Pb Free Product NCE10G120 http://www.ncepower.com NCE10G120 1200V, 10A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=10A High input impedance z z z z Applications G Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications z z C E C General Description Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. G E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage +/-25 V IC Continuous Collector Current @TC=25°C 16 A Continuous Collector Current @TC=100°C 10 A 24 A 138 W ICM(1) Pulsed Collector Current PD Maximum Power Dissipation TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5seconds 260 °C @TC=25°C Notes: 1. Repetitive rating, Pulse width limited by max. junction temperature 共 8 页,第 1 页 Pb Free Product NCE10G120 http://www.ncepower.com Thermal Characteristics Symbol Parameter Typ. Max. Units RƟJC Thermal Resistance, Junction to Case - 0.9 °C/W RƟJA Thermal Resistance, Junction to Ambient 62 Electrical Characteristics of the IGBT TC=25°C Symbol Parameter Off Characteristics Test Conditions Min. Typ. Max. Units - - V BVCES Collector to Emitter Breakdown Voltage VGE=0V, Ic=250uA ICES Collector Cut-Off Current VCE=VCES, VGE=0V - - 250 uA IGES G-E Leakage Current VGE=VGES, VCE=0V - - +/-250 nA IC=20mA, VCE=VGE 4.0 - 7.0 V IC=20A, VGE=15V TC=25°C - 2 2.5 V IC=20A, VGE=15V TC=125°C - 2.15 - V 1200 On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance - 606 - pF Coes Output Capacitance - 48 - pF Cres Reverse Transfer Capacitance - 29 - pF VCE=30V, VGE=0V, f=1MHz Switching Characteristics td(on) Turn-On Delay Time - 45 - ns tr Rise Time - 20 - ns td(off) Turn-Off Delay Time - 520 - ns tf Fall Time - 80 - ns Eon Turn-On Switching Loss - 0.68 - mJ Eoff Turn-Off Switching Loss - 0.78 - mJ Ets Total Switching Loss - 1.46 - mJ td(on) Turn-On Delay Time 45 ns tr Rise Time 24 ns td(off) Turn-Off Delay Time 592 ns tf Fall Time 177 ns Eon Turn-On Switching Loss 0.83 mJ Eoff Turn-Off Switching Loss 1.19 mJ Ets Total Switching Loss 2.02 mJ VCC=600V,IC=20A, RG=10Ώ,VGE=15V, Resistive Load, TC=25°C VCC=600V,IC=20A, RG=10Ώ,VGE=15V, Resistive Load, TC=125°C 共 8 页,第 2 页 Pb Free Product NCE10G120 http://www.ncepower.com Typical Performance Characteristics Figure 2. Typical Saturation Voltage Characteristics Collector Current, IC(A) Collector Current IC, (A) Figure 1. Typical Output Characteristics Collector Emitter Voltage, VCE(V) Collector Emitter Voltage, VCE(V) Figure 7. Capacitance Characteristics Capacitance Collector Emitter Voltage, IC(V) Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Collector Emitter Voltage, VCE(V) Case temperature, Tc(°C) Figure 8. Switching Characteristics vs. Gate Resistance Switching Time (ns) Switching Loss (mJ) Figure 13. Switching Loss vs. Collector Current Gate Resistance, RG (Ω) Collector Current, IC (A) 共 8 页,第 3 页 Pb Free Product NCE10G120 http://www.ncepower.com Typical Performance Characteristics (Continued) Figure 10. Switching Loss vs. Gate Resistance Switching Time (ns) Switching Loss (mJ) Figure 9. Switching Characteristics vs. Gate Resistance Gate Resistance, RG (Ω) Gate Resistance, RG (Ω) Figure 15. SOA Characteristics Collector Current, IC(A) Gate-Emitter Voltage (V) Figure14. Gate Charge Characteristics Gate Charge, Qg (nC) Collector Emitter Voltage, (V) Collector Current, IC(A) Figure 16. Turn-Off SOA Collector Emitter Voltage, (V) 共 8 页,第 4 页 Pb Free Product http://www.ncepower.com NCE10G120 Typical Performance Characteristics (Continued) Thermal Response (Zthjc) Figure 17. Transient Thermal Impedance of IGBT Rectanguar Pulse Duration (sec) 共 8 页,第 5 页 Pb Free Product http://www.ncepower.com Mechanical Dimensions (continued) 共 8 页,第 6 页 NCE10G120 Pb Free Product http://www.ncepower.com NCE10G120 注意: ■新洁能产品说明书中所描述的信息,在没有特殊声明的条件下,不可使用在要求高可靠性的电路中。 例如人体供能系统,航天控制系统或其他应用中。在这种高可靠性应用下,可能会导致严重的物理或 者材料的损坏。当设计电路中用到新洁能的产品时,请就近咨询代理商。 ■新洁能对客户在超出说明书中提到的额定值使用产品所造成的损失不承担任何责任,即使是瞬间的使 用(例如最大额定值,工作环境范围或 其他参数) 。 ■新洁能对所有产品在单独应用的情况下保证它的性能﹑典型应用和功能符合说明书中的条件。当使用 在客户的产品和设备中,以上条件我们不做保证。为了了解产品在单独使用下无法估测的情况,新洁 能建议客户在使用过程中,必须不断的评估和反复的测试实际应用在产品和设备中的问题。 ■新洁能一直在努力为客户提供高质量,高可靠性的产品。但是,所有的半导体产品都有一定的失效概 率,这些失效概率可能会导致一些事故的发生,危及人的生命,也可能导致产生浓烟或者大火,招致 财产受到损失。当你在设计产品时,必须采用安全指标,这样可以避免事故的发生。这些措施不仅仅 是为了保护电路,电路错误预防所做的安全的设计,多余的设计和结构的设计。 ■新洁能的所有产品(包括技术参数和服务)受到当地出口法规的控制,这种产品在没有得到有关部门 的同意是不允许出口。 ■没有新洁能预先的许可,这些出版物不能以任何的形式或方式重印或传送,包括影印和记录,或任何 信息存储和检索系统。 ■在文中所列的信息(包括电路图和电路参数)仅做泛例参考;这并不是批量生产的保证。新洁能保证 说明书中所提到的任何信息都是准确、 可靠的,但是不对其使用在任何违反知识产权或者第三方其他 产权的情况作保证。 ■所有产品由于工艺/技术的提高等所做的信息变动,新洁能不做通知。当在设计电路时,请参照将要使 用的产品的交付说明书。 ■这份说明书所提供的信息时间是在2010年3月。对规格书中信息的更改我们不做通知。 ATTENTION: ■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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NCE believes information herein is accurate and reliable, but no guarantees are made or implied 共 8 页,第 7 页 Pb Free Product http://www.ncepower.com NCE10G120 regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. ■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice. ■ 共 8 页,第 8 页