tSH
tSAC
DQ
Qa
tSLZ
Qc
Db
tSS
tOH
tSH
WE
tSS
tSS
tSH
DQM
Row Active
Read
W rite
Row Act ive
Read
Precharge
:D on' t Care
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
28/46
ESMT
Note :
M12S128324A
1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active @ read/write are controlled by BA0~BA1.
BA1
BA0
Active & Read/Write
0
0
Bank A
0
1
Bank B
1
0
Bank C
1
1
Bank D
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
A10/AP
0
1
BA1
BA0
Operating
0
0
Disable auto precharge, leave A bank active at end of burst.
0
1
Disable auto precharge, leave B bank active at end of burst.
1
0
Disable auto precharge, leave C bank active at end of burst.
1
1
Disable auto precharge, leave D bank active at end of burst.
0
0
Enable auto precharge , precharge bank A at end of burst.
0
1
Enable auto precharge , precharge bank B at end of burst.
1
0
Enable auto precharge , precharge bank C at end of burst.
1
1
Enable auto precharge , precharge bank D at end of burst.
4. A10/AP and BA0~BA1 control bank precharge when precharge is asserted.
A10/AP
BA1
BA0
Precharge
0
0
0
Bank A
0
0
1
Bank B
0
1
0
Bank C
0
1
1
Bank D
1
X
X
All Banks
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
29/46
ESMT
M12S128324A
Power Up Sequence
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
High level is n ecessar y
CS
tRC
tRP
tRC
RAS
CAS
ADDR
Key
RAa
BA1
BA0
RAa
A10 /AP
DQ
High-Z
WE
DQM
High level is necessar y
Precharge
Auto Ref resh
(All Banks)
Auto Ref res h
Mode Register Set
Row Active
(A- Bank)
: Don't care
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
30/46
ESMT
M12S128324A
Read & Write Cycle at Same Bank @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
HIGH
CKE
*Note1
t RC
CS
tRCD
RAS
*Note2
CAS
ADDR
Ra
Rb
Ca
Cb
BA1
BA0
A10/AP
`
Rb
Ra
tOH
Qa0
CL=2
Qa1
Qa2
Qa3
t S AC
DQ
Db1
Db0
tS H Z
Db2
Db3
tRDL
*Note3
tOH
CL=3
Qa0
Qa1
t S AC
Qa2
Db1
Db0
Qa3
tS H Z
*Note3
Db2
Db3
tRDL
WE
DQM
Row Active
(A- Ban k)
Read
(A- Ban k)
Precharge
Row Active
W rite
Precharge
(A-Ban k)
(A- Bank)
(A- Bank)
(A-Bank)
: Don't care
*Note :
1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row
precharge. Last valid output will be Hi-Z (tSHZ) after the clock.
3. Output will be Hi-Z after the end of burst. (1,2,4,8 & Full page bit burst)
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
31/46
ESMT
M12S128324A
Page Read & Write Cycle at Same Bank @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
HIGH
CKE
CS
tRCD
RAS
*Note2
CAS
ADDR
Ra
Ca
Cb
Cd
Cc
BA1
BA0
A10 /A P
Ra
tRDL
Qa0
CL = 2
Q a1
Q b0
Q b1
Q b2
Dc0
Dc1
Dd0
Dd1
Qa0
Qa1
Qb0
Q b1
Dc0
Dc1
Dd0
Dd1
DQ
CL = 3
tCDL
WE
*Note1
*Note3
DQM
Row Active
( A - Bank )
Read
( A - Bank )
Read
( A - Bank )
Write
( A - Bank )
Write
( A - Bank )
Precharge
(A - B an k )
:D on' t Care
Note : 1. To Write data before burst read ends. DQM should be asserted three cycle prior to write command to avoid bus
contention.
