Diodes SMD Type Silicon Epitaxial Planar Diode KDV214 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 Excellent C-V Characteristics, and Small Tracking Error. +0.05 0.1-0.02 Useful for Small Size Tuner. A bsolute M axim um R atings T a = 25 P aram eter S ym bol V alue U nit VR 32 V R everse V oltage P eak R everse V oltage V RM Junction T em perature Tj 125 T stg -55 to + 125 S torage T em perature R ange 35 (R L = 10K ) V Typ Electrical Characteristics Ta = 25 Conditions Min Reverse Voltage Parameter Symbol VR IR = 1 30 Reverse Current IR V R = 28 V Capacitance A Max V 10 C 2V f = 1 MHz;V R = 2 V 14.16 16.25 C 25V f = 1 MHz;V R = 25 V 2.11 2.43 Capacitance Ratio C 2V/C 25V Series Resistance rs 5.9 V R = 5V, f = 470 MHz Unit 6.5 7.15 0.4 0.55 nA pF Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) 0.025 C(Min.) Marking Marking UO www.kexin.com.cn 1