CYPRESS CY7C1470V25

CY7C1470V25
CY7C1472V25
CY7C1474V25
72-Mbit(2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
— Available speed grades are 250, 200 and 167 MHz
• Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
• Fully registered (inputs and outputs) for pipelined
operation
• Byte Write capability
• Single 2.5V power supply
• 2.5V/1.8V I/O supply (VDDQ)
• Fast clock-to-output times
— 3.0 ns (for 250-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• CY7C1470V25, CY7C1472V25 available in
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1474V25
available in lead-free and non-lead-free 209 ball FBGA
package
• IEEE 1149.1 JTAG Boundary Scan compatible
• Burst capability—linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous pipelined burst SRAMs
with No Bus Latency™ (NoBL™) logic, respectively. They are
designed to support unlimited true back-to-back Read/Write
operations
with
no
wait
states.
The
CY7C1470V25/CY7C1472V25/CY7C1474V25 are equipped
with the advanced (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of data in systems that require frequent Write/Read
transitions. The CY7C1470V25/CY7C1472V25/CY7C1474V25
are pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle. Write operations are controlled by the
Byte Write Selects (BWa–BWh for CY7C1474V25, BWa–BWd
for CY7C1470V25 and BWa–BWb for CY7C1472V25) and a
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Logic Block Diagram-CY7C1470V25 (2M x 36)
ADDRESS
REGISTER 0
A0, A1, A
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
MODE
CLK
CEN
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
S
E
N
S
E
ADV/LD
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BWa
BWb
BWc
BWd
MEMORY
ARRAY
WRITE
DRIVERS
A
M
P
S
WE
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
E
INPUT
REGISTER 1
OE
CE1
CE2
CE3
ZZ
Cypress Semiconductor Corporation
Document #: 38-05290 Rev. *I
E
O
U
T
P
U
T
D
A
T
A
S
T
E
E
R
I
N
G
INPUT
REGISTER 0
B
U
F
F
E
R
S
DQs
DQPa
DQPb
DQPc
DQPd
E
E
READ LOGIC
SLEEP
CONTROL
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 21, 2006
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
Logic Block Diagram-CY7C1472V25 (4M x 18)
ADDRESS
REGISTER 0
A0, A1, A
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
MODE
CLK
CEN
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
ADV/LD
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BWa
WRITE
DRIVERS
O
U
T
P
U
T
S
E
N
S
E
MEMORY
ARRAY
R
E
G
I
S
T
E
R
S
A
M
P
S
BWb
WE
O
U
T
P
U
T
D
A
T
A
B
U
F
F
E
R
S
S
T
E
E
R
I
N
G
E
E
INPUT
REGISTER 1 E
OE
CE1
CE2
CE3
DQs
DQPa
DQPb
INPUT
REGISTER 0 E
READ LOGIC
Sleep
Control
ZZ
Logic Block Diagram-CY7C1474V25 (1M x 72)
A0, A1, A
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
MODE
CLK
CEN
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
S
E
N
S
E
ADV/LD
BWa
BWb
BWc
BWd
BWe
BWf
BWg
BWh
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
E
O
U
T
P
U
T
B
U
F
F
E
R
S
E
DQs
DQPa
DQPb
DQPc
DQPd
DQPe
DQPf
DQPg
DQPh
WE
INPUT
REGISTER 1 E
OE
CE1
CE2
CE3
ZZ
INPUT
REGISTER 0 E
READ LOGIC
Sleep
Control
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Document #: 38-05290 Rev. *I
250 MHz
200 MHz
167 MHz
Unit
3.0
450
120
3.0
450
120
3.4
400
120
ns
mA
mA
Page 2 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
Pin Configurations
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
CY7C1472V25
(4M × 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
Document #: 38-05290 Rev. *I
A
NC
NC
VDDQ
VSS
NC
DQPa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
NC
VSS
VDDQ
NC
NC
NC
A
A
A
A
A
A
A
A
A
VSS
VDD
NC(288)
NC(144)
A
A
A
A
A
A
A
A
A
VSS
VDD
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
NC
DQPb
NC
DQb
NC
DQb
VDDQ VDDQ
VSS
VSS
NC
DQb
DQb
NC
DQb
DQb
DQb
DQb
VSS
VSS
VDDQ VDDQ
DQb
DQb
DQb
DQb
NC
VSS
VDD
NC
NC
VDD
VSS
ZZ
DQb
DQa
DQa
DQb
VDDQ VDDQ
VSS
VSS
DQa
DQb
DQa
DQb
DQa DQPb
DQa
NC
VSS
VSS
VDDQ VDDQ
NC
DQa
DQa
NC
DQPa
NC
MODE
A
A
A
A
A1
A0
CY7C1470V25
(2M × 36)
NC(288)
NC(144)
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
DQPd
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
DQPc
DQc
DQc
VDDQ
A
A
A
A
CE1
CE2
NC
NC
BWb
BWa
CE3
VDD
VSS
CLK
WE
CEN
OE
ADV/LD
A
A
A
A
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE1
CE2
BWd
BWc
BWb
BWa
CE3
VDD
VSS
CLK
WE
CEN
OE
ADV/LD
A
A
100-pin TQFP Pinout
Page 3 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
Pin Configurations (continued)
165-ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1470V25 (2M x 36)
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/576M
A
CE1
BWc
BWb
CE3
ADV/LD
A
A
NC
BWa
VSS
CLK
CEN
WE
OE
A
A
NC
VSS
VSS
VSS
VDD
VDDQ
VSS
VSS
VSS
VDDQ
NC
DQb
DQPb
DQb
R
NC/1G
A
CE2
DQPc
DQc
NC
DQc
VDDQ
VDDQ
BWd
VSS
VDD
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
DQc
NC
DQd
DQc
NC
DQd
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
DQb
NC
DQa
DQb
ZZ
DQa
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
DQd
DQPd
DQd
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQa
NC
DQa
DQPa
NC/144M
A
A
A
TDI
A1
TDO
A
A
A
NC/288M
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
8
9
10
11
A
A
A
CY7C1472V25 (4M x 18)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
NC/576M
A
CE1
BWb
NC
NC
CE3
CEN
ADV/LD
BWa
CLK
VSS
VSS
WE
VSS
VSS
OE
VSS
NC/1G
A
CE2
NC
NC
NC
DQb
VDDQ
VDDQ
VSS
VDD
VSS
VSS
7
A
A
NC
VDD
VDDQ
VDDQ
NC
NC
DQPa
DQa
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
NC
NC
DQb
DQb
NC
NC
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
NC
NC
DQa
DQa
ZZ
NC
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DQb
DQPb
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQa
NC
NC
NC
NC/144M
A
A
A
TDI
A1
TDO
