GaAs DPDT Switch DC - 2 GHz SW-289 V 2.00 SO-14 Features ● ● ● ● ● ● ● ● Very Low Power Consumption: 100 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 48 dBm IP3 Nanosecond Switching Speed Temperature Range: -40˚C to +85˚C Low Cost SOIC14 Plastic Package Tape and Reel Packaging Available1 Description M/A-COM’s SW-289 is a GaAs MMIC DPDT switch in a low cost SOIC 14-lead surface mount plastic package. The SW-289 is ideally suited for use where very low power consumption is required. Typical applications include transmit/receive switching, switch matrices, digital step attenuators, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. Ordering Information The SW-289 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability. Part Number SW-289 PIN SW-289TR SW-289RTR Package SOIC 14-Lead Plastic Package Forward Tape & Reel Reverse Tape & Reel Electrical Specifications, TA = +25°C Parameter Insertion Loss Isolation VSWR Trise, Tfall Ton, Toff Transients One dB Compression IP2 IP3 Test Conditions2 DC – 0.1 GHz DC – 0.5 GHz DC – 1.0 GHz DC – 2.0 GHz DC – 0.1 GHz DC – 0.1 GHz DC – 1.0 GHz DC – 2.0 GHz DC – 2.0 GHz 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, 50% Control to 10% RF In Band Input Power 0.05 GHz Input Power 0.5 – 2.0 GHz Measured Relative 0.05 GHz to Input Power 0.5 – 2.0 GHz (for two-tone input power up to +5 dBm) Measured Relative 0.05 GHz to Input Power 0.5 – 2.0 GHz (for two-tone input power up to +5 dBm) Unit dB dB dB dB dB dB dB dB Min. 50 40 32 20 1.3:1 Typ. 0.35 0.35 0.4 0.6 56 43 35 23 nS nS mV dBm dBm dBm dBm 3 6 15 22 27 54 66 dBm dBm 45 48 1. Refer to “Tape and Reel Packaging” section, or contact factory. 2. All measurements with 0, -5 V control voltages at 1 GHz in a 50Ω system, unless otherwise specified. Max 0.5 0.5 0.6 0.8 GaAs DPDT Switch SW-289 V 2.00 Absolute Maximum Ratings1 Parameter Max. Input Power 0.05 GHz 0.5 – 2.0 GHz Control Voltage Operating Temperature Storage Temperature Functional Schematic Absolute Maximum GND +27 dBm +34 dBm +5 V, -8.5 V -40°C to +85°C -65°C to +150°C 1.Operation of this device above any one of these parameters may cause permanent damage. Typical Performance Pin Configuration Pin No. Description Pin No. 1 RF3 8 Description B 2 GND 9 GND 3 RFI 10 RF4 4 GND 11 GND 5 RF2 12 RF6 6 GND 13 GND 7 A 14 RF5 Truth Table Control Input Condition of Switch A B RF1 TO RF2 RF3 RF6 TO RF4 RF 5 1 0 0 1 On Off On Off "0" – 0 – -0.2V @ 20 µA max. "1" – -5V @ 40 µA Typ to -8V @ 900 µA max. Electrical Schematic Off On Off On