CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM Features Functional Description ■ Supports bus operation up to 250 MHz ■ Available speed grades are 250, 200, and 167 MHz ■ Registered inputs and outputs for pipelined operation ■ 2.5V core power supply ■ 2.5V IO operation ■ Fast clock-to-output time ❐ 3.0 ns (for 250 MHz device) ■ Provide high performance 3-1-1-1 access rate The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25[1] SRAM integrates 2M x 36/4M x 18/1M × 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. ■ User selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences ■ Separate processor and controller address strobes ■ Synchronous self timed writes ■ Asynchronous output enable ■ Single cycle chip deselect ■ CY7C1480BV25, CY7C1482BV25 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non-Pb-free 165-ball FBGA package. CY7C1486BV25 available in Pb-free and non-Pb-free 209-ball FBGA package ■ IEEE 1149.1 JTAG-Compatible Boundary Scan ■ “ZZ” Sleep Mode option Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) is active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self timed Write cycle. This part supports Byte Write operations (see “Pin Definitions” on page 7 and “Truth Table” on page 10 for further details). Write cycles can be one to two or four bytes wide, as controlled by the byte write control inputs. When it is active LOW, GW writes all bytes. Selection Guide Description 250 MHz 200 MHz 167 MHz Unit Maximum Access Time 3.0 3.0 3.4 ns Maximum Operating Current 450 450 400 mA Maximum CMOS Standby Current 120 120 120 mA Note 1. For best practices recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines. Cypress Semiconductor Corporation Document #: 001-15143 Rev. *D • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised February 29, 2008 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Logic Block Diagram – CY7C1480BV25 (2M x 36) A 0, A1, A ADDRESS REGISTER 2 A [1:0] MODE ADV CLK Q1 BURST COUNTER CLR AND LOGIC ADSC Q0 ADSP BW D DQ D ,DQP D BYTE WRITE REGISTER DQ D ,DQPD BYTE WRITE DRIVER BW C DQ C ,DQP C BYTE WRITE REGISTER DQ C ,DQP C BYTE WRITE DRIVER DQ B ,DQP B BYTE WRITE REGISTER DQ B ,DQP B BYTE WRITE DRIVER BW B BW A BWE ZZ SENSE AMPS OUTPUT REGISTERS OUTPUT BUFFERS E DQs DQP A DQP B DQP C DQP D DQ A ,DQP A BYTE WRITE DRIVER DQ A ,DQP A BYTE WRITE REGISTER GW CE 1 CE 2 CE 3 OE MEMORY ARRAY ENABLE REGISTER INPUT REGISTERS PIPELINED ENABLE SLEEP CONTROL Logic Block Diagram – CY7C1482BV25 (4M x 18) A0, A1, A ADDRESS REGISTER 2 MODE A[1:0] BURST Q1 COUNTER AND LOGIC CLR Q0 ADV CLK ADSC ADSP BW B DQ B, DQP B WRITE DRIVER DQ B, DQP B WRITE REGISTER MEMORY ARRAY BW A DQ A, DQP A WRITE DRIVER DQ A, DQP A WRITE REGISTER SENSE AMPS OUTPUT REGISTERS OUTPUT BUFFERS DQs DQP A DQP B E BWE GW CE 1 CE2 CE3 ENABLE REGISTER PIPELINED ENABLE INPUT REGISTERS OE ZZ SLEEP CONTROL Document #: 001-15143 Rev. *D Page 2 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Logic Block Diagram – CY7C1486BV25 (1M x 72) ADDRESS REGISTER A 0, A1,A A[1:0] MODE Q1 BINARY COUNTER CLR Q0 ADV CLK ADSC ADSP BW H DQ H , DQP H WRITE DRIVER DQ H , DQP H WRITE DRIVER BW G DQ F, DQP F WRITE DRIVER DQ G , DQP G WRITE DRIVER BW F DQ F, DQP F WRITE DRIVER DQ F, DQP F WRITE DRIVER BW E DQ E , DQP E WRITE DRIVER E , DQP DQ BYTE “a” E WRITE DRIVER BW D DQ D , DQP D WRITE DRIVER DQ D , DQP D WRITE DRIVER BW C DQ C, DQP C WRITE DRIVER DQ C, DQP C WRITE DRIVER MEMORY ARRAY SENSE AMPS BW B BW A BWE GW CE1 CE2 CE3 OE ZZ DQ B , DQP B WRITE DRIVER DQ B , DQP B WRITE DRIVER OUTPUT BUFFERS E DQ A , DQP A WRITE DRIVER DQ A , DQP A WRITE DRIVER ENABLE REGISTER OUTPUT REGISTERS PIPELINED ENABLE INPUT REGISTERS DQs DQP A DQP B DQP C DQP D DQP E DQP F DQP G DQP H SLEEP CONTROL Document #: 001-15143 Rev. *D Page 3 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Pin Configurations NC NC NC VDDQ VSSQ NC NC DQB DQB VSSQ VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSSQ DQB DQB DQPB NC VSSQ VDDQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 CY7C1482BV25 (4M x 18) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 Document #: 001-15143 Rev. *D A NC NC VDDQ VSSQ NC DQPA DQA DQA VSSQ VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA NC NC VSSQ VDDQ NC NC NC A A A A A A A A A A A A A A A A A A 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQPB DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA DQPA MODE A A A A A1 A0 A A VSS VDD CY7C1480BV25 (2M x 36) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A A A A A1 A0 A A VSS VDD DQPC DQC DQc VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD DQPD 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE1 CE2 NC NC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE1 CE2 BWD BWC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A Figure 1. 