MRF171 TMOS RF FET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF171 is a gold metallized N-Channel Enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 200 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A S FEATURES: D Ø.125 NOM. FULL R J • PG = 12 dB min at 150 MHz • Omnigold™ Metalization System • 2 – 200 MHz operation .125 S G C D E F I GH MAXIMUM RATINGS ID 4.5 A VDSS 65 V VDGR 65 V VGS ± 40 V PDISS 115 W @ TC = 25 °C MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 E TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.52 °C/W CHARACTERISTICS MAXIMUM DIM F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 .280 / 7.11 I J NONE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM IDS = 10 mA VGS = 0 V IDSS VDS = 28 V VGS = 0 V 5.0 mA IGSS VDS = 0 V VGS = 20 V 1.0 µA VGS(th) ID = 25 mA VDS = 10 V 1.0 6.0 V ID = 1 A VDS = 10 V 0.7 Ciss Coss Crss VDS = 28 V VGS = 0 V Gps η VDD = 28 V f = 150 MHz IDQ = 25 mA gfs 65 UNITS BVDSS f = 1.0 MHz Pout = 45 W 12 50 V mho 55 70 14 pF 15 60 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1