A
A
A
MODE
A
A
A
TMS
A0
TCK
A
A
A
Document #: 38-05290 Rev. *I
NC/288M
A
Page 4 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
Pin Configurations (continued)
209-ball FBGA (14 x 22 x 1.76 mm) Pinout
CY7C1474V25 (1M x 72)
1
2
3
4
5
6
7
8
9
10
11
A
DQg
DQg
A
CE2
A
ADV/LD
A
CE3
A
DQb
DQb
B
DQg
DQg
BWSc
BWSg
NC
WE
A
BWSb
BWSf
DQb
DQb
C
DQg
DQg
BWSh
BWSd
NC/576M
CE1
NC
BWSe
BWSa
DQb
DQb
D
DQg
DQg
VSS
NC
NC/1G
OE
NC
NC
VSS
DQb
DQb
E
DQPg
DQPc
VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
DQPf
DQPb
F
DQc
DQc
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQf
DQf
G
DQc
DQc
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQf
DQf
H
DQc
DQc
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQf
DQf
VDDQ
DQf
DQf
J
DQc
DQc
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
K
NC
NC
CLK
NC
VSS
CEN
VSS
NC
NC
NC
NC
L
DQh
DQh
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQa
DQa
M
DQh
DQh
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQa
DQa
NC
VDD
VDDQ
VDDQ
DQa
DQa
N
DQh
DQh
VDDQ
VDDQ
VDD
P
DQh
DQh
VSS
VSS
VSS
ZZ
VSS
VSS
VSS
DQa
DQa
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
DQPa
DQPe
R
DQPd
DQPh
VDDQ
T
DQd
DQd
VSS
NC
NC
MODE
NC
NC
VSS
DQe
DQe
A
A
A
A
NC/288M
DQe
DQe
U
DQd
DQd
NC/144M
A
V
DQd
DQd
A
A
A
A1
A
A
A
DQe
DQe
W
DQd
DQd
TMS
TDI
A
A0
A
TDO
TCK
DQe
DQe
Pin Definitions
I/O Type
Pin Description
A0
A1
A
Pin Name
InputSynchronous
Address Inputs used to select one of the address locations. Sampled at the rising edge of
the CLK.
BWa
BWb
BWc
BWd
BWe
BWf
BWg
BWh
InputSynchronous
Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the SRAM.
Sampled on the rising edge of CLK. BWa controls DQa and DQPa, BWb controls DQb and DQPb,
BWc controls DQc and DQPc, BWd controls DQd and DQPd, BWe controls DQe and DQPe, BWf
controls DQf and DQPf, BWg controls DQg and DQPg, BWh controls DQh and DQPh.
WE
InputSynchronous
Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This
signal must be asserted LOW to initiate a write sequence.
Document #: 38-05290 Rev. *I
Page 5 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
Pin Definitions (continued)
Pin Name
I/O Type
Pin Description
InputSynchronous
Advance/Load Input used to advance the on-chip address counter or load a new address.
When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a
new address can be loaded into the device for an access. After being deselected, ADV/LD should
be driven LOW in order to load a new address.
CLK
InputClock
Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN.
CLK is only recognized if CEN is active LOW.
CE1
InputSynchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE2 and CE3 to select/deselect the device.
CE2
InputSynchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with
CE1 and CE3 to select/deselect the device.
CE3
InputSynchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE1 and CE2 to select/deselect the device.
OE
InputAsynchronous
Output Enable, active LOW. Combined with the synchronous logic block inside the device to
control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs.
When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during
the data portion of a write sequence, during the first clock when emerging from a deselected state
and when the device has been deselected.
CEN
InputSynchronous
Clock Enable Input, active LOW. When asserted LOW the clock signal is recognized by the
SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not
deselect the device, CEN can be used to extend the previous cycle when required.
DQs
I/OSynchronous
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by A[18:0] during the previous clock rise of the read cycle. The direction of the pins is
controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave
as outputs. When HIGH, DQa–DQh are placed in a tri-state condition. The outputs are automatically tri-stated during the data portion of a write sequence, during the first clock when emerging
from a deselected state, and when the device is deselected, regardless of the state of OE.
DQPX
I/OSynchronous
Bidirectional Data Parity I/O lines. Functionally, these signals are identical to DQ[71:0]. During
write sequences, DQPa is controlled by BWa, DQPb is controlled by BWb, DQPc is controlled by
BWc, and DQPd is controlled by BWd, DQPe is controlled by BWe, DQPf is controlled by BWf,
DQPg is controlled by BWg, DQPh is controlled by BWh.
MODE
Input Strap Pin
Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order.
Pulled LOW selects the linear burst order. MODE should not change states during operation.
When left floating MODE will default HIGH, to an interleaved burst order.
ADV/LD
TDO
JTAG Serial
Output
Synchronous
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.
TDI
JTAG Serial Input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK.
Synchronous
TMS
Test Mode Select This pin controls the Test Access Port state machine. Sampled on the rising edge of TCK.
Synchronous
TCK
JTAG Clock
VDD
Power Supply
VDDQ
Clock input to the JTAG circuitry.
Power supply inputs to the core of the device.
I/O Power Supply Power supply for the I/O circuitry.
VSS
Ground
NC
–
No connects. This pin is not connected to the die.
NC(144M,
288M,
576M, 1G)
–
These pins are not connected. They will be used for expansion to the 144M, 288M, 576M and
1G densities.
InputAsynchronous
ZZ “Sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition
with data integrity preserved. For normal operation, this pin has to be LOW or left floating.
ZZ pin has an internal pull-down.
ZZ
Document #: 38-05290 Rev. *I
Ground for the device. Should be connected to ground of the system.