100-Pin TQFP Pinout Page 4 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Pin Configurations (continued) 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1480BV25 (2M x 36) 1 A B C D E F G H J K L M N P NC/288M R 2 3 4 5 6 7 8 9 10 11 CE3 BWE ADSC ADV A NC CE1 BWC BWB A CE2 BWD BWA CLK GW ADSP A NC DQC VDDQ VSS VSS VSS VSS VSS VSS VDDQ VDDQ VSS VDD OE VSS VDD NC/576M VDDQ NC/1G DQB DQPB DQB DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB DQC NC DQD DQC NC DQD VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ DQB NC DQA DQB ZZ DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQPD DQD NC VDDQ VDDQ VDD VSS VSS NC VSS A VSS NC VDD VSS VDDQ VDDQ DQA NC DQA DQPA NC A A A TDI A1 TDO A A A A MODE A A A TMS TCK A A A A NC/144M DQPC DQC A A0 CY7C1482BV25 (4M x 18) 1 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P NC/288M A CE1 CE2 BWB NC CE3 CLK ADV ADSP A BWA ADSC OE A NC BWE GW VSS VDD VSS VSS VSS VSS VDD VDDQ VSS VSS VSS VDDQ NC/1G NC R NC/576M NC/144M A NC NC NC DQB VDDQ NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA NC NC NC DQB DQB VDD VDD VDD VDD VDDQ VDDQ NC VDDQ NC VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDD VSS VSS VSS VSS VSS DQB NC NC VDDQ VDDQ NC VDDQ NC NC DQA DQA DQA ZZ NC DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC VDDQ A DQPA DQA DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB DQPB NC NC VDDQ VDDQ VDD VSS VSS NC VSS A VSS NC VDD VSS VDDQ VDDQ DQA NC NC NC NC A A A TDI A1 TDO A A A A MODE A A A TMS A0 TCK A A A A Document #: 001-15143 Rev. *D Page 5 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Pin Configurations (continued) 209-Ball FBGA (14 x 22 x 1.76 mm) Pinout CY7C1486BV25 (1M × 72) 1 2 3 4 5 6 A DQG DQG A CE2 B DQG DQG BWSC BWSG NC/288M C DQG DQG BWSH BWSD NC/144M CE1 D DQG DQG VSS NC NC/1G OE E DQPG DQPC VDDQ VDDQ VDD VDD F DQC DQC VSS VSS VSS G DQC DQC VDDQ VDDQ H DQC DQC VSS J DQC DQC K NC L ADSP ADSC 7 ADV 8 9 10 11 CE3 A DQB DQB BWSB BWSF DQB DQB NC/576M BWSE BWSA DQB DQB NC VSS DQB DQB VDD VDDQ VDDQ DQPF DQPB NC VSS VSS VSS DQF DQF VDD NC VDD VDDQ VDDQ DQF DQF VSS VSS NC VSS VSS VSS DQF DQF VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQF DQF NC CLK NC VSS VSS VSS NC NC NC NC DQH DQH VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQA DQA M DQH DQH VSS VSS VSS NC VSS VSS VSS DQA DQA N DQH DQH VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQA DQA P DQH DQH VSS VSS VSS ZZ VSS VSS VSS DQA DQA R DQPD DQPH VDDQ VDDQ VDD VDD VDD VDDQ VDDQ T DQD DQD VSS NC NC MODE NC NC VSS DQE DQE U DQD DQD A A A A A A A DQE DQE V DQD DQD A A A A1 A A A DQE DQE W DQD DQD TMS TDI TCK DQE DQE Document #: 001-15143 Rev. *D A BWE A0 A GW A TDO DQPA DQPE Page 6 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Table 1. Pin Definitions Pin Name IO Description A0, A1, A InputSynchronous Address Inputs Used to Select One of the Address Locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A1: A0 are fed to the two-bit counter. BWA, BWB, BWC, BWD, BWE, BWF, BWG, BWH InputSynchronous Byte Write Select Inputs, Active LOW. Qualified with BWE to conduct byte writes to the SRAM. Sampled on the rising edge of CLK. GW InputSynchronous Global Write Enable Input, Active LOW. When asserted LOW on the rising edge of CLK, a global write is conducted (ALL bytes are written, regardless of the values on BWX and BWE). BWE InputSynchronous Byte Write Enable Input, Active LOW. Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a byte write. CLK InputClock Clock Input. Captures all synchronous inputs to the device. Also increments the burst counter when ADV is asserted LOW during a burst operation. CE1 InputSynchronous Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select or deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a new external address is loaded. CE2 InputSynchronous Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select or deselect the device. CE2 is sampled only when a new external address is loaded. CE3 InputSynchronous Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select or deselect the device. CE3 is sampled only when a new external address is loaded. OE InputAsynchronous Output Enable, Asynchronous Input, Active LOW. Controls the direction of the IO pins. When LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. ADV InputSynchronous Advance Input Signal, Sampled on the Rising Edge of CLK, Active LOW. When asserted, it automatically increments the address in a burst cycle. ADSP InputSynchronous Address Strobe from Processor, Sampled on the Rising Edge of CLK, Active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. ADSC InputSynchronous Address Strobe from Controller, Sampled on the Rising Edge of CLK, Active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ZZ InputAsynchronous ZZ “Sleep” Input, Active HIGH. When asserted HIGH places the device in a non-time-critical “sleep” condition with data integrity preserved. For normal operation, this pin must be LOW or left floating. ZZ pin has an internal pull down. DQs, DQPs IOSynchronous Bidirectional Data IO Lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state condition. VDD Power Supply Power Supply Inputs to the Core of the Device. VSS VSSQ[2] VDDQ Ground IO Ground Ground for the Core of the Device. Ground for the IO Circuitry. IO Power Supply Power Supply for the IO Circuitry. Note 2. Applicable for TQFP package. For BGA package VSS serves as ground for the core and the IO circuitry. Document #: 001-15143 Rev. *D Page 7 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Table 1. Pin Definitions (continued) Pin Name MODE TDO IO Description Input Static Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and must remain static during device operation. Mode pin has an internal pull