FREESCALE MRF7S35120HSR3

Freescale Semiconductor
Technical Data
Document Number: MRF7S35120HS
Rev. 1, 6/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF7S35120HSR3
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
• Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA,
Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz,
Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 12 dB
Drain Efficiency — 40%
• Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA,
Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts,
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain — 13 dB
Drain Efficiency — 16%
RCE — - 33 dB (EVM — 2.2% rms)
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak
Power
• Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
3100- 3500 MHz, 120 W PEAK, 32 V
PULSED
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465A - 06, STYLE 1
NI - 780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 6.0, +10
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Operating Junction
Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 120 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Case Temperature 72°C, 120 W Pulsed, 500 μsec Pulse Width, 10% Duty Cycle
RθJC
0.11
0.12
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S35120HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDD = 32 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.4
3
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
0.1
0.17
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.87
—
pF
Output Capacitance
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
464
—
pF
Input Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
214
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak (24 W Avg.), f = 3100 MHz
and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time
Power Gain
Gps
10.5
12
13.5
Drain Efficiency
ηD
Input Return Loss
IRL
dB
38
40
—
%
—
- 15
-8
dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak
(24 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time
Output Pulse Droop
(500 μsec Pulse Width, 10% Duty Cycle)
Load Mismatch Tolerance
(VSWR = 10:1 at all Phase Angles)
DRPout
VSWR - T
—
0.3
—
dB
No Degradation in Output Power
1. Part internally matched both on input and output.
MRF7S35120HSR3
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
+
C9
C8
C6
Z2
Z3
Z4
Z5
Z6
Z7
Z8
+
+
C2
C3
C4
C1
VSUPPLY
Z24
Z13
Z11
Z1
+
R1
C7
Z12
RF
INPUT
+
Z9
Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22
Z23
RF
OUTPUT
C5
Z10
C10
DUT
Z1
Z2*
Z3*
Z4
Z5, Z22
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
0.120″ x 0.082″ Microstrip
0.094″ x 0.310″ Microstrip
0.3502″ x 0.082″ Microstrip
0.120″ x 0.629″ Microstrip
0.050″ x 0.082″ Microstrip
0.052″ x 0.082″ Microstrip
0.084″ x 0.436″ Microstrip
1.142″ x 0.082″ Microstrip
0.144″ x 0.564″ Microstrip
0.078″ x 0.564″ Microstrip
0.048″ x 1.349″ Microstrip
0.120″ x 0.175″ Microstrip
0.087″ x 0.576″ Microstrip
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z23
Z24
PCB
0.390″ x 0.576″ Microstrip
0.202″ x 0.082″ Microstrip
0.066″ x 0.162″ Microstrip
0.084″ x 0.330″ Microstrip
0.105″ x 0.082″ Microstrip
0.080″ x 0.147″ Microstrip
0.366″ x 0.082″ Microstrip
0.070″ x 0.207″ Microstrip
0.734″ x 0.082″ Microstrip
0.071″ x 0.477″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55
* Line length includes microstrip bends
Figure 1. MRF7S35120HSR3 Test Circuit Schematic
Table 5. MRF7S35120HSR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
47 Ω, 100 MHz Short Ferrite Bead
2743019447
Fair- Rite
C1
470 μF, 63 V Electrolytic Capacitor
477KXM063M
Illinois Cap.
C2
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap.
C3, C4
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C5
3.3 pF Chip Capacitor
ATC100B3R3CT500XT
ATC
C6, C7, C10
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C8, C9
22 μF, 25 V Tantalum Capacitors
ECS - T1ED226R
Panasonic TE series
R1
51 Ω, 1/4 W Chip Resistor
CRCW120651R0FKEA
Vishay
MRF7S35120HSR3
RF Device Data
Freescale Semiconductor
3
C9
C1
C8
C6
B1
C3
R1
C4
C7
C2
C10
CUT OUT AREA
C5
MRF7S35120HS
Rev. 3a
Figure 2. MRF7S35120HSR3 Test Circuit Component Layout
MRF7S35120HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
Coss
Ciss
100
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
1000
10
Crss
1
TJ = 200°C
TJ = 175°C
10
TJ = 150°C
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
TC = 25°C
0.1
1
0
5
10
15
20
25
30
35
10
1
100
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain - Source Voltage
