TOSHIBA TC74HC365AP_07

TC74HC365,366AP/AF
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HC365AP,TC74HC365AF,TC74HC366AP,TC74HC366AF
Hex Bus Buffer
TC74HC365AP/AF
TC74HC366AP/AF
Non-Inverted (3-state)
Inverted (3-state)
TC74HC365AP, TC74HC366AP
The TC74HC365A and TC74HC366A are high speed CMOS
3-STATE BUFFERs fabricated with silicon gate C2MOS
technology.
They achieve the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The TC74HC366A is an inverting type, while the TC74HC365A
is non-inverting.
All six buffers are controlled by the combination of two enable
inputs ( G1 and G2 ); the outputs of these buffers are enabled only
when both G1 and G2 inputs held low, and at the other
combinations, these outputs are disabled to the high impedance
state.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HC365AF, TC74HC366AF
Features
•
High speed: tpd = 9 ns (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
•
High noise immunity: VNIH = VNIL = 28% VCC (min)
•
Output drive capability: 15 LSTTL loads
•
•
Symmetrical output impedance: |IOH| = IOL = 6 mA (min)
∼ tpHL
Balanced propagation delays: tpLH −
•
Wide operating voltage range: VCC (opr) = 2 to 6 V
•
Pin and function compatible with 74LS365/366
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
Pin Assignment
TC74HC365A
TC74HC366A
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TC74HC365,366AP/AF
IEC Logic Symbol
TC74HC365A
TC74HC366A
Truth Table
Inputs
Outputs
G1
G2
An
Yn (365A)
Yn (366A)
L
L
L
L
H
L
L
H
H
L
H
X
X
Z
Z
X
H
X
Z
Z
X: Don’t care
Z: High impedance
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5 to 7
V
DC input voltage
VIN
−0.5 to VCC + 0.5
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±35
mA
DC VCC/ground current
ICC
±75
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
Tstg
−65 to 150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be
applied until 300 mW.
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TC74HC365,366AP/AF
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2 to 6
V
Input voltage
VIN
0 to VCC
V
VOUT
0 to VCC
V
−40 to 85
°C
Output voltage
Operating temperature
Topr
0 to 1000 (VCC = 2.0 V)
Input rise and fall time
0 to 500 (VCC = 4.5 V)
tr, tf
ns
0 to 400 (VCC = 6.0 V)
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Symbol
VOH
VOL
Min
Typ.
Max
Min
Max
2.0
1.50
⎯
⎯
1.50
⎯
4.5
3.15
⎯
⎯
3.15
⎯
6.0
4.20
⎯
⎯
4.20
⎯
2.0
⎯
⎯
0.50
⎯
0.50
4.5
⎯
⎯
1.35
⎯
1.35
6.0
⎯
⎯
1.80
⎯
1.80
2.0
1.9
2.0
⎯
1.9
⎯
4.5
4.4
4.5
⎯
4.4
⎯
6.0
5.9
6.0
⎯
5.9
⎯
IOH = −6 mA
4.5
4.18
4.31
⎯
4.13
⎯
IOH = −7.8 mA
6.0
5.68
5.80
⎯
5.63
⎯
2.0
⎯
0.0
0.1
⎯
0.1
IOL = 20 μA
4.5
⎯
0.0
0.1
⎯
0.1
6.0
⎯
0.0
0.1
⎯
0.1
IOL = 6 mA
4.5
⎯
0.17
0.26
⎯
0.33
IOL = 7.8 mA
6.0
⎯
0.18
0.26
⎯
0.33
6.0
⎯
⎯
±0.5
⎯
±5.0
μA
⎯
VIL
VIN
= VIH or
VIL
VIN
= VIH or
VIL
Unit
VCC
(V)
⎯
VIH
Ta =
−40 to 85°C
Ta = 25°C
Test Condition
IOH = −20 μA
VIN = VIH or VIL
V
V
V
V
3-state output
off-state current
IOZ
Input leakage
current
IIN
VIN = VCC or GND
6.0
⎯
⎯
±0.1
⎯
±1.0
μA
Quiescent supply
current
ICC
VIN = VCC or GND
6.0
⎯
⎯
4.0
⎯
40.0
μA
VOUT = VCC or GND
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TC74HC365,366AP/AF
AC Characteristics (input: tr = tf = 6 ns)
Output transition time
Symbol
CL
(pF)
tTLH
⎯
tTHL
50
50
Propagation delay
time
tpLH
⎯
tpHL
150
50
Output enable time
tpZL
tpZH
RL = 1 kΩ
150
Output disable time
Input capacitance
Output capacitance
Power dissipation
capacitance
Note:
tpLZ
tpHZ
RL = 1 kΩ
Ta =
−40 to 85°C
Ta = 25°C
Test Condition
Characteristics
50
VCC
(V)
Min
Typ.
Max
Min
Max
2.0
⎯
20
60
⎯
75
4.5
⎯
6
12
⎯
15
6.0
⎯
5
10
⎯
13
2.0
⎯
38
90
⎯
115
4.5
⎯
12
18
⎯
23
6.0
⎯
10
15
⎯
20
2.0
⎯
51
130
⎯
165
4.5
⎯
17
26
⎯
33
6.0
⎯
14
22
⎯
28
2.0
⎯
56
130
⎯
165
4.5
⎯
17
26
⎯
33
6.0
⎯
13
22
⎯
28
2.0
⎯
69
170
⎯
215
4.5
⎯
22
34
⎯
44
6.0
⎯
17
29
⎯
37
2.0
⎯
42
130
⎯
165
4.5
⎯
18
26
⎯
33
6.0
⎯
15
22
⎯
28
Unit
ns
ns
ns
ns
CIN
⎯
⎯
5
10
⎯
10
pF
COUT
⎯
⎯
10
⎯
⎯
⎯
pF
⎯
⎯
25
⎯
⎯
⎯
pF
CPD
(Note)
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC/6 (per gate)
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TC74HC365,366AP/AF
Package Dimensions
Weight: 1.00 g (typ.)
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TC74HC365,366AP/AF
Package Dimensions
Weight: 0.18 g (typ.)
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TC74HC365,366AP/AF
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
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that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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