New Product UH20FCT& UHB20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction TO-263AB TO-220AB • Ultrafast recovery times • Soft recovery characteristics K • Low switching losses, high efficiency 2 2 3 1 UH20FCT 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) UHB20FCT PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 2 • High forward surge capability K HEATSINK • Solder dip 260 °C, 40 s (for TO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency power factor correctors, switching mode power supplies, freewheeling diodes and secondary dc-to-dc rectification application. PRIMARY CHARACTERISTICS IF(AV) 10 A x 2 VRRM 300 V IFSM 180 A trr 25 ns VF 0.83 V TJ max. 175 °C MECHANICAL DATA Case: TO-220AB and TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UH20FCT UHB20FCT UNIT VRRM 300 V Maximum average forward rectified current (see Fig.1) per device per diode IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 180 A TJ, TSTG - 55 to + 175 °C Maximum repetitive peak reverse voltage Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode (1) Document Number: 88964 Revision: 13-May-08 IF = 5.0 A IF = 5.0 A TJ = 25 °C TJ = 125 °C IF = 10 A IF = 10 A TJ = 25 °C TJ = 125 °C SYMBOL VF TYP. MAX. 0.96 0.77 - 1.0 0.83 1.2 0.90 UNIT V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product UH20FCT& UHB20FCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT IR 0.5 25 5 150 µA TJ = 25 °C TJ = 125 °C Maximum reverse current per diode (2) VR = 300 V Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 25 ns Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 50 A/µs, VR = 30 V, Irr = 0.1 IRM trr 28 35 ns IF = 10 A, dI/dt = 200 A/µs, VR = 200 V, TJ = 125 °C per diode S 0.36 - - IRM 7.0 - A Qrr 160 - nC tfr 150 - ns Typical softness factor (tb/ta) Typical reverse recovery current Typical stored charge IF = 10 A, dI/dt = 80 A/µs, VFR = 1.1 x VF max. Typical forward recovery time per diode Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL UH20FCT UHB20FCT UNIT RθJC 2.0 2.0 °C/W ORDERING INFORMATION PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB UH20FCT-E3/4W 1.88 4W 50/tube Tube TO-263AB UHB20FCT-E3/4W 1.38 4W 50/tube Tube TO-263AB UHB20FCT-E3/8W 1.38 8W 800/reel Tape and reel 24 12 20 10 11 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 16 12 8 9 D = 0.2 8 D = 1.0 D = 0.1 7 6 5 T 4 3 4 2 0 0 1 0 25 50 75 100 125 150 175 D = 0.8 D = 0.5 D = 0.3 0 2 4 6 D = tp/T tp 8 10 12 Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88964 Revision: 13-May-08 New Product UH20FCT& UHB20FCT Vishay General Semiconductor 1000 Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) 200 TJ = TJ Max. 10 ms Single Half Sine-Wave 180 160 140 120 100 80 60 40 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 20 1 10 10 100 20 30 40 50 60 70 80 90 100 Number of Cycles Percent of Rated Peak Reverse Voltage (%) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Typical Reverse Leakage Characteristics Per Diode 1000 TJ = 125 °C 10 TJ = 175 °C TJ = 25 °C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode Document Number: 88964 Revision: 13-May-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product UH20FCT& UHB20FCT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88964 Revision: 13-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1