VFT150-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT150-28 is a gold metallized N-Channel enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° S FU LL R FEATURES: D Ø .125 NO M . C B • PG = 10 dB Typical at 175 MHz • No thermal Runaway • Omnigold™ Metalization System • Class-A or AB S G E D G H F K I J MAXIMUM RATINGS DIM M INIMUM inches / m m inches / m m A .220 / 5.59 .230 / 5.84 M AX IM UM .125 / 3.18 B 16 A ID L A C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 VDSS 65 V E F .970 / 24.64 .980 / 24.89 VGS ±40 V G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 65 V I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 PDISS 300 W @ TC = 25 °C K .980 / 24.89 1.050 / 26.67 TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.6 °C/W VDGR CHARACTERISTICS .280 / 7.11 ORDER CODE: ASI 10700 NONE TC = 25 °C SYMBOL BVDSS L .125 / 3.18 TEST CONDITIONS MINIMUM IDS = 100 mA TYPICAL MAXIMUM UNITS V 60 IDSS VDS = 28 V VGS = 0 V 5.0 mA IGSS VDS = 0 V VGS = 20 V 1.0 µA ID = 100 mA VDS = 10 V 1.0 5.0 V ID = 5 A VDS = 10 V 3.5 VGS(th) gfs Ciss Coss Crss VDS = 28 V VGS = 0 V PG ηD VDD = 28 V PIN = 15 W IDQ = 250 mA f = 1.0 MHz Pout = 150 W f = 175 MHz 8.5 50 mho 375 188 26 pF 10 60 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VFT150-28 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2