Page 6 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
Functional Overview
The
CY7C1470V25/CY7C1472V25/CY7C1474V25
are
synchronous-pipelined Burst NoBL SRAMs designed specifically to eliminate wait states during Write/Read transitions. All
synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock signal is qualified with
the Clock Enable input signal (CEN). If CEN is HIGH, the clock
signal is not recognized and all internal states are maintained.
All synchronous operations are qualified with CEN. All data
outputs pass through output registers controlled by the rising
edge of the clock. Maximum access delay from the clock rise
(tCO) is 3.0 ns (250-MHz device).
Accesses can be initiated by asserting all three Chip Enables
(CE1, CE2, CE3) active at the rising edge of the clock. If Clock
Enable (CEN) is active LOW and ADV/LD is asserted LOW,
the address presented to the device will be latched. The
access can either be a Read or Write operation, depending on
the status of the Write Enable (WE). BW[x] can be used to
conduct Byte Write operations.
Write operations are qualified by the Write Enable (WE). All
writes are simplified with on-chip synchronous self-timed write
circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) simplify depth expansion.
All operations (Reads, Writes, and Deselects) are pipelined.
ADV/LD should be driven LOW once the device has been
deselected in order to load a new address for the next
operation.
Single Read Accesses
A Read access is initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are ALL asserted active, (3) the Write Enable input
signal WE is deasserted HIGH, and (4) ADV/LD is asserted
LOW. The address presented to the address inputs is latched
into the Address Register and presented to the memory core
and control logic. The control logic determines that a Read
access is in progress and allows the requested data to
propagate to the input of the output register. At the rising edge
of the next clock the requested data is allowed to propagate
through the output register and onto the data bus within 2.6 ns
(250-MHz device) provided OE is active LOW. After the first
clock of the Read access the output buffers are controlled by
OE and the internal control logic. OE must be driven LOW in
order for the device to drive out the requested data. During the
second clock, a subsequent operation (Read/Write/Deselect)
can be initiated. Deselecting the device is also pipelined.
Therefore, when the SRAM is deselected at clock rise by one
of the chip enable signals, its output will tri-state following the
next clock rise.
Burst Read Accesses
The CY7C1470V25/CY7C1472V25/CY7C1474V25 have an
on-chip burst counter that allows the user the ability to supply
a single address and conduct up to four Reads without
reasserting the address inputs. ADV/LD must be driven LOW
in order to load a new address into the SRAM, as described in
the Single Read Access section above. The sequence of the
burst counter is determined by the MODE input signal. A LOW
input on MODE selects a linear burst mode, a HIGH selects an
interleaved burst sequence. Both burst counters use A0 and
A1 in the burst sequence, and will wrap-around when incremented sufficiently. A HIGH input on ADV/LD will increment
Document #: 38-05290 Rev. *I
the internal burst counter regardless of the state of chip
enables inputs or WE. WE is latched at the beginning of a burst
cycle. Therefore, the type of access (Read or Write) is
maintained throughout the burst sequence.
Single Write Accesses
Write accesses are initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are ALL asserted active, and (3) the Write signal WE
is asserted LOW. The address presented to the address inputs
is loaded into the Address Register. The Write signals are
latched into the Control Logic block.
On the subsequent clock rise the data lines are automatically
tri-stated regardless of the state of the OE input signal. This
allows the external logic to present the data on DQ and DQP
(DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h
for
CY7C1474V25,
DQa,b,c,d/DQPa,b,c,d for CY7C1470V25 and DQa,b/DQPa,b for
CY7C1472V25). In addition, the address for the subsequent
access (Read/Write/Deselect) is latched into the Address
Register (provided the appropriate control signals are
asserted).
On the next clock rise the data presented to DQ and DQP
for
CY7C1474V25,
(DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h
DQa,b,c,d/DQPa,b,c,d for CY7C1470V25 & DQa,b/DQPa,b for
CY7C1472V25) (or a subset for Byte Write operations, see
Write Cycle Description table for details) inputs is latched into
the device and the Write is complete.
The data written during the Write operation is controlled by BW
(BWa,b,c,d,e,f,g,h
for
CY7C1474V25,
BWa,b,c,d
for
CY7C1470V25 and BWa,b for CY7C1472V25) signals. The
CY7C1470V25/CY7C1472V25/CY7C1474V25 provides Byte
Write capability that is described in the Write Cycle Description
table. Asserting the Write Enable input (WE) with the selected
Byte Write Select (BW) input will selectively write to only the
desired bytes. Bytes not selected during a Byte Write
operation will remain unaltered. A synchronous self-timed
write mechanism has been provided to simplify the Write
operations. Byte Write capability has been included in order to
greatly simplify Read/Modify/Write sequences, which can be
reduced to simple Byte Write operations.
Because the CY7C1470V25/CY7C1472V25/CY7C1474V25
are common I/O devices, data should not be driven into the
device while the outputs are active. The Output Enable (OE)
can be deasserted HIGH before presenting data to the DQ and
DQP (DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h for CY7C1474V25,
DQa,b,c,d/DQPa,b,c,d for CY7C1470V25 and DQa,b/DQPa,b for
CY7C1472V25) inputs. Doing so will tri-state the output
drivers. As a safety precaution, DQ and DQP
(DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h
for
CY7C1474V25,
DQa,b,c,d/DQPa,b,c,d for CY7C1470V25 and DQa,b/DQPa,b for
CY7C1472V25) are automatically tri-stated during the data
portion of a Write cycle, regardless of the state of OE.
Burst Write Accesses
The CY7C1470V25/CY7C1472V25/CY7C1474V25 has an
on-chip burst counter that allows the user the ability to supply
a single address and conduct up to four Write operations
without reasserting the address inputs. ADV/LD must be
driven LOW in order to load the initial address, as described
in the Single Write Access section above. When ADV/LD is
driven HIGH on the subsequent clock rise, the Chip Enables
(CE1, CE2, and CE3) and WE inputs are ignored and the burst
counter is incremented. The correct BW (BWa,b,c,d,e,f,g,h for
Page 7 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
CY7C1474V25, BWa,b,c,d for CY7C1470V25 and BWa,b for
CY7C1472V25) inputs must be driven in each cycle of the
burst write in order to write the correct bytes of data.
Linear Burst Address Table (MODE = GND)
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, and CE3, must remain inactive
for the duration of tZZREC after the ZZ input returns LOW.