up. JTAG Serial Output Synchronous Serial Data Out to the JTAG Circuit. Delivers data on the negative edge of TCK. If the JTAG feature is not used, this pin must be disconnected. This pin is not available on TQFP packages. TDI JTAG Serial Input Serial Data In to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG feature Synchronous is not used, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. TMS JTAG Serial Input Serial Data In to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG feature Synchronous is not used, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. TCK JTAG Clock Clock Input to the JTAG Circuitry. If the JTAG feature is not used, this pin must be connected to VSS. This pin is not available on TQFP packages. NC - No Connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are address expansion pins and are not internally connected to the die. Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 3.0 ns (250 MHz device). The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25 supports secondary cache in systems using either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™ processors. The linear burst sequence is suited for processors that use a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BWX) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide easy bank selection and output tri-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) CE1, CE2, CE3 are all asserted active, and (3) the write signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs (A) is stored into the address advancement logic and the Address Register while being presented to the memory array. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is allowed to Document #: 001-15143 Rev. *D propagate through the output register and onto the data bus within 3.0 ns (250-MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state; its outputs are always tri-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single read cycles are supported. After the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output tri-states immediately. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1, CE2, CE3 are all asserted active. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The write signals (GW, BWE, and BWX) and ADV inputs are ignored during this first cycle. ADSP-triggered write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH, then the BWE and BWX signals control the write operation. The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25 provides Byte Write capability that is described in the “Truth Table for Read/Write” on page 11. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BWX) input, selectively writes to only the desired bytes. Bytes not selected during a byte write operation remain unaltered. A synchronous self-timed write mechanism is provided to simplify the write operations. Because CY7C1480BV25/CY7C1482BV25/CY7C1486BV25 is a common IO device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so tri-states the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a write cycle is detected, regardless of the state of OE. Page 8 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Single Write Accesses Initiated by ADSC Sleep Mode ADSC write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the write inputs (GW, BWE, and BWX) are asserted active to conduct a write to the desired byte(s). ADSC-triggered write accesses need a single clock cycle to complete. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The ADV input is ignored during this cycle. If a global write is conducted, the data presented to the DQs is written into the corresponding address location in the memory core. If a byte write is conducted, only the selected bytes are written. Bytes not selected during a byte write operation remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. The ZZ input pin is asynchronous. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Because CY7C1480BV25/CY7C1482BV25/CY7C1486BV25 is a common IO device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so tri-states the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25 provides a two-bit wraparound counter, fed by A1: A0, that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. Asserting ADV LOW at clock rise automatically increments the burst counter to the next address in the burst sequence. Both read and write burst operations are supported. Table 2. Interleaved Burst Address Table (MODE = Floating or VDD) First Address A1: A0 00 01 10 11 Second Address A1: A0 01 00 11 10 Third Address A1: A0 10 11 00 01 Fourth Address A1: A0 11 10 01 00 Table 3. Linear Burst Address Table (MODE = GND) First Address A1: A0 00 01 10 11 Second Address A1: A0 01 10 11 00 Third Address A1: A0 10 11 00 01 Fourth Address A1: A0 11 00 01 10 ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max Unit IDDZZ Sleep Mode Standby Current ZZ > VDD – 0.2V 120 mA tZZS Device Operation to ZZ ZZ > VDD – 0.2V 2tCYC ns tZZREC ZZ Recovery Time ZZ < 0.2V tZZI ZZ Active to Sleep Current This parameter is sampled tRZZI ZZ Inactive to Exit Sleep Current This parameter is sampled Document #: 001-15143 Rev. *D 2tCYC ns 2tCYC 0 ns ns Page 9 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Table 4. Truth Table The truth table for CY7C1480BV25, CY7C1482BV25, and CY7C1486BV25 follows.