2. Row precharge will interrupt writing. Last data input , tRDL before row precharge , will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input
data after Row precharge cycle will be masked internally.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
32/46
ESMT
M12S128324A
Page Read Cycle at Different Bank @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
HIGH
*Note1
CS
RAS
*Note2
CAS
ADDR
RAa
RBb
RAa
RBb
CAa
RCc
CBb
RDd
CCc
CDd
BA1
BA0
A10 /AP
CL= 2
RCc
QAa0
RDd
Q A a 1 Q A a 2 Q B b 0 Q B b 1 Q B b 2 Q C c 0 Q C c 1 Q C c 2 QD d 0 QD d 1 Q D d 2
DQ
CL= 3
Q A a 0 Q A a 1 Q A a 2 Q B b 0 Q B b 1 Q B b 2 Q C c 0 Q C c 1 Q C c 2 QD d 0 Q D d 1 QD d 2
WE
DQM
Row Act ive
( A-B ank )
Read
(A -Bank )
Row Active
( B-B ank )
Read
(B -Bank )
Row Act ive
(C -B an k)
Read
( C- Bank )
Row Act ive
( D- Bank )
Pre charg e
(A- Ban k)
Pre charg e
(D -B an k)
Read
( D- Bank )
Pre charg e
(C -B an k)
Pre charg e
(B- Ban k)
:Don't Care
Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
33/46
ESMT
M12S128324A
Page Write Cycle at Different Bank @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
HIGH
CKE
CS
RAS
*Note2
CAS
ADDR
RAa
RBb
RAa
RBb
CAa
CBb
RCc
RDd
RCc
RDd
CCc
CDd
BA1
BA0
A10 /AP
DQ
DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 D C c 0 D C c 1 DD d0 DD d1 CD d2
tCDL
tRDL
WE
*Note1
DQM
Row Act ive
( A - Bank )
Write
(A -Bank )
Write
(B -Bank )
Row Active
( B-B ank )
Row Act ive
( D- Bank )
Row Act ive
( C- Bank )
Wri te
(D -B an k)
Pr echarg e
(A ll Bank s)
Write
(C -B an k)
: Don't care
*Note : 1. To interrupt burst write by Row precharge , DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge , both the write and the precharge banks must be the same.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
34/46
ESMT
M12S128324A
Read & Write Cycle at Different Bank @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
CDb
RBc
14
15
16
17
18
19
CLOCK
HIGH
CKE
CS
RAS
CAS
ADDR
RAa
CAa
RDb
CBc
BA1
BA0
A10 /AP
RAa
RAc
RBb
*Note2
tCDL
tRCD
CL = 2
QAa0 QAa1 QAa2 QAa3
*Note1
DD b0 Ddb1 DD b2 DD d3
QBc0 QBc1 QBc2
DD b0 Ddb1 DD b2 DD d3
QBc0 QBc1
DQ
CL = 3
QAa0 QAa1 QAa2 QAa3
WE
DQM
Row Active
(A-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
Row Active
(D-Bank)
W rite
(D-Bank)
Read
(B- Ban k )
Row Active
(B-Bank)
:D on' t Ca re
*Note : 1. tCDL should be met to complete write.
2. tRCD should be met.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
35/46
ESMT
M12S128324A
Read & Write cycle with Auto Precharge @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
HIGH
CKE
CS
RAS
CAS
ADDR
Ra
Rb
Ra
Rb
Ca
Cb
BA0
BA1
A10 /AP
QAa0 QAa1 QAa2 QAa3
CL =2
DD b0 Ddb1 DD b2 DD d3
DQ
CL =3
QAa0 QAa1 QAa2 QAa3
DD b0 Ddb1 DD b2 DD d3
WE
DQM
Row Active
( A - Bank )
Read with
Auto Precharge
( A - Bank )
Auto Pr echar ge
Star t Poin t
W rite with
Auto Pr echar ge
( D- B an k )
Auto Pr echar ge
Star t Poin t
(D- Ban k )
Row Active
( D - Bank )
:D on' t Ca re
*Note : 1. tCDL should be controlled to meet minimum tRAS before internal precharge start.
(In the case of Burst Length = 1 & 2)
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
36/46
ESMT
M12S128324A
Clock Suspension & DQM Operation Cycle @ CAS Letency = 2 , Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
Ra
Ca
Cc
Cb
BA1
BA0
A10 /A P
Ra
tRCD
*Note2
DQ
Q a0
Qa1
Qa2
Q b0
Q a3
tSHZ
Q b1
Dc2
Dc0
tSHZ
WE
*Note1
DQM
Row Active
Read
Clock
Su pen s i on
Read
W rite
DQM
Read DQM
W rite
DQM
W rite
Clock
Suspension
:Don't Care
*Note : 1. DQM is needed to prevent bus contention.
2. tRCD should be met.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
37/46
ESMT
M12S128324A
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
HIGH
CKE
CS
RAS
CAS
ADDR
RAa
CAa
CAb
*Note1
*Note 1
BA1
BA0
A10 /AP
RAa
*Note2
CL=2
1
1
QAa0 QAa1 QAa2 QAa3 QAa4
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
DQ
CL= 3
2
2
QAa0 QAa1 QAa2 QAa3 QAa4
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
WE
DQM
Row Active
( A- B an k )
Read
(A- Ban k)
Burst Stop
Read
(A- Ban k)
Precharge
( A- Ban k )
:Don't Care
*Note : 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the lable 1,2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
2. Burst stop is valid at every burst length.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
38/46
ESMT
M12S128324A
Write interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full page
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
HIGH
CKE
CS
RAS
CAS
ADDR
RAa
CAb
CAa
BA1
BA0
A10 /AP
RAa
tRDL
tBDL
DAa0 DAa1 DAa2 DAa3 DAa4
DQ
*Note1
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5
WE
DQM
Row Active
( A- B an k )
W rite
(A- Ban k)
Burst Stop
W rite
(A- Ban k )
Precharge
( A- B an k )
:Don't Care
*Note : 1. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by
AC parameter of tRDL.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input
data after Row precharge cycle will be masked internally.