First
Address
Second
Address
Third
Address
Fourth
Address
A1,A0
A1,A0
A1,A0
A1,A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1,A0
00
01
10
11
Second
Address
A1,A0
01
00
11
10
Third
Address
A1,A0
10
11
00
01
Fourth
Address
A1,A0
11
10
01
00
ZZ Mode Electrical Characteristics
Parameter
Description
IDDZZ
Sleep mode standby current
Test Conditions
Min.
ZZ > VDD − 0.2V
tZZS
Device operation to ZZ
ZZ > VDD − 0.2V
tZZREC
ZZ recovery time
ZZ < 0.2V
tZZI
ZZ active to sleep current
This parameter is sampled
tRZZI
ZZ Inactive to exit sleep current
This parameter is sampled
Max.
Unit
120
mA
2tCYC
ns
2tCYC
ns
2tCYC
ns
0
ns
Truth Table [1, 2, 3, 4, 5, 6, 7]
Address
Used
CE
Deselect Cycle
None
H
L
L
X
X
X
L
L-H
Tri-State
Continue Deselect Cycle
None
X
L
H
X
X
X
L
L-H
Tri-State
Read Cycle (Begin Burst)
External
L
L
L
H
X
L
L
L-H
Data Out (Q)
Next
X
L
H
X
X
L
L
L-H
Data Out (Q)
External
L
L
L
H
X
H
L
L-H
Tri-State
Next
X
L
H
X
X
H
L
L-H
Tri-State
Operation
Read Cycle (Continue Burst)
NOP/Dummy Read (Begin Burst)
Dummy Read (Continue Burst)
Write Cycle (Begin Burst)
ZZ
ADV/LD WE
BWx
OE
CEN
CLK
DQ
External
L
L
L
L
L
X
L
L-H
Data In (D)
Write Cycle (Continue Burst)
Next
X
L
H
X
L
X
L
L-H
Data In (D)
NOP/Write Abort (Begin Burst)
None
L
L
L
L
H
X
L
L-H
Tri-State
Write Abort (Continue Burst)
Next
X
L
H
X
H
X
L
L-H
Tri-State
Ignore Clock Edge (Stall)
Sleep Mode
Current
X
L
X
X
X
X
H
L-H
–
None
X
H
X
X
X
X
X
X
Tri-State
Notes:
1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for ALL Chip Enables active. BWx = L signifies at least one Byte Write Select is active, BWx = Valid
signifies that the desired Byte Write Selects are asserted, see Write Cycle Description table for details.
2. Write is defined by WE and BW[a:d]. See Write Cycle Description table for details.
3. When a Write cycle is detected, all I/Os are tri-stated, even during Byte Writes.
4. The DQ and DQP pins are controlled by the current cycle and the OE signal.
5. CEN = H inserts wait states.
6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles.During a Read cycle DQs and DQP[a:d] = Tri-state when
OE is inactive or when the device is deselected, and DQs = data when OE is active.
Document #: 38-05290 Rev. *I
Page 8 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
Partial Write Cycle Description[1, 2, 3, 8]
Function (CY7C1470V25)
WE
BWd
BWc
BWb
BWa
Read
H
X
X
X
X
Write – No bytes written
L
H
H
H
H
Write Byte a – (DQa and DQPa)
L
H
H
H
L
Write Byte b – (DQb and DQPb)
L
H
H
L
H
Write Bytes b, a
L
H
H
L
L
Write Byte c – (DQc and DQPc)
L
H
L
H
H
Write Bytes c, a
L
H
L
H
L
Write Bytes c, b
L
H
LL
L
H
Write Bytes c, b, a
L
H
L
L
L
Write Byte d – (DQd and DQPd)
L
L
H
H
H
Write Bytes d, a
L
L
H
H
L
Write Bytes d, b
L
L
H
L
H
Write Bytes d, b, a
L
L
H
L
L
Write Bytes d, c
L
L
L
H
H
Write Bytes d, c, a
L
L
L
H
L
Write Bytes d, c, b
L
L
L
L
H
Write All Bytes
L
L
L
L
L
Function (CY7C1472V25)
WE
BWb
BWa
Read
H
x
x
Write – No Bytes Written
L
H
H
Write Byte a – (DQa and DQPa)
L
H
L
Write Byte b – (DQb and DQPb)
L
L
H
Write Both Bytes
L
L
L
Function (CY7C1474V25)
WE
BWx
Read
H
x
Write – No Bytes Written
L
H
Write Byte X − (DQx and DQPx)
L
L
Write All Bytes
L
All BW = L
Note:
8. Table only lists a partial listing of the Byte Write combinations. Any combination of BW[a:d] is valid. Appropriate Write will be done based on which Byte Write is
active.
Document #: 38-05290 Rev. *I
Page 9 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
IEEE 1149.1 Serial Boundary Scan (JTAG)
Test MODE SELECT (TMS)
The CY7C1470V25/CY7C1472V25/CY7C1474V25 incorporates a serial boundary scan test access port (TAP). This port
operates in accordance with IEEE Standard 1149.1-1990 but
does not have the set of functions required for full 1149.1
compliance. These functions from the IEEE specification are
excluded because their inclusion places an added delay in the
critical speed path of the SRAM. Note that the TAP controller
functions in a manner that does not conflict with the operation
of other devices using 1149.1 fully compliant TAPs. The TAP
operates using JEDEC-standard 2.5V or 1.8V I/O logic levels.
The CY7C1470V25/CY7C1472V25/CY7C1474V25 contains
a TAP controller, instruction register, boundary scan register,
bypass register, and ID register.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should be
left unconnected. Upon power-up, the device will come up in
a reset state which will not interfere with the operation of the
device.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this ball unconnected if the TAP is not used. The ball is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) of any register.
(See Tap Controller Block Diagram.)
Test Data-Out (TDO)
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See Tap Controller State Diagram.)