[3, 4, 5, 6, 7] Operation Add. Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK DQ Deselect Cycle, Power Down None H X X L X L X X X L-H Tri-State Deselect Cycle, Power Down None L L X L L X X X X L-H Tri-State Deselect Cycle, Power Down None L X H L L X X X X L-H Tri-State Deselect Cycle, Power Down None L L X L H L X X X L-H Tri-State Deselect Cycle, Power Down None L X H L H L X X X L-H Tri-State Sleep Mode, Power Down None X X X H X X X X X X Tri-State Read Cycle, Begin Burst External L H L L L X X X L L-H Q Read Cycle, Begin Burst External L H L L L X X X H L-H Tri-State Write Cycle, Begin Burst External L H L L H L X L X L-H D Read Cycle, Begin Burst External L H L L H L X H L L-H Q Read Cycle, Begin Burst External L H L L H L X H H L-H Tri-State Read Cycle, Continue Burst Next X X X L H H L H L L-H Q Read Cycle, Continue Burst Next X X X L H H L H H L-H Tri-State Read Cycle, Continue Burst Next H X X L X H L H L L-H Q Read Cycle, Continue Burst Next H X X L X H L H H L-H Tri-State Write Cycle, Continue Burst Next X X X L H H L L X L-H D Write Cycle, Continue Burst Next H X X L X H L L X L-H D Read Cycle, Suspend Burst Current X X X L H H H H L L-H Q Read Cycle, Suspend Burst Current X X X L H H H H H L-H Tri-State Read Cycle, Suspend Burst Current H X X L X H H H L L-H Q Read Cycle, Suspend Burst Current H X X L X H H H H L-H Tri-State Write Cycle, Suspend Burst Current X X X L H H H L X L-H D Write Cycle, Suspend Burst Current H X X L X H H L X L-H D Notes 3. X = Do Not Care, H = Logic HIGH, L = Logic LOW. 4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H. 5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH before the start of the write cycle to enable the outputs to tri-state. OE is a do not care for the remainder of the write cycle 7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as outputs when OE is active (LOW). Document #: 001-15143 Rev. *D Page 10 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Table 5. Truth Table for Read/Write The read-write truth table for the CY7C1480BV25 follows.[5] Function (CY7C1480BV25) GW BWE BWD BWC BWB BWA Read H H X X X X Read H L H H H H Write Byte A – (DQA and DQPA) H L H H H L Write Byte B – (DQB and DQPB) H L H H L H Write Bytes B, A H L H H L L Write Byte C – (DQC and DQPC) H L H L H H Write Bytes C, A H L H L H L Write Bytes C, B H L H L L H Write Bytes C, B, A H L H L L L Write Byte D – (DQD and DQPD) H L L H H H Write Bytes D, A H L L H H L Write Bytes D, B H L L H L H Write Bytes D, B, A H L L H L L Write Bytes D, C H L L L H H Write Bytes D, C, A H L L L H L Write Bytes D, C, B H L L L L H Write All Bytes H L L L L L Write All Bytes L X X X X X Table 6. Truth Table for Read/Write The read-write truth table for the CY7C1482BV25 follows.[5] Function (CY7C1482BV25) GW BWE BWB BWA Read H H X X Read H L H H Write Byte A – (DQA and DQPA) H L H L Write Byte B – (DQB and DQPB) H L L H Write Bytes B, A H L L L Write All Bytes H L L L Write All Bytes L X X X Table 7. Truth Table for Read/Write The read-write truth table for the CY7C1486BV25 follows.[8] Function (CY7C1486BV25) GW BWE BWX Read H H X Read H L All BW = H Write Byte x – (DQx and DQPx) H L L Write All Bytes H L All BW = L Write All Bytes L X X Note 8. BWx represents any byte write signal BW[0..7]. To enable any byte write BWx, a Logic LOW signal must be applied at clock rise. Any number of byte writes can be enabled at the same time for a supplied write. Document #: 001-15143 Rev. *D Page 11 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25 incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC-standard 2.5V IO logic levels. Test Mode Select (TMS) The TMS input gives commands to the TAP controller and is sampled on the rising edge of TCK. You can leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. The TDI ball serially inputs information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information about loading the instruction register, see the TAP Controller State Diagram. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See TAP Controller Block Diagram.) Disabling the JTAG Feature Test Data-Out (TDO) It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, tie TCK LOW (VSS) to prevent device clocking. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull up resistor. TDO must be left unconnected. At power up, the device comes up in a reset state, which does not interfere with the operation of the device. The TDO output ball is used to serially clock data-out from the registers. Whether the output is active depends on the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See TAP Controller State Diagram.) Figure 3. TAP Controller Block Diagram Figure 2. TAP Controller State Diagram 0 1 TEST-LOGIC RESET 0 RUN-TEST/ IDLE Bypass Register 0 2 1 0 1 SELECT DR-SCA N 1 SELECT IR-SCAN 0 1 1 TDI 0 1 CAPTURE-DR Selection Circuitry 0 x . . . . . 2 1 0 SHIFT-IR 1 0 Boundary Scan Register 1 EXIT1-DR 1 EXIT1-IR 0 1 0 TCK PAUSE-DR 0 PAUSE-IR 0 TM S 1 0 TAP CONTROLLER 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-DR 1 TDO Identification Register 0 SHIFT-DR Selection Circuitry 31 30 29 . . . 2 1 0 CAPTURE-IR 0 Instruction Register 0 UPDATE-IR 1 0 The 0/1 next to each state represents the value of TMS at the rising edge of TCK. