Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S35120HS
Rev. 3, 6/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF7S35120HSR3
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
• Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA,
Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz,
Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 12 dB
Drain Efficiency — 40%
Rise Time — 6 ns
Fall Time — 6 ns
• Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA,
Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts,
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain — 13 dB
Drain Efficiency — 16%
RCE — --33 dB (EVM — 2.2% rms)
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak
Power
• Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
3100--3500 MHz, 120 W PEAK, 32 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465A--06, STYLE 1
NI--780S
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Operating Junction
Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 120 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Case Temperature 72°C, 120 W Pulsed, 500 μsec Pulse Width, 10% Duty Cycle
ZθJC
0.11
0.12
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S35120HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDD = 32 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.4
3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
0.1
0.17
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.87
—
pF
Output Capacitance
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
464
—
pF
Input Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
214
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak (24 W Avg.), f = 3100 MHz
and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, <25 ns Input Rise Time
Power Gain
Gps
10.5
12
13.5
dB
Drain Efficiency
ηD
38
40
—
%
Input Return Loss
IRL
—
--15
--8
dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak
(24 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, <25 ns Input Rise Time
Output Pulse Droop
(500 μsec Pulse Width, 10% Duty Cycle)
Load Mismatch Tolerance
(VSWR = 10:1 at all Phase Angles)
DRPout
VSWR--T
—
0.3
—
dB
No Degradation in Output Power
1. Part internally matched both on input and output.
MRF7S35120HSR3
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
+
C9
C8
C6
R1
C7
Z12
RF
INPUT
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
+
+
C2
C3
C4
C1
VSUPPLY
Z13
Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22
Z23
RF
OUTPUT
C5
Z10
C10
Z1
Z2*
Z3*
Z4
Z5, Z22
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
+
Z24
Z11
Z1
+
DUT
0.120″ x 0.082″ Microstrip
0.094″ x 0.310″ Microstrip
0.3502″ x 0.082″ Microstrip
0.120″ x 0.629″ Microstrip
0.050″ x 0.082″ Microstrip
0.052″ x 0.082″ Microstrip
0.084″ x 0.436″ Microstrip
1.142″ x 0.082″ Microstrip
0.144″ x 0.564″ Microstrip
0.078″ x 0.564″ Microstrip
0.048″ x 1.349″ Microstrip
0.120″ x 0.175″ Microstrip
0.087″ x 0.576″ Microstrip
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z23
Z24
PCB
0.390″ x 0.576″ Microstrip
0.202″ x 0.082″ Microstrip
0.066″ x 0.162″ Microstrip
0.084″ x 0.330″ Microstrip
0.105″ x 0.082″ Microstrip
0.080″ x 0.147″ Microstrip
0.366″ x 0.082″ Microstrip
0.070″ x 0.207″ Microstrip
0.734″ x 0.082″ Microstrip
0.071″ x 0.477″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55
* Line length includes microstrip bends
Figure 1. MRF7S35120HSR3 Test Circuit Schematic
Table 5. MRF7S35120HSR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
47 Ω, 100 MHz Short Ferrite Bead
2743019447
Fair--Rite
C1
470 μF, 63 V Electrolytic Capacitor
477KXM063M
Illinois Capacitor
C2
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Capacitor
C3, C4
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C5
3.3 pF Chip Capacitor
ATC100B3R3CT500XT
ATC
C6, C7, C10
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C8, C9
22 μF, 25 V Tantalum Capacitors
ECS--T1ED226R
Panasonic TE series
J1
Jumper
Copper Foil
R1
51 Ω, 1/4 W Chip Resistor
CRCW120651R0FKEA
Vishay
MRF7S35120HSR3
RF Device Data
Freescale Semiconductor
3
C9
C1
C8
C6
B1
C3
J1
R1
C4
C7
C2
C10
CUT OUT AREA
C5
MRF7S35120HS
Rev. 3a
Figure 2. MRF7S35120HSR3 Test Circuit Component Layout
MRF7S35120HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
Coss
ID, DRAIN CURRENT (AMPS)
Ciss
100
10
Crss
1
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
0.1
0
5
10
15
20
TJ = 150°C
TC = 25°C
25
30
100
10
1
35
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
Figure 4. DC Safe Operating Area
56
Gps
f = 3500 MHz
41
3300 MHz
11
32
3100 MHz
ηD
10
9
23
14
VDD = 32 Vdc, IDQ = 150 mA
Pulse Width = 100 μsec
Duty Cycle = 20%
8
3
10
100
Pout, OUTPUT POWER (dBm) PULSED
50
12
Gps, POWER GAIN (dB)
TJ = 175°C
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
13
5
Ideal
P3dB = 52 dBm (157 W)
55
P2dB = 51.7 dBm (149 W)
54
53
P1dB = 51.3 dBm (135 W)
52
Actual
51
50
VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
49
48
200
36
37