TAP Controller Block Diagram
TAP Controller State Diagram
1
0
Bypass Register
TEST-LOGIC
RESET
2 1 0
0
0
RUN-TEST/
IDLE
1
SELECT
DR-SCAN
1
SELECT
IR-SCAN
0
1
1
CAPTURE-DR
0
TDO
x . . . . . 2 1 0
SHIFT-IR
0
Boundary Scan Register
1
EXIT1-DR
1
EXIT1-IR
0
1
TCK
0
PAUSE-DR
0
PAUSE-IR
1
0
TMS
TAP CONTROLLER
1
EXIT2-DR
0
EXIT2-IR
1
Performing a TAP Reset
1
UPDATE-DR
0
UPDATE-IR
1
0
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Document #: 38-05290 Rev. *I
Selection
Circuitry
Identification Register
CAPTURE-IR
1
Instruction Register
31 30 29 . . . 2 1 0
0
SHIFT-DR
1
TDI
Selection
Circuitry
0
0
0
1
A RESET is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. This RESET does not affect the operation
of the SRAM and may be performed while the SRAM is
operating.
At power-up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
TAP Registers
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Page 10 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the Tap Controller Block
Diagram. Upon power-up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board-level serial test data path.
Bypass Register
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
EXTEST
EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in this SRAM TAP controller,
and therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-0 instruction.
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is one difference between
the two instructions. Unlike the SAMPLE/PRELOAD
instruction, EXTEST places the SRAM outputs in a High-Z
state.
Boundary Scan Register
IDCODE
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM.
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used
to capture the contents of the I/O ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
TAP Instruction Set
Overview
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Codes table. Three of these instructions are listed
as RESERVED and should not be used. The other five instructions are described in detail below.
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the I/O
buffers. The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of
SAMPLE/PRELOAD; rather, it performs a capture of the I/O
ring when these instructions are executed.
Document #: 38-05290 Rev. *I
The IDCODE instruction is loaded into the instruction register
upon power-up or whenever the TAP controller is given a test
logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so
the device TAP controller is not fully 1149.1 compliant.
When the SAMPLE/PRELOAD instruction is loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and bidirectional balls
is captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture set-up plus
hold time (tCS plus tCH).
The SRAM clock input might not be captured correctly if there
is no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
Page 11 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
BYPASS
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction will have the
same effect as the Pause-DR command.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
1
2
Test Clock
(TCK)
3
t TH
t TMSS
t TMSH
t TDIS
t TDIH
t
TL
4
5
6
t CYC
Test Mode Select
(TMS)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics Over the Operating Range[9, 10]
Parameter
Description
Min.
Max.
Unit
20
MHz
Clock
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH time
20
ns
tTL
TCK Clock LOW time
20
ns
50
ns
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
ns
0
ns
Set-up Times
tTMSS
TMS Set-up to TCK Clock Rise
5
ns
tTDIS
TDI Set-up to TCK Clock Rise
5
ns
tCS
Capture Set-up to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Hold Times
Notes:
9. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
10. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document #: 38-05290 Rev. *I
Page 12 of 28
[+] Feedback
CY7C1470V25
CY7C1472V25
CY7C1474V25
2.5V TAP AC Test Conditions
1.8V TAP AC Test Conditions
Input pulse levels ................................................ VSS to 2.5V
Input pulse levels..................................... 0.2V to VDDQ – 0.2
Input rise and fall time..................................................... 1 ns
Input rise and fall time .....................................................1 ns
Input timing reference levels .........................................1.25V
Input timing reference levels........................................... 0.9V
Output reference levels.................................................1.25V
Output reference levels .................................................. 0.9V
Test load termination supply voltage.............................1.25V
Test load termination supply voltage .............................. 0.9V
2.5V TAP AC Output Load Equivalent
1.8V TAP AC Output Load Equivalent
1.25V
0.9V
50Ω
50Ω
TDO
TDO
Z O= 50Ω
Z O= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 2.5V ±0.125V unless otherwise noted)[11]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH1
Output HIGH Voltage
IOH = –1.0 mA
VDDQ = 2.5V
1.7
V
VOH2
Output HIGH Voltage
IOH = –100 µA
VDDQ = 2.5V
2.1
V
VDDQ = 1.8V
1.6
VOL1
Output LOW Voltage
IOL = 1.0 mA
VDDQ = 2.5V
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
VDDQ = 2.5V
0.2
V
VDDQ = 1.8V
0.2
V
VIH
VIL
IX
Input HIGH Voltage
Input LOW Voltage
VDDQ = 2.5V
1.7
VDD + 0.3
V
VDDQ = 1.8V
1.26
VDD + 0.3
V
VDDQ = 2.5V
–0.3
0.7
V
VDDQ = 1.8V
–0.3
0.36
V
–5
5
µA
GND ≤ VI ≤ VDDQ
Input Load Current
V
Identification Register Definitions
Instruction Field
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type(23:18)
Bus Width/Density(17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
CY7C1470V25
(2M x 36)
CY7C1472V25
(4M x 18)
CY7C1474V25
(1M x 72)
000
000
000
01011
01011
01011
001000
001000
001000
100100
010100
110100
00000110100
00000110100
00000110100
1
1
1
Description
Describes the version number
Reserved for internal use
Defines memory type and architecture
Defines width and density
Allows unique identification of
SRAM vendor
Indicates the presence of an ID
register
Note:
11. All voltages referenced to VSS (GND).
Document #: 38-05290 Rev. *I
Page 13 of 28
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Scan Register Sizes
Register Name
Bit Size (x36)
Bit Size (x18)
Bit Size (x72)
Instruction
3
3
3
Bypass
1
1
1
ID
32
32
32
Boundary Scan Order–165FBGA
71
52
–
Boundary Scan Order–209BGA
–
–
110
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operations.
SAMPLE Z
010
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload function
and is therefore not 1149.1-compliant.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM operations.
