MA4GC6773 77 GHz GaAs SP2T PIN Diode Switch Features n n n n n n n n 77 Ghz Frequency Response 1.2 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion Qualified for Automotive Environments Description The MA4CG6773 is a 77 GHz SP2T Switch made from Gallium Arsenide PIN Diodes, and semi-insulating GaAs Substrate designed for Automotive Applications. These diodes are fabricated on OMCVD epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitics. These Diodes are fully passivated with Silicon Nitride and have an additional layer of Polymide for scratch protection. This protective coating prevents damage to the junction during automated or manual handling. These devices are suitable for pick and place insertion. Each RF Port contains DC blocking Capacitors and a D.C. Bias Network consisting of High Impedance Lines and RF bypass capacitors. This device has 100 um square gold plated bonding pads at all RF and DC ports. RF and DC Ground Backside Gold Plating allows conventional chip bonding techniques using 80Au/20Sn Solder, Indalloy Solder, or Electrically Conductive Silver Epoxy. V 2.00 Applications This highly reliable, very low parasitic SP2T is useable through higher millimeter frequencies for exceptional loss to isolation ratio and 2nS switching speed performance. Typical Applications include Transceivers, Automotive Cruise Control Systems, and Radiometry Switch Functions. Absolute Maximum Ratings1 Parameter Value Operating Temperature -25 °C to +85 °C Storage Temperature -65 °C to +150 °C D.C. Bias Current +15 mA per Diode D. C. Reverse Bias Voltage -15 Volts @ -10 µA RF C.W. Incident Power Mounting Temperature + 23 dBm C.W. +300 °C for 10 seconds 1. Exceeding any of these values may result in permanent damage Outline Drawing Dim. Are in µm 77 GHz GaAs SP2T PIN Diode Switch MA4GC6773 V 2.00 Electrical Specifications, TA = + 25 °C Parameters Units Minimum Typical Maximum Specification Specification Specification Forward Voltage, +Vf V 1.15 1.25 Leakage Current, -Ir nA -200 -20 DC Slope Resistance Ω 1.40 Bias Conditions +10 mA per Diode -15 V per Diode 4.8 6.4 +10 mA & +11 mA per Diode Reference Millimeter Wave Data @ F = 77 GHz, TA = + 25 °C Parameters Conditions MA4GC6773 Bias Condition Avg. -5 V +10 mA Comments Insertion Loss (J1-J2) (J1-J3) -1.2 dB -1.2 dB B2 B3 B3 B2 RF Input Power = 0 dBm Isolation (J1-J2) (J1-J3) -24 dB -24 dB B3 B2 B2 B3 RF Input Power = 0 dBm VSWR (J1-J2) (J1-J3) -15 dB -15 dB B2 B3 B3 B2 RF Input Power = 0 dBm Low Loss Condition Only (Reflective in Isolation Mode) 10% - 90% RF Voltage 2 nS 0 to 5 V TTL 0 to 5 V TTL Switching Speed Switching Speed is Driver Dependent DC to Millimeter Wave State Truth Table for the MA4GC6773 DC Bias Conditions Millimeter Wave State B2 B3 J1-J2 J1-J3 -5 Volts +10 mA Low Loss Isolation +10 mA -5 Volts Isolation Low Loss 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 77 GHz GaAs SP2T PIN Diode Switch MA4GC6773 V 2.00 Assembly Considerations Solder Die Attach The following precautions should be observed for successful assembly of the die. All die attach and bonding methods should be compatible with gold metal. Solder which does not scavenge gold, such as 80 Au/20 Sn or Indalloy #2 is recommended. Do not expose die to a temperature greater than 300 °C for more than 10 seconds. Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. Electro-Static Sensitivity The MA4GC Series of GaAs PIN Diode Switches are ESD, Class 1 Sensitive. The proper ESD handling procedures must be used. General Handling The protective polymer coating on the active areas of these die provides scratch and impact protection, particularly for the metal airbridge which contacts the diode’s anode. Die should primarily be handled with vacuum pickups, or alternatively with plastic tweezers. Electrically Conductive Expoxy Die Attach Assembly can be preheated to approximately 125 °C. Use a controlled thickness of approximately 2 mils for best electrical conductivity and lower thermal resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer’s schedule. For extended cure times, temperatures should be kept below 150 °C. Wire / Ribbon Bonding Wedge Thermo compression bonding may be used to attach ribbons to the RF bonding pads. Gold Ribbons should be 1/4 by 3 mil sq. for lowest inductance. The same 1/4 by 3 mil sq. gold ribbon or 1 mil dia. Gold Wire is recommended for all DC pads. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020