LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA207B/G.SRG.G.2X DATA SHEET DOC. NO : QW0905-L A207B/G.SRG.G.2X REV. : A DATE : 09 - Sep. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA207B/G.SRG.G.2X Page 1/5 Package Dimensions 44 1.6±0.3 9*4=36 11.37 6.35 8.87 2.9±0.3 2.54*2=5.08TYP X G 1 2 3 + - SRG 1 2 3 - + - X G 1 2 3 + - G 1.NONE CHIP 2.COMMON ANODE 3.CATHODE GREEN 1 2 3 Ø0.5 TYP 5.1±0.5 1.CATHODE RED 2.COMMON ANODE 3.CATHODE GREEN 2.9 3.1 3.3 4.3 SR G 1 2 3 6.45±0.5 1.5 MAX LSRG2692/S55 □0.5 TYP LG2690/R6 18.0MIN SR G 1 2 3 1.CATHODE RED 2.COMMON ANODE 3.CATHODE GREEN G 2.0MIN 2.0MIN 2.54TYP 1 2 3 2.54TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 1 2 3 1.NONE CHIP 2.COMMON ANODE 3.CATHODE GREEN LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/5 PART NO. LA207B/G.SRG.G.2X Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G SR Forward Current IF 30 30 mA Peak Forward Current Duty 1/10@10KHz IFP 120 100 mA Power Dissipation PD 100 100 mW Reverse Current @5V Ir 10 μA Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +100 ℃ Soldering Temperature Tsol Max 260 ℃ for 5 sec Max (2mm from body) Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted GaP LA207B/G.SRG.G.2X GaAlAs Forward Peak Spectral voltage wave halfwidth length △λ nm @ 20mA(V) λPnm Lens Luminous intensity Viewing angle @20mA(mcd) 2θ 1/2 (deg) Min. Max. Min. Typ. Green Green Diffused 565 30 1.7 2.6 9.0 24 50 Red 660 20 1.5 2.4 38 65 36 565 30 1.7 2.6 15 28 36 White Diffused GaP Green Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA207B/G.SRG.G.2X Page 3/5 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 Fig.6 Directive Radiation 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA207B/G.SRG.G.2X Page 4/5 Typical Electro-Optical Characteristics Curve SR CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 2.0 1.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/5 PART NO. LA207B/G.SRG.G.2X Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11