Document #: 38-05290 Rev. *I
Page 14 of 28
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Boundary Scan Exit Order (2M x 36)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
C1
21
R3
41
J11
61
B7
2
D1
22
P2
42
K10
62
B6
3
E1
23
R4
43
J10
63
A6
4
D2
24
P6
44
H11
64
B5
5
E2
25
R6
45
G11
65
A5
6
F1
26
R8
46
F11
66
A4
7
G1
27
P3
47
E11
67
B4
8
F2
28
P4
48
D10
68
B3
9
G2
29
P8
49
D11
69
A3
10
J1
30
P9
50
C11
70
A2
11
K1
31
P10
51
G10
71
B2
12
L1
32
R9
52
F10
13
J2
33
R10
53
E10
14
M1
34
R11
54
A9
15
N1
35
N11
55
B9
16
K2
36
M11
56
A10
17
L2
37
L11
57
B10
18
M2
38
M10
58
A8
19
R1
39
L10
59
B8
20
R2
40
K11
60
A7
165-Ball ID
Bit #
165-Ball ID
Boundary Scan Exit Order (4M x 18)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
1
D2
14
R4
27
L10
40
B10
2
E2
15
P6
28
K10
41
A8
3
F2
16
R6
29
J10
42
B8
4
G2
17
R8
30
H11
43
A7
5
J1
18
P3
31
G11
44
B7
6
K1
19
P4
32
F11
45
B6
7
L1
20
P8
33
E11
46
A6
8
M1
21
P9
34
D11
47
B5
9
N1
22
P10
35
C11
48
A4
10
R1
23
R9
36
A11
49
B3
11
R2
24
R10
37
A9
50
A3
12
R3
25
R11
38
B9
51
A2
13
P2
26
M10
39
A10
52
B2
Document #: 38-05290 Rev. *I
Page 15 of 28
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Boundary Scan Exit Order (1M x 72)
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
1
A1
29
T1
57
U10
85
B11
2
A2
30
T2
58
T11
86
B10
3
B1
31
U1
59
T10
87
A11
4
B2
32
U2
60
R11
88
A10
5
C1
33
V1
61
R10
89
A7
6
C2
34
V2
62
P11
90
A5
7
D1
35
W1
63
P10
91
A9
8
D2
36
W2
64
N11
92
U8
9
E1
37
T6
65
N10
93
A6
10
E2
38
V3
66
M11
94
D6
11
F1
39
V4
67
M10
95
K6
12
F2
40
U4
68
L11
96
B6
13
G1
41
W5
69
L10
97
K3
14
G2
42
V6
70
P6
98
A8
15
H1
43
W6
71
J11
99
B4
16
H2
44
V5
72
J10
100
B3
17
J1
45
U5
73
H11
101
C3
18
J2
46
U6
74
H10
102
C4
19
L1
47
W7
75
G11
103
C8
20
L2
48
V7
76
G10
104
C9
21
M1
49
U7
77
F11
105
B9
22
M2
50
V8
78
F10
106
B8
23
N1
51
V9
79
E10
107
A4
24
N2
52
W11
80
E11
108
C6
25
P1
53
W10
81
D11
109
B7
110
A3
26
P2
54
V11
82
D10
27
R2
55
V10
83
C11
28
R1
56
U11
84
C10
Document #: 38-05290 Rev. *I
Page 16 of 28
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Supply Voltage on VDD Relative to GND........ –0.5V to +3.6V
Range
Ambient
Temperature
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
Commercial
0°C to +70°C
DC to Outputs in Tri-State ................... –0.5V to VDDQ + 0.5V
Industrial
VDD
VDDQ
2.5V –5%/+5% 1.7V to VDD
–40°C to +85°C
DC Input Voltage....................................–0.5V to VDD + 0.5V
Electrical Characteristics Over the Operating Range[12, 13]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VDD
Power Supply Voltage
2.375
2.625
V
VDDQ
I/O Supply Voltage
for 2.5V I/O
2.375
VDD
V
for 1.8V I/O
1.7
1.9
V
VOH
Output HIGH Voltage
for 2.5V I/O, IOH= −1.0 mA
2.0
for 1.8V I/O, IOH = –100 µA
1.6
VOL
Output LOW Voltage
for 2.5V I/O, IOL= 1.0 mA
VIH
Input HIGH Voltage[12]
for 2.5V I/O
VIL
Input LOW Voltage[12]
for 1.8V I/O
IX
Input Leakage Current
except ZZ and MODE
GND ≤ VI ≤ VDDQ
for 1.8V I/O, IOL= 100 µA
0.2
V
V
for 1.8V I/O
1.26
VDD + 0.3V
V
for 2.5V I/O
–0.3
0.7
V
–0.3
0.36
V
–5
5
µA
5
Input = VSS
µA
µA
–5
30
µA
5
µA
4.0-ns cycle, 250 MHz
450
mA
5.0-ns cycle, 200 MHz
450
mA
Input = VDD
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
µA
–30
IOZ
Automatic CE
Power-down
Current—TTL Inputs
V
VDD + 0.3V
Input = VDD
ISB1
V
0.4
1.7
Input Current of MODE Input = VSS
Input Current of ZZ
V
–5
6.0-ns cycle, 167 MHz
400
mA
Max. VDD, Device Deselected, 4.0-ns cycle, 250MHz
VIN ≥ VIH or VIN ≤ VIL,
5.0-ns cycle, 200 MHz
f = fMAX = 1/tCYC
6.0-ns cycle, 167 MHz
200
mA
200
mA
200
mA
ISB2
Automatic CE
Max. VDD, Device Deselected, All speed grades
Power-down
VIN ≤ 0.3V or
Current—CMOS Inputs VIN > VDDQ − 0.3V, f = 0
120
mA
ISB3
Automatic CE
Max. VDD, Device Deselected, 4.0-ns cycle, 250 MHz
Power-down
VIN ≤ 0.3V or
5.0-ns cycle, 200 MHz
Current—CMOS Inputs VIN > VDDQ − 0.3V,
6.0-ns cycle, 167 MHz
f = fMAX = 1/tCYC
200
mA
200
mA
200
mA
Automatic CE
Power-down
Current—TTL Inputs
135
mA
ISB4
Max. VDD, Device Deselected, All speed grades
VIN ≥ VIH or VIN ≤ VIL, f = 0
Notes:
12. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).
13. TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05290 Rev. *I
Page 17 of 28
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Capacitance[14]
Parameter
Description
Test Conditions
CADDRESS
Address Input Capacitance
CDATA
Data Input Capacitance
CCTRL
Control Input Capacitance
CCLK
Clock Input Capacitance
CI/O
Input/Output Capacitance
100 TQFP
Max.
TA = 25°C, f = 1 MHz,
VDD = 2.5V
VDDQ = 2.5V
165 FBGA 209 FBGA
Max.
Max.
Unit
6
6
6
pF
5
5
5
pF
8
8
8
pF
6
6
6
pF
5
5
5
pF
Thermal Resistance[14]
Parameter
ΘJA
ΘJC
Description
Test Conditions
Thermal Resistance Test conditions follow standard
(Junction to Ambient) test methods and procedures for
Thermal Resistance measuring thermal impedance,
per EIA/JESD51.
