HFA04SD60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • • 2 1 N/C D-PAK 3 Anode Ultrafast recovery time Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating temperature Lead (Pb)-free Designed and qualified for Q101 level Available RoHS* COMPLIANT BENEFITS • • • • • PRODUCT SUMMARY VR 600 V VF at 4 A at 25 °C 1.8 V IF(AV) 4A trr (typical) 17 ns TJ (maximum) 150 °C Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VRRM TEST CONDITIONS VALUES UNITS 600 V Maximum continuous forward current IF(AV) Single pulse forward current IFSM Repetitive peak forward current IFRM TC = 116 °C 16 PD TC = 100 °C 10 W - 55 to 150 °C Maximum power dissipation Operating junction and storage temperatures TC = 100 °C 4 A 25 TJ, TStg ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage See fig. 1 SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 4 A - 1.5 1.8 IF = 8 A - 1.8 2.2 IR = 100 µA IF = 4 A, TJ = 125 °C - 1.4 1.7 VR = VR rated - 0.17 3.0 TJ = 125 °C, VR = 0.8 x VR rated - 44 300 UNITS V Maximum reverse leakage current IR Junction capacitance CT VR = 200 V - 4 8 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH µA * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94034 Revision: 29-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 HFA04SD60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge Rate of fall of recovery current SYMBOL trr IRRM TEST CONDITIONS MIN. TYP. IF = 1.0 A, dIF/dt = 200 A/µA, VR = 30 V - 17 - TJ = 25 °C - 28 42 TJ = 125 °C - 38 57 TJ = 25 °C - 2.9 5.2 - 3.7 6.7 - 40 60 TJ = 125 °C - 70 105 TJ = 25 °C - 280 - TJ = 125 °C - 235 - MIN. TYP. MAX. UNITS - 55 - 150 °C - - 240 - - 5.0 - - 80 - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf ⋅ in) TJ = 125 °C TJ = 25 °C Qrr dI(rec)M/dt IF = 4 A dIF/dt = 200 A/µs VR = 200 V MAX. UNITS ns A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature SYMBOL TEST CONDITIONS TJ, TStg TS 10 s Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style D-PAK For technical questions, contact: [email protected] °C/W g HFA04SD60S Document Number: 94034 Revision: 29-Jul-08 HFA04SD60SPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 4 A 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.1 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 1 0 2 3 5 4 0 6 100 200 400 300 500 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94034 Revision: 29-Jul-08 For technical questions, contact: [email protected] www.vishay.com 3 HFA04SD60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A 50 200 180 IF = 8 A IF = 4 A 160 40 trr (ns) Qrr (nC) 140 30 IF = 8 A IF = 4 A 120 100 80 60 VR = 200 V TJ = 125 °C TJ = 25 °C 40 20 100 20 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 14 1000 IF = 8 A IF = 4 A 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/µs) 10 Irr (A) VR = 200 V TJ = 125 °C TJ = 25 °C 8 6 4 0 100 www.vishay.com 4 VR = 200 V TJ = 125 °C TJ = 25 °C VR = 200 V TJ = 125 °C TJ = 25 °C 2 1000 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions, contact: [email protected] Document Number: 94034 Revision: 29-Jul-08 HFA04SD60SPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 4 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94034 Revision: 29-Jul-08 For technical questions, contact: [email protected] www.vishay.com 5 HFA04SD60SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 4 A ORDERING INFORMATION TABLE Device code HFA A 04 SD 60 S PbF 1 2 3 4 5 6 7 1 - HEXFRED® family 2 - Electron irradiated 3 - Current rating (04 = 4 A) 4 - D-PAK 5 - Voltage rating (60 = 600 V) 6 - Suffix 7 - None = Standard production S = D2PAK/D-PAK TR = Tape and reel TRL = Tape and reel left TRR = Tape and reel right PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95016 Part marking information http://www.vishay.com/doc?95059 Packaging information http://www.vishay.com/doc?95033 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94034 Revision: 29-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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