TC74HC373AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC373AP,TC74HC373AF Octal D-Type Latch with 3-State Output The TC74HC373A is a high speed CMOS OCTAL LATCH with 3-STATE OUTPUT fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. These 8-bit D-type latches are controlled by a latch enable input (LE) and an output enable input ( OE ). When the OE input is high, the eight outputs are in a high impedance state. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC74HC373AP TC74HC373AF Features • High speed: tpd = 11 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 15 LSTTL loads • • Symmetrical output impedance: |IOH| = IOL = 6 mA (min) ∼ tpHL Balanced propagation delays: tpLH − • Wide operating voltage range: VCC (opr) = 2 to 6 V • Pin and function compatible with 74LS373 Weight DIP20-P-300-2.54A SOP20-P-300-1.27A : 1.30 g (typ.) : 0.22 g (typ.) Pin Assignment 1 2007-10-01 TC74HC373AP/AF IEC Logic Symbol Truth Table Inputs Output OE LE D Q H X X Z L L X Qn L H L L L H H H X: Don’t care Z: High impedance Qn: Q outputs are latched at the time when the LE input is taken to a low logic level. System Diagram 2 2007-10-01 TC74HC373AP/AF Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 7 V DC input voltage VIN −0.5 to VCC + 0.5 V VOUT −0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±35 mA DC VCC/ground current ICC ±75 mA Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW Storage temperature Tstg −65 to 150 °C DC output voltage Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2 to 6 V Input voltage VIN 0 to VCC V VOUT 0 to VCC V Operating temperature Topr −40 to 85 °C Input rise and fall time tr, tf Output voltage 0 to 1000 (VCC = 2.0 V) 0 to 500 (VCC = 4.5 V) ns 0 to 400 (VCC = 6.0 V) Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 3 2007-10-01 TC74HC373AP/AF Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage Min Typ. Max Min Max 2.0 1.50 ⎯ ⎯ 1.50 ⎯ 4.5 3.15 ⎯ ⎯ 3.15 ⎯ 6.0 4.20 ⎯ ⎯ 4.20 ⎯ 2.0 ⎯ ⎯ 0.50 ⎯ 0.50 4.5 ⎯ ⎯ 1.35 ⎯ 1.35 6.0 ⎯ ⎯ 1.80 ⎯ 1.80 2.0 1.9 2.0 ⎯ 1.9 ⎯ 4.5 4.4 4.5 ⎯ 4.4 ⎯ 6.0 5.9 6.0 ⎯ 5.9 ⎯ IOH = −6 mA 4.5 4.18 4.31 ⎯ 4.13 ⎯ IOH = −7.8 mA 6.0 5.68 5.80 ⎯ 5.63 ⎯ 2.0 ⎯ 0.0 0.1 ⎯ 0.1 4.5 ⎯ 0.0 0.1 ⎯ 0.1 6.0 ⎯ 0.0 0.1 ⎯ 0.1 IOL = 6 mA 4.5 ⎯ 0.17 0.26 ⎯ 0.33 IOL = 7.8 mA 6.0 ⎯ 0.18 0.26 ⎯ 0.33 6.0 ⎯ ⎯ ±0.5 ⎯ ±5.0 μA ⎯ VIL IOH = −20 μA High-level output voltage VOH VIN = VIH or VIL IOL = 20 μA Low-level output voltage VOL Unit VCC (V) ⎯ VIH Ta = −40 to 85°C Ta = 25°C Test Condition Symbol VIN = VIH or VIL VIN = VIH or VIL V V V V 3-state output off-state current IOZ Input leakage current IIN VIN = VCC or GND 6.0 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 6.0 ⎯ ⎯ 4.0 ⎯ 40.0 μA Ta = −40 to 85°C Unit VOUT = VCC or GND Timing Requirements (input: tr = tf = 6 ns) Characteristics Minimum pulse width (LE) Minimum set-up time (Dn) Minimum hold time (Dn) Ta = 25°C Test Condition Symbol ⎯ tW (H) ⎯ ts ⎯ th 4 VCC (V) Typ. Limit Limit 2.0 ⎯ 75 95 4.5 ⎯ 15 19 6.0 ⎯ 13 16 2.0 ⎯ 50 65 4.5 ⎯ 10 13 6.0 ⎯ 9 11 2.0 ⎯ 5 5 4.5 ⎯ 5 5 6.0 ⎯ 5 5 ns ns ns 2007-10-01 TC74HC373AP/AF AC Characteristics (input: tr = tf = 6 ns) Characteristics CL (pF) VCC (V) Output transition time tTLH ⎯ tTHL 50 50 Propagation delay time tpLH (LE-Q) tpHL ⎯ 150 50 Propagation delay time tpLH (D-Q) tpHL ⎯ 150 50 Output enable time tpZL tpZH RL = 1 kΩ 150 Output disable time Input capacitance Output capacitance Power dissipation capacitance Note: tpLZ tpHZ RL = 1 kΩ 50 Ta = −40 to 85°C Ta = 25°C Test Condition Symbol Min Typ. Max Min Max 2.0 ⎯ 20 60 ⎯ 75 4.5 ⎯ 6 12 ⎯ 15 6.0 ⎯ 5 10 ⎯ 13 2.0 ⎯ 42 125 ⎯ 155 4.5 ⎯ 14 25 ⎯ 31 6.0 ⎯ 12 21 ⎯ 26 2.0 ⎯ 57 175 ⎯ 220 4.5 ⎯ 19 35 ⎯ 44 6.0 ⎯ 16 30 ⎯ 37 2.0 ⎯ 42 125 ⎯ 155 4.5 ⎯ 14 25 ⎯ 31 6.0 ⎯ 12 21 ⎯ 26 2.0 ⎯ 57 175 ⎯ 220 4.5 ⎯ 19 35 ⎯ 44 6.0 ⎯ 16 30 ⎯ 37 2.0 ⎯ 39 125 ⎯ 155 4.5 ⎯ 13 25 ⎯ 31 6.0 ⎯ 11 21 ⎯ 26 2.0 ⎯ 54 175 ⎯ 220 4.5 ⎯ 18 35 ⎯ 44 6.0 ⎯ 15 30 ⎯ 37 2.0 ⎯ 30 125 ⎯ 155 4.5 ⎯ 14 25 ⎯ 31 6.0 ⎯ 13 21 ⎯ 26 Unit ns ns ns ns ns CIN ⎯ ⎯ 5 10 ⎯ 10 pF COUT ⎯ ⎯ 10 ⎯ ⎯ ⎯ pF ⎯ ⎯ 38 ⎯ ⎯ ⎯ pF CPD (Note) CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/8 (per latch) And the total CPD when n pcs. of latch operate can be gained by the following equation: CPD (total) = 22 + 16･n 5 2007-10-01 TC74HC373AP/AF Package Dimensions Weight: 1.30 g (typ.) 6 2007-10-01 TC74HC373AP/AF Package Dimensions Weight: 0.22 g (typ.) 7 2007-10-01 TC74HC373AP/AF RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01