(Junction to Case)
100 TQFP
Package
165 FBGA
Package
209 FBGA
Package
Unit
24.63
16.3
15.2
°C/W
2.28
2.1
1.7
°C/W
AC Test Loads and Waveforms
2.5V I/O Test Load
R = 1667Ω
2.5V
OUTPUT
Z0 = 50Ω
10%
R = 1538Ω
≤ 1 ns
≤ 1 ns
VL = 1.25V
INCLUDING
JIG AND
SCOPE
90%
10%
90%
GND
5 pF
(a)
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50Ω
(c)
(b)
1.8V I/O Test Load
R = 14 KΩ
1.8V
OUTPUT
Z0 = 50Ω
10%
R = 14 KΩ
VL =0.9V
INCLUDING
JIG AND
SCOPE
90%
10%
90%
0.2
5 pF
(a)
ALL INPUT PULSES
VDDQ - 0.2
OUTPUT
RL = 50Ω
(b)
≤ 1 ns
≤ 1 ns
(c)
Note:
14. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05290 Rev. *I
Page 18 of 28
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CY7C1472V25
CY7C1474V25
Switching Characteristics Over the Operating Range
[15, 16]
–250
–200
Parameter
Description
Min.
[17]
VCC (typical) to the First Access Read or Write
1
1
1
ms
4.0
5.0
6.0
ns
tPower
Max.
Min.
–167
Max.
Min.
Max.
Unit
Clock
tCYC
Clock Cycle Time
FMAX
Maximum Operating Frequency
tCH
Clock HIGH
2.0
2.0
2.2
ns
tCL
Clock LOW
2.0
2.0
2.2
ns
250
200
167
MHz
Output Times
tCO
Data Output Valid After CLK Rise
tOEV
OE LOW to Output Valid
tDOH
Data Output Hold After CLK Rise
tCHZ
Clock to
High-Z[18, 19, 20]
Clock to
Low-Z[18, 19, 20]
tCLZ
3.0
3.0
1.3
OE HIGH to Output
tEOLZ
OE LOW to Output Low-Z[18, 19, 20]
3.0
1.3
3.0
1.3
High-Z[18, 19, 20]
tEOHZ
3.0
ns
3.4
ns
1.5
3.0
1.3
3.0
3.4
ns
3.4
1.5
3.0
ns
ns
3.4
ns
0
0
0
ns
Set-up Times
tAS
Address Set-up Before CLK Rise
1.4
1.4
1.5
ns
tDS
Data Input Set-up Before CLK Rise
1.4
1.4
1.5
ns
tCENS
CEN Set-up Before CLK Rise
1.4
1.4
1.5
ns
tWES
WE, BWx Set-up Before CLK Rise
1.4
1.4
1.5
ns
tALS
ADV/LD Set-up Before CLK Rise
1.4
1.4
1.5
ns
tCES
Chip Select Set-up
1.4
1.4
1.5
ns
tAH
Address Hold After CLK Rise
0.4
0.4
0.5
ns
tDH
Data Input Hold After CLK Rise
0.4
0.4
0.5
ns
tCENH
CEN Hold After CLK Rise
0.4
0.4
0.5
ns
tWEH
WE, BWx Hold After CLK Rise
0.4
0.4
0.5
ns
tALH
ADV/LD Hold after CLK Rise
0.4
0.4
0.5
ns
tCEH
Chip Select Hold After CLK Rise
0.4
0.4
0.5
ns
Hold Times
Notes:
15. Timing reference is 1.25V when VDDQ = 2.5V and 0.9V when VDDQ = 1.8V.
16. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
17. This part has a voltage regulator internally; tpower is the time power needs to be supplied above VDD minimum initially, before a Read or Write operation can be
initiated.
18. tCHZ, tCLZ, tEOLZ, and tEOHZ are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
19. At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
20. This parameter is sampled and not 100% tested.
Document #: 38-05290 Rev. *I
Page 19 of 28
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Switching Waveforms
Read/Write/Timing[21, 22, 23]
1
2
3
t CYC
4
5
6
A3
A4
7
8
9
A5
A6
A7
10
CLK
tCENS
tCENH
tCH
tCL
CEN
tCES
tCEH
CE
ADV/LD
WE
BWx
A1
ADDRESS
A2
tCO
tAS
tDS
tAH
Data
tDH
D(A1)
tCLZ
D(A2)
D(A2+1)
tDOH
Q(A3)
tOEV
Q(A4)
tCHZ
Q(A4+1)
D(A5)
Q(A6)
In-Out (DQ)
tOEHZ
tDOH
tOELZ
OE
WRITE
D(A1)
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
DON’T CARE
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
UNDEFINED
Notes:
21. For this waveform ZZ is tied LOW.
22. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH,CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
23. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.
Document #: 38-05290 Rev. *I
Page 20 of 28
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Switching Waveforms (continued)
NOP, STALL and DESELECT Cycles[21, 22, 24]
1
2
A1
A2
3
4
5
A3
A4
6
7
8
9
10
CLK
CEN
CE
ADV/LD
WE
BWx
ADDRESS
A5
tCHZ
D(A1)
Data
Q(A2)
D(A4)
Q(A3)
Q(A5)
In-Out (DQ)
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
STALL
DON’T CARE
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
UNDEFINED
ZZ Mode Timing[25, 26]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes:
24. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A Write is not performed during this cycle.
25. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device.
