MMSD103T1 High Voltage Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 1 Cathode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 V Peak Forward Current IF 200 mA IFM(surge) 625 mA Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C PF 400 3.2 mW mW/°C Thermal Resistance, Junction−to−Case RJL 174 °C/W Thermal Resistance, Junction−to−Ambient RJA 492 °C/W TJ, Tstg −55 to +150 °C Peak Forward Surge Current 2 1 THERMAL CHARACTERISTICS Junction and Storage Temperature Range 2 Anode Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. SOD−123 CASE 425 STYLE 1 MARKING DIAGRAM 1 JS M G G JS = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MMSD103T1G SOD−123 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 5 1 Publication Order Number: MMSD103T1/D MMSD103T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − 1.0 100 250 − − − 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 V) (VR = 200 V, TJ = 150°C) IR Reverse Breakdown Voltage (IBR = 100 A) V(BR) A V Forward Voltage (IF = 100 mA) (IF = 200 mA) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mA, RL = 100 ) trr − 50 ns 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 MMSD103T1 TA = −55°C 1000 800 REVERSE CURRENT (nA) 25°C 150°C 600 400 200 1 1 10 100 1000 7000 6000 5000 4000 3000 6 5 4 3 2 1 0 TA = 150°C TA = 25°C TA = −55°C 1 2 5 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 0.75 Cd, DIODE CAPACITANCE (pF) FORWARD VOLTAGE (mV) 1200 0.7 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0 1 2 3 4 5 6 7 8 VR, REVERSE VOLTAGE (V) Figure 4. Diode Capacitance http://onsemi.com 3 9 10 100 200 300 MMSD103T1 PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A A1 1 HE DIM A A1 b c D E HE L E MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 --- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --- STYLE 1: PIN 1. CATHODE 2. ANODE L 2 MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 C b SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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