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Document #: 001-15143 Rev. *D Performing a TAP Reset Perform a RESET by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers Registers are connected between the TDI and TDO balls to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Page 12 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the “TAP Controller Block Diagram” on page 12. At power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to enable fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This shifts data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The x36 configuration has a 73-bit-long register, and the x18 configuration has a 54-bit-long register. The boundary scan register is loaded with the contents of the RAM IO ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller moves to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the IO ring. rather, it performs a capture of the IO ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction that is executed whenever the instruction register is loaded with all zeros. EXTEST is not implemented in this SRAM TAP controller, and therefore this device is not compliant to 1149.1. The TAP controller does recognize an all-zero instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state. IDCODE The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO balls and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power up or whenever the TAP controller is in a test logic reset state. SAMPLE Z The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI and the LSB is connected to TDO. The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO balls when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. Identification (ID) Register SAMPLE/PRELOAD The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in “Identification Register Definitions” on page 15. SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the device TAP controller is not fully 1149.1 compliant. TAP Instruction Set Be aware that the TAP controller clock can only operate at a frequency up to 10 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output may undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that may be captured. Repeatable results may not be possible. Overview Eight different instructions are possible with the three-bit instruction register. All combinations are listed in “Identification Codes” on page 16. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in detail below. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address data or control signals into the SRAM and cannot preload the IO buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; Document #: 001-15143 Rev. *D When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a Page 13 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 BYPASS SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls. Note that because the PRELOAD part of the command is not implemented, putting the TAP to the Update-DR state while performing a SAMPLE/PRELOAD instruction has the same effect as the Pause-DR command. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. Figure 4. TAP Timing 1 2 3 4 5 6 Test Clock (TCK) t t TH t TMSS t TMSH t TDIS t TDIH TL t CYC Test Mode Select (TMS) Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CARE UNDEFINED TAP AC Switching Characteristics Over the Operating Range[9, 10] Parameter Description Min Max Unit 20 MHz Clock tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency tTH TCK Clock HIGH Time 20 ns tTL TCK Clock LOW Time 20 ns 50 ns Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 10 0 ns ns Setup Times tTMSS TMS Setup to TCK Clock Rise 5 ns tTDIS TDI Setup to TCK Clock Rise 5 ns tCS Capture Setup to TCK Rise 5 ns tTMSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Hold Times Notes 9. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 10. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document #: 001-15143 Rev. *D Page 14 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 2.5V TAP AC Test Conditions Figure 5. 2.5V TAP AC Output Load Equivalent 1.25V Input pulse levels................................................. VSS to 2.5V Input rise and fall time .....................................................1 ns 50Ω Input timing reference levels......................................... 1.25V Output reference levels ................................................ 1.25V TDO Test load termination supply voltage ............................ 