VISHAY SD103AW-V-GS08

SD103AW-V/103BW-V/103CW-V
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• The low forward voltage drop and fast
switching make it ideal for protection of
e3
MOS devices, steering, biasing, and coupling diodes for fast switching and low
logic level applications.
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems.
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
17431
Mechanical Data
• This diode is also available in the MiniMELF case
with the type designations LL103A to LL103C,
DO35 case with the type designations SD103A to
SD103C and SOD323 case with type designations
SD103AWS-V to SD103CWS-V.
• For general purpose applications.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case: SOD123 Plastic case
Weight: approx. 10.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
Type Marking
Remarks
SD103AW-V
SD103AW-V-GS18 or SD103AW-V-GS08
S6
Tape and Reel
SD103BW-V
SD103BW-V-GS18 or SD103BW-V-GS08
S7
Tape and Reel
SD103CW-V
SD103CW-V-GS18 or SD103CW-V-GS08
S8
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Peak reverse voltage
Part
Symbol
Value
Unit
SD103AW-V
VRRM
40
V
SD103BW-V
VRRM
30
V
SD103CW-V
VRRM
20
V
Ptot
4001)
mW
IFSM
2
A
Power dissipation
(Infinite heat sink)
Single cycle surge
10 µs square wave
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
1251)
°C
Tstg
- 55 to +
1501)
°C
Valid provided that electrodes are kept at ambient temperature
Document Number 85681
Rev. 1.4, 18-Sep-06
www.vishay.com
1
SD103AW-V/103BW-V/103CW-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Max
Unit
SD103AW-V
IR
5
µA
VR = 20 V
SD103BW-V
IR
5
µA
VR = 10 V
SD103CW-V
IR
5
µA
VF
370
mV
600
mV
VR = 30 V
Leakage current
Min
Typ.
Forward voltage drop
IF = 20 mA
IF = 200 mA
VF
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
pF
Reverse recovery time
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr
10
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
1000
IR - Reverse Current (µA)
I F - Forward Current (mA)
Tamb = 125 °C
100
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
50 °C
1
25 °C
0.1
5
10 15 20 25 30 35 40 45 50
VR - Reverse Voltage (V)
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
5
100
tp = 300 ms
4
C D - Diode Capacitance (pF)
I F - Forward Current (A)
75 °C
10
20084
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
duty cycle = 2 %
3
2
1
0
0
18489
0.5
1.0
VF - Forward Voltage (V)
www.vishay.com
10
1
1.5
Figure 2. Typical High Current Forward Conduction Curve
2
100 °C
0.01
0
1.0
VF - Forward Voltage (V)
18488
100
0
18491
10
20
30
40
50
VR - Reverse Voltage (V)
Figure 4. Typical Capacitance vs. Reverse Voltage
Document Number 85681
Rev. 1.4, 18-Sep-06
SD103AW-V/103BW-V/103CW-V
Vishay Semiconductors
VR - Reverse Voltage (V)
50
40
100 mA
30
200 mA
I F = 400 mA
20
10
0
0
100
200
Tamb - Ambient Temperature (°C)
18492
Figure 5. Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
Package Dimensions in mm (Inches): SOD123
17432
Document Number 85681
Rev. 1.4, 18-Sep-06
www.vishay.com
3
SD103AW-V/103BW-V/103CW-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85681
Rev. 1.4, 18-Sep-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
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