Figure 4. DC Safe Operating Area
13
56
50
Ideal
41
3300 MHz
11
32
3100 MHz
ηD
10
23
9
14
VDD = 32 Vdc, IDQ = 150 mA
Pulse Width = 100 μsec
Duty Cycle = 20%
8
3
100
10
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
12
Pout, OUTPUT POWER (dBm) PULSED
P3dB = 52 dBm (157 W)
Gps
f = 3500 MHz
5
200
55
P2dB = 51.7 dBm (149 W)
54
53
P1dB = 51.3 dBm (135 W)
52
Actual
51
50
VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
49
48
36
37
38
39
40
41
42
43
44
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 6. Pulsed Output Power versus
Input Power
45
13
14
IDQ = 1000 mA
12
13
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
32 V
500 mA
12
300 mA
11
150 mA
10
9
VDD = 32 Vdc, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
11
10
9
8
IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
7
8
VDD = 24 V
30 V
28 V
26 V
6
10
1
100
200
3
100
10
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
Figure 8. Pulsed Power Gain versus
Output Power
200
MRF7S35120HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
3100 MHz −30_C
3100 MHz 25_C
200
13.5
3500 MHz −30_C
3300 MHz 25_C
150
3100 MHz 85_C
100
VDD = 32 Vdc, IDQ = 150 mA, f = 3100 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
3300 MHz 85_C
3500 MHz 85_C
50
12
25_C
TC = −30_C
10.5
25_C
ηD
5
15
10
20
25
Pin, INPUT POWER (WATTS) PULSED
Gps, POWER GAIN (dB)
60
−30_C
50
25_C
Gps
40
12
TC = −30_C
30
10.5
25_C
85_C
9
10
6
10
1
20
ηD
85_C
7.5
0
300
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3100 MHz
VDD = 32 Vdc, IDQ = 150 mA, f = 3300 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
13.5
100
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
15
10
1
ηD, DRAIN EFFICIENCY (%)
0
20
10
85_C
6
0
50
30
85_C
9
−30_C
40
Gps
7.5
VDD = 32 Vdc, IDQ = 150 mA
Pulse Width = 100 μsec, Duty Cycle = 20%
60
ηD, DRAIN EFFICIENCY (%)
15
3500 MHz 25_C
3300 MHz −30_C
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PULSED
250
100
0
300
Pout, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3300 MHz
13.5
Gps, POWER GAIN (dB)
60
VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
−30_C
50
Gps
40
12
TC = −30_C
25_C
30
10.5
25_C
85_C
9
85_C
7.5
10
6
1
20
ηD
ηD, DRAIN EFFICIENCY (%)
15
10
100
0
300
Pout, OUTPUT POWER (WATTS) PULSED
Figure 12. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3500 MHz
MRF7S35120HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
43
42
ηD
41
13
Gps
40
12.5
12
−9
11.5
IRL
−18
11
10.5
10
3100
−27
VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W
Pulse Width = 100 μsec, Duty Cycle = 20%
3150
3200
3250
3300
3350
3400
3450
−36
3500
IRL, INPUT
RETURN LOSS (dB)
Gps, POWER GAIN (dB)
13.5
ηD, DRAIN
EFFICIENCY (%)
14
f, FREQUENCY (MHz)
−28
21
−30
−31
20
RCE
19
18
ηD
−32
17
−33
16
−34
15
−35
14
Gps
−36
13
−37
−38
41
41.5
42
42.5
43
43.5
13.6
13.4
13.2
13
12
12.8
11
12.6
GAIN (dB)
VDD = 32 Vdc, IDQ = 900 mA, f = 3500 MHz
Single−Carrier OFDM 802.16d, 64 QAM 3/4
4 Bursts, 7 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
−29
ηD, DRAIN EFFICIENCY (%)
RCE (RELATIVE CONSTELLATION ERROR (dB)
Figure 13. Pulsed Power Gain, Drain Efficiency
and IRL versus Frequency
44
Pout, OUTPUT POWER (dBm)
Figure 14. Single - Channel OFDM Relative Constellation Error,
Drain Efficiency and Gain versus Output Power
MTTF (HOURS)
1010
109
108
107
90
110
130
150
170
190
210
TJ, JUNCTION TEMPERATURE (°C)
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 32 Vdc, Pout = 120 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 40%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. MTTF versus Junction Temperature
MRF7S35120HSR3
RF Device Data
Freescale Semiconductor
7
Zo = 25 Ω
Zload
f = 3500 MHz
f = 2900 MHz
f = 3500 MHz
f = 2900 MHz
Zsource
VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak
f
MHz
Zsource
W
Zload
W
2900
0.825 - j4.72
6.03 - j0.487
3100
1.1 - j6.74
4.63 - j0.0472
3300
3.95 - j10.8
2.65 - j1.44
3500
18 - j1.1
3.65 - j2.56
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S35120HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF7S35120HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2008
• Initial Release of Data Sheet
1
June 2008
• Corrected Pout error and changed from 42.5 Watts to 18 Watts, Typical WiMAX Performance bullet, p. 1
MRF7S35120HSR3
10
RF Device Data
Freescale Semiconductor
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MRF7S35120HSR3
Document
RF
DeviceNumber:
Data MRF7S35120HS
Rev. 1, 6/2008
Freescale
Semiconductor
11