2. Burst stop is valid at every burst length.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
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ESMT
M12S128324A
Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
*Note2
tSS
tSS
*Note1
tSS
CKE
*Note3
CS
RAS
CAS
ADDR
Ra
Ca
BA1
BA0
A10 /AP
Ra
tSHZ
DQ
Q a0
Qa1
Qa2
WE
DQM
Pr ech ar ge
Pow er - D own
Entry
Row Active
Pr ech arge
Power - Down
Exi t
Active
Power - dow n
Entry
Read
Precharge
Active
Power - down
Exi t
: Don't care
*Note:
1. All banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + tSS prior to Row active command.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
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ESMT
M12S128324A
Self Refresh Entry & Exit Cycle
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
*Note4
*Note2
tRCmin
*Note1
*Note6
CKE
*Note3
tSS
*Note5
CS
RAS
*Note7
CAS
ADDR
BA0, BA1
A10 /A P
DQ
Hi-Z
Hi-Z
WE
DQM
Self Ref r esh En tr y
S e l f R ef r e s h E xi t
Auto Ref res h
: Don't care
*Note : TO ENTER SELF REFRESH MODE
1. CS , RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays “Low”.
cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS starts from high.
6. Minimum tRC is required after CKE going high to complete self refresh exit.
7. 4K cycles of burst auto refresh is required immediately before self refresh entry and immediately after self refresh exit.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
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ESMT
M12S128324A
Mode Register Set Cycle
0
1
2
3
Auto Refresh Cycle
4
5
6
0
1
2
3
4
5
6
7
8
9
10
CLOCK
HIGH
HIGH
CKE
CS
tRC
*Note2
RAS
*Note1
CAS
*Note3
ADDR
Ra
Key
HI-Z
HI-Z
DQ
WE
DQM
MRS
New
Com mand
New C om m an d
Auto Ref res h
:Don't Care
All banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
*Note : 1. CS , RAS , CAS , & WE activation at the same clock cycle with address key will set internal mode register.
2. Minimum 2 clock cycles should be met before new RAS activation.
3. Please refer to Mode Register Set table.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
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ESMT
PACKING
86 - LEAD
M12S128324A
DIMENSIONS
TSOP(II)
Symbol
Min
DRAM(400mil)
Dimension in mm
Norm
0.002
0.037
0.007
0.007
0.005
0.004
0.60
0.016
0.12
0.12
0.25
0.005
0.005
0.010
θ
0°
8°
0°
8°
θ1
0°
θ2
10°
15°
20°
10°
15°
20°
θ3
10°
15°
20°
10°
15°
20°
A
A1
A2
b
b1
c
c1
D
ZD
E
E1
L
L1
e
R1
R2
0.05
0.95
0.17
0.17
0.12
0.10
0.40
0.10
1.00
0.20
0.127
22.22 BSC
0.61 REF
11.76 BSC
10.16 BSC
0.50
0.80 REF
0.50 BSC
Min
Dimension in inch
Norm
Max
1.20
0.15
1.05
0.27
0.23
0.21
0.16
0.004
0.039
0.008
0.005
0.875 BSC
0.024 REF
0.463 BSC
0.400 BSC
0.020
0.031 REF
0.020 BSC
Max
0.047
0.006
0.011
0.018
0.009
0.008
0.006
0.024
0°
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
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ESMT
M12S128324A
PACKING
DIMENSIONS
90-BALL
SDRAM
( 8x13 mm )
Symbol
Dimension in mm
Min
Norm
Max
A
1.40
A1
0.30
0.40
A2
0.84
0.89
0.94
øb
0.40
0.50
D
7.90
8.00
8.10
E
12.90
13.00
13.10
D1
6.40
E1
11.20
e
0.80
Controlling dimension : Millimeter.
Elite Semiconductor Memory Technology Inc.
Dimension in inch
Min
Norm
Max
0.055
0.012
0.016
0.033
0.035
0.037
0.016
0.020
0.311
0.315
0.319
0.508
0.512
0.516
0.252
0.441
0.031
Publication Date: Mar. 2009
Revision: 1.4
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ESMT
M12S128324A
Revision History
Revision
Date
1.0
2008.07.07
1.1
2008.07.16
1.2
2008.07.16
Modify ICC4 and ICC5
1.3
2008.08.07
Modify ICC4 and ICC5 for -7
1.4
2009.03.27
1. Modify the description about self refresh operation
2. Correct type error
Elite Semiconductor Memory Technology Inc.
Description
Original
1. Modify ICC3N
2. Modify the figure of DC output load circuit
Publication Date: Mar. 2009
Revision: 1.4
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ESMT
M12S128324A
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form or by any
means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at the time of
publication. ESMT assumes no responsibility for any error in this document, and
reserves the right to change the products or specification in this document without
notice.
The information contained herein is presented only as a guide or examples for the
application of our products. No responsibility is assumed by ESMT for any
infringement of patents, copyrights, or other intellectual property rights of third
parties which may result from its use. No license, either express , implied or
otherwise, is granted under any patents, copyrights or other intellectual property
rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To minimize
risks associated with customer's application, adequate design and operating
safeguards against injury, damage, or loss from such failure, should be provided by
the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as, but not
limited to, life support devices or system, where failure or abnormal operation may
directly affect human lives or cause physical injury or property damage. If products
described here are to be used for such kinds of application, purchaser must do its
own quality assurance testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
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