1.25V Z O= 50Ω 20pF TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; VDD = 2.5V ±0.125V unless otherwise noted)[11] Parameter Description Test Conditions Min Max Unit VOH1 Output HIGH Voltage IOH = –1.0 mA, VDDQ = 2.5V 1.7 V VOH2 Output HIGH Voltage IOH = –100 μA, VDDQ = 2.5V 2.1 V VOL1 Output LOW Voltage IOL = 1.0 mA, VDDQ = 2.5V 0.4 V VOL2 Output LOW Voltage IOL = 100 μA, VDDQ = 2.5V 0.2 V VIH Input HIGH Voltage VDDQ = 2.5V 1.7 VDD + 0.3 V VIL Input LOW Voltage VDDQ = 2.5V –0.3 0.7 V IX Input Load Current GND ≤ VI ≤ VDDQ –5 5 μA Table 8. Identification Register Definitions CY7C1480BV25 (2M x36) CY7C1482BV25 (4M x 18) CY7C1486BV25 (1M x72) Description 000 000 000 Describes the version number Device Depth (28:24) 01011 01011 01011 Reserved for internal use Architecture/Memory Type(23:18) 000000 000000 000000 Defines memory type and architecture Defines width and density Instruction Field Revision Number (31:29) Bus Width/Density(17:12) 100100 010100 110100 Cypress JEDEC ID Code (11:1) 00000110100 00000110100 00000110100 Enables unique identification of SRAM vendor 1 1 1 Indicates the presence of an ID register ID Register Presence Indicator (0) Table 9. Scan Register Sizes Register Name Bit Size (x36) Bit Size (x18) Bit Size (x72) Instruction 3 3 3 Bypass 1 1 1 ID 32 32 32 Boundary Scan Order – 165FBGA 73 54 - - - 112 Boundary Scan Order – 209BGA Note 11. All voltages refer to VSS (GND). Document #: 001-15143 Rev. *D Page 15 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Table 10. Identification Codes Instruction Code Description EXTEST 000 Captures the IO ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. SAMPLE Z 010 Captures the IO ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the IO ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Table 11. Boundary Scan Exit Order (2M x 36) Bit # 165-Ball ID Bit # 165-Ball ID Bit # 1 2 165-Ball ID Bit # 165-Ball ID C1 21 R3 D1 22 P2 41 L10 61 B8 42 K11 62 A7 3 E1 23 R4 43 J11 63 B7 4 D2 24 P6 44 K10 64 B6 5 E2 25 R6 45 J10 65 A6 6 F1 26 N6 46 H11 66 B5 7 G1 27 P11 47 G11 67 A5 8 F2 28 R8 48 F11 68 A4 9 G2 29 P3 49 E11 69 B4 10 J1 30 P4 50 D10 70 B3 11 K1 31 P8 51 D11 71 A3 12 L1 32 P9 52 C11 72 A2 73 B2 13 J2 33 P10 53 G10 14 M1 34 R9 54 F10 15 N1 35 R10 55 E10 16 K2 36 R11 56 A10 17 L2 37 N11 57 B10 18 M2 38 M11 58 A9 19 R1 39 L11 59 B9 20 R2 40 M10 60 A8 Document #: 001-15143 Rev. *D Page 16 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Boundary Scan Exit Order (4M x 18) Bit # 165-Ball ID Bit # 165-Ball ID Bit # 165-Ball ID 1 D2 19 R8 37 C11 2 E2 20 P3 38 A11 3 F2 21 P4 39 A10 4 G2 22 P8 40 B10 5 J1 23 P9 41 A9 6 K1 24 P10 42 B9 7 L1 25 R9 43 A8 8 M1 26 R10 44 B8 9 N1 27 R11 45 A7 10 R1 28 M10 46 B7 11 R2 29 L10 47 B6 12 R3 30 K10 48 A6 13 P2 31 J10 49 B5 14 R4 32 H11 50 A4 15 P6 33 G11 51 B3 16 R6 34 F11 52 A3 17 N6 35 E11 53 A2 18 P11 36 D11 54 B2 Document #: 001-15143 Rev. *D Page 17 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Boundary Scan Exit Order (1M x 72) Bit # 209-Ball ID Bit # 209-Ball ID Bit # 209-Ball ID Bit # 209-Ball ID 1 A1 29 T1 57 V10 85 C11 2 A2 30 T2 58 U11 86 C10 3 B1 31 U1 59 U10 87 B11 4 B2 32 U2 60 T11 88 B10 5 C1 33 V1 61 T10 89 A11 A10 6 C2 34 V2 62 R11 90 7 D1 35 W1 63 R10 91 A9 8 D2 36 W2 64 P11 92 U8 9 E1 37 T6 65 P10 93 A7 10 E2 38 V3 66 N11 94 A5 11 F1 39 V4 67 N10 95 A6 D6 12 F2 40 U4 68 M11 96 13 G1 41 W5 69 M10 97 B6 14 G2 42 V6 70 L11 98 D7 15 H1 43 W6 71 L10 99 K3 16 H2 44 U3 72 P6 100 A8 17 J1 45 U9 73 J11 101 B4 18 J2 46 V5 74 J10 102 B3 19 L1 47 U5 75 H11 103 C3 20 L2 48 U6 76 H10 104 C4 21 M1 49 W7 77 G11 105 C8 22 M2 50 V7 78 G10 106 C9 23 N1 51 U7 79 F11 107 B9 24 N2 52 V8 80 F10 108 B8 25 P1 53 V9 81 E10 109 A4 26 P2 54 W11 82 E11 110 C6 27 R2 55 W10 83 D11 111 B7 28 R1 56 V11 84 D10 112 A3 Document #: 001-15143 Rev. *D Page 18 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Maximum Ratings DC Input Voltage ................................... –0.5V to VDD + 0.5V Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage........................................... >2001V (MIL-STD-883, Method 3015) Latch Up Current .................................................... >200 mA Ambient Temperature with Power Applied ............................................ –55°C to +125°C Operating Range Supply Voltage on VDD Relative to GND ........–0.3V to +3.6V Supply Voltage on VDDQ Relative to GND.......–0.3V to +VDD Range DC Voltage Applied to Outputs in Tri-State ........................................... –0.5V to VDDQ + 0.5V Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VDD VDDQ 2.5V –5%/+5% 2.5V–5% to VDD Electrical Characteristics Over the Operating Range[12, 13] Parameter Description Test Conditions VDD Power Supply Voltage VDDQ IO Supply Voltage VOH Output HIGH Voltage For 2.5V IO, IOH = –1.0 mA VOL Output LOW Voltage For 2.5V IO, IOL = 1.0 mA For 2.5V IO Min Max Unit 2.375 2.625 V 2.375 VDD V 2.0 V 0.4 V V VIH Input HIGH Voltage[12] For 2.5V IO 1.7 VDD + 0.3V VIL Input LOW Voltage[12] For 2.5V IO –0.3 0.7 V IX Input Leakage Current except ZZ and MODE GND ≤ VI ≤ VDDQ –5 5 μA Input Current of MODE Input = VSS –30 Input = VDD Input Current of ZZ 5 Input = VSS 30 μA 5 μA 4.0-ns cycle, 250 MHz 450 mA 5.0-ns cycle, 200 MHz 450 mA Input = VDD IDD [14] μA μA –5 Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled IOZ μA –5 VDD Operating Supply Current VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC 6.0-ns cycle, 167 MHz 400 mA Automatic CE Power Down Current—TTL Inputs VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX = 1/tCYC 4.0-ns cycle, 250 MHz 200 mA 5.0-ns cycle, 200 MHz 200 mA 6.0-ns cycle, 167 MHz 200 mA ISB2 Automatic CE Power Down Current—CMOS Inputs VDD = Max, Device Deselected, VIN ≤ 0.3V or VIN > VDDQ – 0.3V, f=0 All speeds 120 mA ISB3 Automatic CE Power Down Current—CMOS Inputs VDD = Max, Device Deselected, or VIN ≤ 0.3V or VIN > VDDQ – 0.3V f = fMAX = 1/tCYC 4.0-ns cycle, 250 MHz 200 mA 5.0-ns cycle, 200 MHz 200 mA 6.0-ns cycle, 167 MHz 200 mA Automatic CE Power Down Current—TTL Inputs VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL, f = 0 All speeds 135 mA ISB1 ISB4 Notes 12. Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2).Undershoot: VIL(AC) > –2V (pulse width less than tCYC/2). 13. Power up: assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 14. The operation current is calculated with 50% read cycle and 50% write cycle. Document #: 001-15143 Rev. *D Page 19 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description CADDRESS Address Input Capacitance Test Conditions 100 TQFP Package 165 FBGA Package 209 FBGA Package Unit TA = 25°C, f = 1 MHz, VDD = 2.5V VDDQ = 2.5V 6 6 6 pF 5 5 5 pF 8 8 8 pF CDATA Data Input Capacitance CCTRL Control Input Capacitance CCLK Clock Input Capacitance 6 6 6 pF CIO Input/Output Capacitance 5 5 5 pF Thermal Resistance Tested initially and after any design or process change that may affect these parameters. Parameter Test Conditions 100 TQFP Max 165 FBGA Max 209 FBGA Max Unit Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 24.63 16.3 15.2 °C/W 2.28 2.1 1.7 °C/W Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) AC Test Loads and Waveforms 2.5V IO Test Load R = 1667Ω 2.5V OUTPUT ALL INPUT PULSES VDDQ OUTPUT RL = 50Ω Z0 = 50Ω 10% 90% 10% 90% GND 5 pF R = 1583Ω ≤ 1 ns ≤ 1 ns VL = 1.25V (a) Document #: 001-15143 Rev. *D INCLUDING JIG AND SCOPE (b) (c) Page 20 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Switching Characteristics Over the Operating Range. Timing reference level is 1.25V when VDDQ = 2.5V. Test conditions shown in (a) of “AC Test Loads and Waveforms” on page 20 unless otherwise noted. Parameter tPOWER Description VDD(Typical) to the first access[15] 250 MHz Min Max 200 MHz Min Max 167 MHz Min Max Unit 1 1 1 ms Clock tCYC Clock Cycle Time 4.0 5.0 6.0 ns tCH Clock HIGH 2.0 2.0 2.4 ns tCL Clock LOW 2.0 2.0 2.4 ns Output Times tCO Data Output Valid After CLK Rise tDOH Data Output Hold After CLK Rise 1.3 1.3 1.5 ns tCLZ Clock to Low-Z[16, 17, 18] 1.3 1.3 1.5 ns tCHZ Clock to High-Z[16, 17, 18] 3.0 3.0 3.4 ns tOEV OE LOW to Output Valid 3.0 3.0 3.4 ns tOELZ tOEHZ OE LOW to Output Low-Z[16, 17, 18] OE HIGH to Output High-Z[16, 17, 18] 3.0 0 3.0 0 3.0 3.4 0 3.0 ns ns 3.4 ns Setup Times tAS Address Setup Before CLK Rise 1.4 1.4 1.5 ns tADS ADSC, ADSP Setup Before CLK Rise 1.4 1.4 1.5 ns tADVS ADV Setup Before CLK Rise 1.4 1.4 1.5 ns tWES GW, BWE, BWX Setup Before CLK Rise 1.4 1.4 1.5 ns tDS Data Input Setup Before CLK Rise 1.4 1.4 1.5 ns tCES Chip Enable Setup Before CLK Rise 1.4 1.4 1.5 ns tAH Address Hold After CLK Rise 0.4 0.4 0.5 ns tADH ADSP, ADSC Hold After CLK Rise 0.4 0.4 0.5 ns tADVH ADV Hold After CLK Rise 0.4 0.4 0.5 ns tWEH GW, BWE, BWX Hold After CLK Rise 0.4 0.4 0.5 ns tDH Data Input Hold After CLK Rise 0.4 0.4 0.5 ns tCEH Chip Enable Hold After CLK Rise 0.4 0.4 0.5 ns Hold Times Notes 15. This part has an internal voltage regulator; tPOWER is the time that the power is supplied above VDD(minimum) initially before a read or write operation can be initiated. 16. tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of “AC Test Loads and Waveforms” on page 20. Transition is measured ±200 mV from steady-state voltage. 17. At any possible voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z before Low-Z under the same system conditions. 18. This parameter is sampled and not 100% tested. Document #: 001-15143 Rev. *D Page 21 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Switching Waveforms Timing for the read cycle is shown in Figure 6.[19] Figure 6. Read Cycle Timing t CYC CLK t t ADS CH t CL t ADH ADSP t ADS tADH ADSC t AS tAH A1 ADDRESS A2 t WES A3 Burst continued with new base address tWEH GW, BWE, BWx t CES Deselect cycle tCEH CE t ADVS tADVH ADV ADV suspends burst. OE t OEHZ t CLZ Data Out (Q) High-Z Q(A1) t OEV t CO t OELZ t DOH Q(A2) t CHZ Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) t CO Burst wraps around to its initial state Single READ BURST READ DON’T CARE UNDEFINED Note 19. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH, CE2 is LOW, or CE3 is HIGH. Document #: 001-15143 Rev. *D Page 22 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Switching Waveforms (continued) Timing for the write cycle is shown in Figure 7.[19, 20] Figure 7. Write Cycle Timing t CYC CLK tCH t ADS tCL tADH ADSP t ADS ADSC extends burst tADH t ADS tADH ADSC t AS tAH A1 ADDRESS A2 A3 Byte write signals are ignored for first cycle when ADSP initiates burst t WES tWEH BWE, BW X t WES tWEH GW t CES tCEH CE t t ADVS ADVH ADV ADV suspends burst OE t DS Data In (D) High-Z t OEHZ tDH D(A1) D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) Data Out (Q) BURST READ Single WRITE BURST WRITE DON’T CARE Extended BURST WRITE UNDEFINED Note 20. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW, and BWX LOW. Document #: 001-15143 Rev. *D Page 23 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Switching Waveforms (continued) Timing for the read-write cycle is shown in Figure 8.