ONSEMI MMSD103T1_10

MMSD103T1
High Voltage Switching
Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
1
Cathode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
250
V
Peak Forward Current
IF
200
mA
IFM(surge)
625
mA
Characteristic
Symbol
Value
Unit
Forward Power Dissipation, FR−5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
PF
400
3.2
mW
mW/°C
Thermal Resistance, Junction−to−Case
RJL
174
°C/W
Thermal Resistance, Junction−to−Ambient
RJA
492
°C/W
TJ, Tstg
−55 to +150
°C
Peak Forward Surge Current
2
1
THERMAL CHARACTERISTICS
Junction and Storage
Temperature Range
2
Anode
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
1
JS M G
G
JS = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MMSD103T1G
SOD−123
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 5
1
Publication Order Number:
MMSD103T1/D
MMSD103T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−
−
1.0
100
250
−
−
−
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 V)
(VR = 200 V, TJ = 150°C)
IR
Reverse Breakdown Voltage
(IBR = 100 A)
V(BR)
A
V
Forward Voltage
(IF = 100 mA)
(IF = 200 mA)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mA, RL = 100 )
trr
−
50
ns
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
t
IF
trr
10%
t
0.1 F
90%
D.U.T.
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IR(REC) = 3.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
MMSD103T1
TA = −55°C
1000
800
REVERSE CURRENT (nA)
25°C
150°C
600
400
200
1
1
10
100
1000
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
TA = 150°C
TA = 25°C
TA = −55°C
1
2
5
10
20
50
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
0.75
Cd, DIODE CAPACITANCE (pF)
FORWARD VOLTAGE (mV)
1200
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
0
1
2
3
4
5
6
7
8
VR, REVERSE VOLTAGE (V)
Figure 4. Diode Capacitance
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3
9
10
100 200 300
MMSD103T1
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE E
D
ÂÂÂÂ
ÂÂÂÂ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
A1
1
HE
DIM
A
A1
b
c
D
E
HE
L
E
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
STYLE 1:
PIN 1. CATHODE
2. ANODE
L
2
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
----0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
----0.25
C
b
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 81−3−5773−3850
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4
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
MMSD103T1/D