LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Sealed to IP67 Pb Lead-Free Parts LA274W/EG-W55R14 DATA SHEET DOC. NO : QW0905-L A274W/EG-W55R14 REV. : B DATE : 15 - Mar. - 2007 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LA274W/EG-W55R14 Package Dimensions 8.4 +Vcc 20.6 Vcc=24Volts IF RL RL=1000ohms ±5% G E 1 VF 155±5.0 IF= Vcc-VF RL 2 3 1.ANODE GREEN 2.COMMON CATHODE 3.ANODE ORANGE GREEN RED ORANGE 1 23 LEG3393/F243-PF 5.0 7.6 5.9 8.6 10.5±0.5 G 5.0±0.5 E 1.5 MAX 1 1.0±0.3 1.0±0.3 2.54TYP 2.54TYP 1 2 2 3 1.ANODE GREEN 2.COMMON CATHODE 3.ANODE ORANGE 3 Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA274W/EG-W55R14 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Rating Symbol Parameter UNIT G E Forward Voltage DC 24 24 V Reverse Voltaget @5V Vr 24 24 V Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +100 ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted Peak Spectral wave halfwidth length Δλ nm λPnm Luminous intensity (mcd) @24V Reverse Viewing angle Current 2θ 1/2 (μA) VR= 24 V (deg) Min. Max. Min. Typ. Lens GaAsP/GaP Orange Forward current (mA) @24V 635 45 20.4 23.5 45 75 100 40 565 30 20.4 23.5 60 100 100 40 Water Clear LA274W/EG-W55R14 GaP Green Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA274W/EG-W55R14 Page 3/5 Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature(℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA274W/EG-W55R14 Page 4/5 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 2.0 1.0 3.0 4.0 1.0 5.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 1.2 Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/5 PART NO. LA274W/EG-W55R14 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11