SEMICONDUCTOR TECHNICAL DATA KDV214 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K H F ・Excellent C-V Characteristics, and Small Tracking Error. A ・Low Series Resistance : rS=0.4Ω(Typ.) 1 E ・High Capacitance Ratio : C2V/C25V=6.5(Typ.) G B CATHODE MARK FEATURES ・Useful for Small Size Tuner. 2 J D C I DIM A MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING VR 30 V Peak Reverse Voltage VRM 35 (RL=10kΩ) V Junction Temperature Tj 125 ℃ Tstg -55～125 ℃ Reverse Voltage Storage Temperature Range B C UNIT M D M E MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + F G H I 1. ANODE 2. CATHODE J K L M _ 0.05 0.4 + 2 +4/-2 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1μA 30 - - V Reverse Current IR VR=28V - - 10 nA Capacitance C2V VR=2V, f=1MHz 14.16 - 16.25 pF Capacitance C25V VR=25V, f=1MHz 2.11 - 2.43 pF 5.90 6.50 7.15 - - 0.4 0.55 Ω Capacitance Ratio C2V/C25V Series Resistance rS VR=5V, f=470MHz Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) ≦0.025 C(Min.) Marking (VR=2~25V) Type Name UO 2002. 6. 14 Revision No : 2 1/2 KDV214 r s - VR C V - VR 0.8 50 SERIES RESISTANCE r S (Ω) f=1MHz Ta=25 C 30 10 5 3 0 4 8 12 16 20 24 SERIES RESISTNACE rS (Ω) 0.4 0.2 0 28 1 3 10 30 REVERSE VOLTAGE V R (V) rS - f C - Ta VR=5V Ta=25 C 0.6 0.4 0.2 0 100 300 FREQUENCY f (MHz) 500 1K 3 2 f=1MHz VR=2V 1 14 20 0 25 -1 -2 -40 -20 Revision No : 2 0 20 40 60 80 AMBIENT TEMPERATURE Ta ( C) NOTE : 2002. 6. 14 5 REVERSE VOLTAGE V R (V) 0.8 50 0.6 C (%) 1 f=50MHz Ta=25 C CAPACITANCE CHANGE RATIO CAPACITANCE CV (pF) 100 C= C(Ta)-C(25) C(25) x100 2/2