38
39
40
41
42
43
44
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 6. Pulsed Output Power versus
Input Power
45
13
14
IDQ = 1000 mA
13
12
500 mA
12
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
TJ = 200°C
10
1
ηD, DRAIN EFFICIENCY (%)
C, CAPACITANCE (pF)
1000
300 mA
11
150 mA
10
9
VDD = 32 Vdc, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
10
100
10
9
8
IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
7
8
1
32 V
11
200
6
3
VDD = 24 V
10
30 V
28 V
26 V
100
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
Figure 8. Pulsed Power Gain versus
Output Power
200
MRF7S35120HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
13.5
3500 MHz --30_C
3300 MHz 25_C
3100 MHz 85_C
100
3300 MHz 85_C
3500 MHz 85_C
50
0
5
10
15
20
9
Gps, POWER GAIN (dB)
85_C
25_C
ηD
10
60
--30_C
50
25_C
Gps
40
TC = --30_C
30
10.5
25_C
85_C
20
ηD
85_C
10
6
10
1
0
300
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3100 MHz
12
7.5
100
Pout, OUTPUT POWER (WATTS) PULSED
VDD = 32 Vdc, IDQ = 150 mA, f = 3300 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
9
20
10
85_C
1
Figure 9. Pulsed Output Power versus
Input Power
13.5
50
30
6
25
--30_C
40
TC = --30_C
10.5
Pin, INPUT POWER (WATTS) PULSED
15
25_C
Gps
7.5
VDD = 32 Vdc, IDQ = 150 mA
Pulse Width = 100 μsec, Duty Cycle = 20%
0
12
60
100
ηD, DRAIN EFFICIENCY (%)
150
VDD = 32 Vdc, IDQ = 150 mA, f = 3100 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
ηD, DRAIN EFFICIENCY (%)
3100 MHz --30_C
3100 MHz 25_C
200
15
3500 MHz 25_C
3300 MHz --30_C
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PULSED
250
0
300
Pout, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3300 MHz
13.5
Gps, POWER GAIN (dB)
60
VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
--30_C
Gps
12
50
40
TC = --30_C
25_C
30
10.5
25_C
85_C
9
85_C
7.5
10
6
1
20
ηD
10
100
ηD, DRAIN EFFICIENCY (%)
15
0
300
Pout, OUTPUT POWER (WATTS) PULSED
Figure 12. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3500 MHz
MRF7S35120HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
43
42
ηD
13
41
Gps
12.5
40
12
11.5
--9
IRL
--18
11
10.5
10
3100
--27
VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W
Pulse Width = 100 μsec, Duty Cycle = 20%
3150
3200
3250
3300
3350
3400
3450
--36
3500
IRL, INPUT
RETURN LOSS (dB)
Gps, POWER GAIN (dB)
13.5
ηD, DRAIN
EFFICIENCY (%)
14
f, FREQUENCY (MHz)
VDD = 32 Vdc, IDQ = 900 mA, f = 3500 MHz
Single--Carrier OFDM 802.16d, 64 QAM 3/4
4 Bursts, 7 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
--29
--30
--31
21
20
RCE
19
18
ηD
--32
17
--33
16
--34
15
--35
14
Gps
--36
13
--37
--38
41
41.5
42
42.5
43
43.5
13.6
13.4
13.2
13
12
12.8
11
12.6
44
GAIN (dB)
--28
ηD, DRAIN EFFICIENCY (%)
RCE (RELATIVE CONSTELLATION ERROR (dB)
Figure 13. Pulsed Power Gain, Drain Efficiency
and IRL versus Frequency
Pout, OUTPUT POWER (dBm)
Figure 14. Single--Channel OFDM Relative Constellation Error,
Drain Efficiency and Gain versus Output Power
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
TJ, JUNCTION TEMPERATURE (°C)
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 32 Vdc, Pout = 120 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 40%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. MTTF versus Junction Temperature
MRF7S35120HSR3
RF Device Data
Freescale Semiconductor
7
Zo = 25 Ω
Zload
f = 3500 MHz
f = 2900 MHz
f = 3500 MHz
f = 2900 MHz
Zsource
VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak
f
MHz
Zsource
Ω
2900
0.825 -- j4.72
6.03 -- j0.487
3100
1.1 -- j6.74
4.63 -- j0.0472
3300
3.95 -- j10.8
2.65 -- j1.44
3500
18 -- j1.1
3.65 -- j2.56
Zload
Ω
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S35120HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
M
T A
R
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A--06
ISSUE H
NI--780S
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
-----0.040
-----0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
-----1.02
-----0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF7S35120HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2008
• Initial Release of Data Sheet
1
June 2008
• Corrected Pout error and changed from 42.5 Watts to 18 Watts, Typical WiMAX Performance bullet, p. 1
2
Nov. 2008
• Updated Fig. 15, MTTF versus Junction Temperature, to correct a calculation error, p. 7
3
June 2010
• Added Rise and Fall Time data to Typical Pulsed Performance bullet, p. 1
• Reporting of pulsed thermal data now shown using the ZθJC symbol, Table 2, Thermal Characteristics, p. 1
• Added less than sign (<) to 25 ns in Functional Tests table header and Pulsed RF Performance table
header, p. 2
• Added Jumper to Table 6, Test Circuit Component Designations and Values and to Fig. 2, Test Circuit
Component Layout, p. 3, 4
MRF7S35120HSR3
10
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2008, 2010. All rights reserved.
MRF7S35120HSR3
Document
Number:
RF
Device
Data MRF7S35120HS
Rev. 3, 6/2010
Freescale
Semiconductor
11