BAS21AHT1G Preferred Device Low Leakage Switching Diode Features •This is a Pb-Free Device http://onsemi.com LOW LEAKAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM(surge) Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage 250 Vdc Peak Forward Current 200 mAdc Peak Forward Surge Current 625 mAdc 1 CATHODE THERMAL CHARACTERISTICS Characteristic Max Unit PD Total Device Dissipation FR-5 Board, (Note 1) TA = 25°C Derate above 25°C 200 mW 1.57 mW/°C 635 °C/W -55 to +150 °C TJ, Tstg Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range MARKING DIAGRAM 2 Symbol RqJA 2 ANODE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 Minimum Pad 1 AA MG G SOD-323 CASE 477 STYLE 1 AA M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAS21AHT1G SOD-323 (Pb-Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 0 1 Publication Order Number: BAS21AHT1/D BAS21AHT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit - - 40 100 nAdc mAdc 250 - - Vdc - - 1000 1250 OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD - - 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr - 50 - ns 820 W +10 V 2.0 k tr 0.1 mF 100 mH tp IF IF t trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 3.0 mA IR VR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 1200 25°C REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) TA = -55°C 1000 800 155°C 600 400 200 7000 6000 5000 4000 3000 TA = 155°C 6 5 4 3 2 TA = 25°C 1 0 1 1 10 100 1000 TA = -55°C 1 2 5 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 2 100 200 300 BAS21AHT1G PACKAGE DIMENSIONS SOD-323 PLASTIC PACKAGE CASE 477-02 ISSUE H HE D b 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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