26. I/Os are in High-Z when exiting ZZ sleep mode.
Document #: 38-05290 Rev. *I
Page 21 of 28
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
167
Ordering Code
CY7C1470V25-167AXC
Package
Diagram
Operating
Range
Part and Package Type
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
CY7C1472V25-167AXC
CY7C1470V25-167BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1472V25-167BZC
CY7C1470V25-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1472V25-167BZXC
CY7C1474V25-167BGC
CY7C1474V25-167BGXC
CY7C1470V25-167AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
lndustrial
CY7C1472V25-167AXI
CY7C1470V25-167BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1472V25-167BZI
CY7C1470V25-167BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1472V25-167BZXI
CY7C1474V25-167BGI
CY7C1474V25-167BGXI
200
CY7C1470V25-200AXC
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
CY7C1472V25-200AXC
CY7C1470V25-200BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1472V25-200BZC
CY7C1470V25-200BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1472V25-200BZXC
CY7C1474V25-200BGC
CY7C1474V25-200BGXC
CY7C1470V25-200AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
lndustrial
CY7C1472V25-200AXI
CY7C1470V25-200BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
CY7C1472V25-200BZI
CY7C1470V25-200BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm) Lead-Free
CY7C1472V25-200BZXI
CY7C1474V25-200BGI
CY7C1474V25-200BGXI
Document #: 38-05290 Rev. *I
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
Page 22 of 28
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CY7C1470V25
CY7C1472V25
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Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
250
Ordering Code
CY7C1470V25-250AXC
Package
Diagram
Operating
Range
Part and Package Type
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
CY7C1472V25-250AXC
CY7C1470V25-250BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1472V25-250BZC
CY7C1470V25-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1472V25-250BZXC
CY7C1474V25-250BGC
CY7C1474V25-250BGXC
CY7C1470V25-250AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Industrial
CY7C1472V25-250AXI
CY7C1470V25-250BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1472V25-250BZI
CY7C1470V25-250BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1472V25-250BZXI
CY7C1474V25-250BGI
CY7C1474V25-250BGXI
Document #: 38-05290 Rev. *I
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
Page 23 of 28
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CY7C1470V25
CY7C1472V25
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Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050)
16.00±0.20
1.40±0.05
14.00±0.10
81
100
80
1
20.00±0.10
22.00±0.20
0.30±0.08
0.65
TYP.
30
12°±1°
(8X)
SEE DETAIL
A
51
31
50
0.20 MAX.
0.10
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
0.25
NOTE:
1. JEDEC STD REF MS-026
GAUGE PLANE
0°-7°
R 0.08 MIN.
0.20 MAX.
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0.60±0.15
0.20 MIN.
51-85050-*B
1.00 REF.
DETAIL
Document #: 38-05290 Rev. *I
A
Page 24 of 28
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CY7C1472V25
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Package Diagrams (continued)
165-Ball FBGA (15 x 17 x 1.4 mm) (51-85165)
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
Ø0.45±0.05(165X)
1
2
3
4
5
6
7
8
9
10
11
11
10
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
F
F
G
G
H
J
14.00
E
17.00±0.10
E
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
1.00
5.00
0.35
0.15 C
+0.05
-0.10
0.53±0.05
0.25 C
10.00
B
15.00±0.10
0.15(4X)
SEATING PLANE
1.40 MAX.
0.36
C
51-85165-*A
Document #: 38-05290 Rev. *I
Page 25 of 28
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Package Diagrams (continued)
209-Ball FBGA (14 x 22 x 1.76 mm) (51-85167)
51-85167-**
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device
Technology, Inc. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05290 Rev. *I
Page 26 of 28
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1470V25
CY7C1472V25
CY7C1474V25
Document History Page
Document Title: CY7C1470V25/CY7C1472V25/CY7C1474V25 72-Mbit(2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
Document Number: 38-05290
REV.
ECN No.
Issue Date
Orig. of
Change
Description of Change
**
114677
08/06/02
PKS
New data sheet
*A
121519
01/27/03
CJM
Updated features for package offering
Removed 300-MHz offering
Changed tCO, tEOV, tCHZ, tEOHZ from 2.4 ns to 2.6 ns (250 MHz), tDOH, tCLZ
from 0.8 ns to 1.0 ns (250 MHz), tDOH, tCLZ from 1.0 ns to 1.3 ns (200 MHz)
Updated ordering information
Changed Advanced Information to Preliminary
*B
223721
See ECN
NJY
Changed timing diagrams
Changed logic block diagrams
Modified Functional Description
Modified “Functional Overview” section
Added boundary scan order for all packages
Included thermal numbers and capacitance values for all packages
Included IDD and ISB values
Removed 250-MHz offering and included 225-MHz speed bin
Changed package outline for 165FBGA package and 209-ball BGA package
Removed 119-BGA package offering
*C
235012
See ECN
RYQ
Minor Change: The data sheets do not match on the spec system and
external web
*D
243572
See ECN
NJY
Changed ball C11,D11,E11,F11,G11 from DQPb,DQb,DQb,DQb,DQb to
DQPa,DQa,DQa,DQa,DQa in page 4
Modified capacitance values in page 19
*E
299511
See ECN
SYT
Removed 225-MHz offering and included 250-MHz speed bin
Changed tCYC from 4.4 ns to 4.0 ns for 250-MHz Speed Bin
Changed ΘJA from 16.8 to 24.63 °C/W and ΘJC from 3.3 to 2.28 °C/W for 100
TQFP Package on Page # 19
Added lead-free information for 100-Pin TQFP and 165 FBGA Packages
Added comment of ‘Lead-free BG packages availability’ below the Ordering
Information
*F
320197
See ECN
PCI
Corrected typo in part numbers on page# 9 and 10
*G
331513
See ECN
PCI
Address expansion pins/balls in the pinouts for all packages are modified as per
JEDEC standard
Added Address Expansion pins in the Pin Definitions Table
Added Industrial Operating Range
Modified VOL, VOH Test Conditions
Updated Ordering Information Table
*H
416221
See ECN
RXU
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed Three-state to Tri-state
Changed the description of IX from Input Load Current to Input Leakage Current
on page# 17
Changed the IX current values of MODE on page # 17 from –5 µA and 30 µA
to –30 µA and 5 µA
Changed the IX current values of ZZ on page # 17 from –30 µA and 5 µA
to –5 µA and 30 µA
Changed VDDQ < VDD to VDDQ < VDD on page #17
Replaced Package Name column with Package Diagram in the Ordering Information table
Updated Ordering Information table
Document #: 38-05290 Rev. *I
Page 27 of 28
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CY7C1472V25
CY7C1474V25
Document Title: CY7C1470V25/CY7C1472V25/CY7C1474V25 72-Mbit(2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
Document Number: 38-05290
*I
472335
See ECN
Document #: 38-05290 Rev. *I
VKN
Corrected the typo in the pin configuration for 209-Ball FBGA pinout
(Corrected the ball name for H9 to VSS from VSSQ).
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND.
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC
Switching Characteristics table.
Updated the Ordering Information table.
Page 28 of 28
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