GaAs SPDT Switch DC - 4 GHz MASW4030G V 2.00 Features ● ● ● ● ● ● Absorbtive or Reflective Excellent Intermodulation Products Excellent Temperature Stability Fast Switching Speed, 3 ns Typical Ultra Low DC Power Consumption Independent Bias Control Guaranteed Specifications* –55˚C to +85˚C Frequency Range DC – 4.0 GHz Insertion Loss Isolation VSWR DC – 1.0 GHz DC – 2.0 GHz DC – 4.0 GHz DC Absorbtive Mode DC Reflective Mode DC DC – – – – 0.6 dB Max 0.8 dB Max 1.0 dB Max 1.0 GHz 2.0 GHz 2.0 GHz 4.0 GHz 60 dB Min 50 dB Min 42 dB Min 40 dB Min DC – 1.0 GHz DC – 2.0 GHz DC – 4.0 GHz 1.2:1 Max 1.2:1 Max 1.5:1 Max Operating Characteristics 50 Ω Nominal Impedance Switching Characteristics tRISE, tFALL (10/90% or 90/10% RF) tON, tOFF (50% CTL to 90/10% RF) Transients (In-Band) 3 ns Typ 6 ns Typ 20 mV Typ Input Power for 1dB Compression** Control Voltages (Vdc) 0/–5 0.05 GHz 24 dBm 0.5 – 4.0 GHz 30 dBm 0/–8 25 dBm Typ 33 dBm Typ Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP2 0.5 GHz 62 0.5 – 4.0 GHz 68 IP3 39 dBm Typ 46 dBm Typ Control Voltages (Complementary Logic) VINLow 0 to –0.2 V @ 9 µA Max VINHi –5 V @ 25 µA Typ to –8 V @ 0.75 µA Max Die Size 0.043" x 0.041" x 0.010" (1.08mm x 1.03mm x 0.25mm) * Previously MA4GM202MTC **All specifications apply with 50 Ω impedance connected to all RF ports, and –5 Vdc control voltages. ***Loss changes 0.0025 dB/°C Typical Performance @ +25°C*** Handling, Mounting and Bonding Procedure MASW4030G V 2.00 Handling Precautions Schematic Permanent damage to the MASW4030G may occur if the following precautions are not adhered to: A. Cleanliness — The MASW4030G should be handled in a clean environment. DO NOT attempt to clean unit after the MASW4030G is installed. B. Static Sensitivity — All chip handling equipment and personnel should be DC grounded. C. Transient — Avoid instrument and power supply transients while bias is applied to the MASW4030G. Use shielded signal and bias cables to minimize inductive pick-up. D. Bias — Apply voltage to either of the complementary control ports only when the other is grounded. No port should be allowed to “float”. E. General Handling — It is recommended that the MASW4030G chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. Wire Bonding A. Ball or wedge with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels achieve reliable wirebonds. Mounting The MASW4030G is back-metallized with Pd/Ni/Au(100/1,000/10,000Å) metallization. It can be diemounted with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat before attachment. B. Wirebonds should be started on the chip and terminated on the package. GND bonds should be as short as possible; at least three and no more than four bond wires from ground pads to package are recommended. Eutectic Die Attach: A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255°C and a tool temperature of 265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290°C. Maximum Ratings B. DO NOT expose the MASW4030G to a temperature greater than 320°C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: A. Apply a minimum amount of epoxy and place the MASW4030G into position. A thin epoxy fillet should be visible around the perimeter of the chip. A. Control Value (A or B): –8.5 Vdc B. Max Input RF Power: +34 dBm (500 MHz– 4 GHz) C. Storage Temperature: –65°C to +175°C D. Max Operating Temperature: +175°C BondPad Dimensions — Inches (mm) RF1, RF2 B. Cure epoxy per manufacturer’s recommended schedule. C. Electrically conductive epoxy may be used but is not required. 0.005 x 0.008 (0.125 x 0.200) RFA1, RFB1 0.008 x 0.004 (0.200 x 0.100) RFA2, RFB2 0.004 x 0.004 (0.100 x 0.100) A, B, Ac, Bc 0.008 x 0.004 (0.200 x 0.100) Truth Table Control Inputs Condition of BondPad Condition of Switch Absorbtive SPDT Reflective A B T G1 G2 RF1 RF2 VINLOW VINHI GND GND — On Off VINHI VINLOW GND GND — Off On VINLOW VINHI — GND GND On Off