[19, 21, 22] Figure 8. Read/Write Cycle Timing tCYC CLK tCL tCH t ADS tADH t AS tAH ADSP ADSC ADDRESS A1 A2 A3 A4 A5 A6 t WES tWEH BWE, BW X t CES tCEH CE ADV OE t DS tCO tDH t OELZ Data In (D) High-Z tCLZ Data Out (Q) High-Z Q(A1) Back-to-Back READs tOEHZ D(A5) D(A3) Q(A2) Q(A4) Single WRITE Q(A4+1) Q(A4+2) BURST READ DON’T CARE D(A6) Q(A4+3) Back-to-Back WRITEs UNDEFINED Notes 21. The data bus (Q) remains in high-Z following a write cycle, unless a new read access is initiated by ADSP or ADSC. 22. GW is HIGH. Document #: 001-15143 Rev. *D Page 24 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Switching Waveforms (continued) Timing for ZZ mode is shown in Figure 9.[23, 24] Figure 9. ZZ Mode Timing CLK t ZZ ZZ I t ZZREC t ZZI SUPPLY I DDZZ t RZZI ALL INPUTS (except ZZ) Outputs (Q) DESELECT or READ Only High-Z DON’T CARE Notes 23. Device must be deselected when entering ZZ mode. See “Truth Table” on page 10 for all possible signal conditions to deselect the device. 24. DQs are in high-Z when exiting ZZ sleep mode. Document #: 001-15143 Rev. *D Page 25 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 167 Ordering Code CY7C1480BV25-167AXC Package Diagram Part and Package Type 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Operating Range Commercial CY7C1482BV25-167AXC CY7C1480BV25-167BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1482BV25-167BZC CY7C1480BV25-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1482BV25-167BZXC CY7C1486BV25-167BGC CY7C1486BV25-167BGXC CY7C1480BV25-167AXI 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free lndustrial CY7C1482BV25-167AXI CY7C1480BV25-167BZI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1482BV25-167BZI CY7C1480BV25-167BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1482BV25-167BZXI CY7C1486BV25-167BGI CY7C1486BV25-167BGXI 200 CY7C1480BV25-200AXC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Commercial CY7C1482BV25-200AXC CY7C1480BV25-200BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1482BV25-200BZC CY7C1480BV25-200BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1482BV25-200BZXC CY7C1486BV25-200BGC CY7C1486BV25-200BGXC CY7C1480BV25-200AXI 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free lndustrial CY7C1482BV25-200AXI CY7C1480BV25-200BZI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1482BV25-200BZI CY7C1480BV25-200BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1482BV25-200BZXI CY7C1486BV25-200BGI CY7C1486BV25-200BGXI Document #: 001-15143 Rev. *D 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free Page 26 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Ordering Information (continued) Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 250 Ordering Code CY7C1480BV25-250AXC Package Diagram Part and Package Type 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Operating Range Commercial CY7C1482BV25-250AXC CY7C1480BV25-250BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1482BV25-250BZC CY7C1480BV25-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1482BV25-250BZXC CY7C1486BV25-250BGC CY7C1486BV25-250BGXC CY7C1480BV25-250AXI 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Industrial CY7C1482BV25-250AXI CY7C1480BV25-250BZI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1482BV25-250BZI CY7C1480BV25-250BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free CY7C1482BV25-250BZXI CY7C1486BV25-250BGI CY7C1486BV25-250BGXI Document #: 001-15143 Rev. *D 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free Page 27 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Package Diagrams Figure 10. 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm), 51-85050 16.00±0.20 1.40±0.05 14.00±0.10 100 81 80 1 20.00±0.10 22.00±0.20 0.30±0.08 0.65 TYP. 30 12°±1° (8X) SEE DETAIL A 51 31 50 0.20 MAX. 0.10 1.60 MAX. R 0.08 MIN. 0.20 MAX. 0° MIN. SEATING PLANE STAND-OFF 0.05 MIN. 0.15 MAX. 0.25 NOTE: 1. JEDEC STD REF MS-026 GAUGE PLANE 0°-7° R 0.08 MIN. 0.20 MAX. 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0.60±0.15 0.20 MIN. 1.00 REF. DETAIL Document #: 001-15143 Rev. *D A 51-85050-*B Page 28 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Package Diagrams (continued) Figure 11. 165-Ball FBGA (15 x 17 x 1.4 mm), 51-85165 PIN 1 CORNER BOTTOM VIEW TOP VIEW Ø0.05 M C PIN 1 CORNER Ø0.25 M C A B Ø0.45±0.05(165X) 1 2 3 4 5 6 7 8 9 10 11 11 10 9 8 7 6 5 4 3 2 1 A B B C C 1.00 A D D F F G G H J 14.00 E 17.00±0.10 E H J K L L 7.00 K M M N N P P R R A 1.00 5.00 0.35 0.15 C +0.05 -0.10 0.53±0.05 0.25 C 10.00 B 15.00±0.10 0.15(4X) SEATING PLANE Document #: 001-15143 Rev. *D 1.40 MAX. 0.36 C 51-85165-*A Page 29 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Package Diagrams (continued) Figure 12. 209-Ball FBGA (14 x 22 x 1.76 mm), 51-85167 51-85167-** Document #: 001-15143 Rev. *D Page 30 of 31 [+] Feedback CY7C1480BV25 CY7C1482BV25, CY7C1486BV25 Document History Page Document Title: CY7C1480BV25/CY7C1482BV25/CY7C1486BV25, 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM Document Number: 001-15143 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 1024385 See ECN *A 1562944 See ECN VKN/KKVTMP New Data Sheet VKN/AESA Removed 1.8V IO offering from the data sheet *B 1897447 See ECN VKN/AESA Added footnote 14 related to IDD *C 2082487 See ECN VKN *D 2159486 See ECN VKN/PYRS Converted from preliminary to final Minor Change-Moved to the external web © Cypress Semiconductor Corporation, 2007-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-15143 Rev. *D Revised February 29, 2008 Page 31 of 31 NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback