VISHAY BAT43W-V-GS08

BAT42W-V/BAT43W-V
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• These diodes feature very low turn-on voltage and fast switching. These devices are
protected by a PN junction guard ring e3
against excessive voltage, such as electrostatic discharges
• These diodes are also available in the DO35 case
with the type designations BAT42 to BAT43 and in
MiniMELF SOD80 case with the type designations
LL42 to LL43
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
17431
Mechanical Data
Case: SOD123 Plastic case
Weight: approx. 10.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
Type Marking
Remarks
BAT42W-V
BAT42W-V-GS18 or BAT42W-V-GS08
L2
Tape and Reel
BAT43W-V
BAT43W-V-GS18 or BAT43W-V-GS08
L3
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Power dissipation
V
200
500
1)
tp < 10 ms, Tamb = 25 °C
IFSM
1)
Tamb = 65 °C
Ptot
tp < 1 s, δ < 0.5, Tamb = 25 °C
1)
Unit
30
IFRM
Tamb = 25 °C
Repetitive peak forward current
1)
Value
VRRM
1)
Forward continuous current
Surge forward current
Symbol
IF
4
2001)
mA
mA
A
mW
Valid provided that electrodes are kept at ambient temperature
Document Number 85661
Rev. 1.5, 27-Feb-07
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1
BAT42W-V/BAT43W-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
3001)
K/W
Thermal resistance junction to ambient air
Tj
125
°C
Ambient operating temperature range
Tamb
- 55 to + 125
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Junction temperature
1)
Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
1)
Leakage current
1)
Forward voltage
Part
IR = 100 µA (pulsed)
Symbol
Min
V(BR)
30
Max
Unit
V
VR = 25 V
IR
0.5
VR = 25 V, Tj = 100 °C
IR
100
µA
IF = 200 mA
VF
1000
mV
µA
IF = 10 mA
BAT42W-V
VF
400
mV
IF = 50 mA
BAT42W-V
VF
650
mV
IF = 2 mA
BAT43W-V
VF
IF = 15 mA
BAT43W-V
VF
Diode capacitance
VR = 1 V, f = 1 MHz
CD
Reverse recovery time
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ω
trr
Rectification efficieny
RL = 15 kΩ, CL = 300 pF,
f = 45 MHz, VRF = 2 V
ηv
1)
Typ.
260
330
mV
450
mV
7
pF
5
80
ns
%
Pulse test tp < 300 µs, tp/T < 0.02
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
I F - Forward Current (mA)
Ptot - Power Dissipation (mW)
250
200
150
100
50
0
0
18442
50
100
150
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
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2
125 °C
- 40 °C
10
25 °C
1
0.1
0.01
200
Tamb - Ambient Temperature (°C)
100
0
18443
200
400
600 800 1000 1200
VF - Instantaneous Forward Voltage (mV)
Figure 2. Typical Reverse Characteristics
Document Number 85661
Rev. 1.5, 27-Feb-07
BAT42W-V/BAT43W-V
Vishay Semiconductors
14
CD - Diode Capacitance (pF)
IR - Reverse Leackage Current (µA)
1000
125 °C
100
100 °C
75 °C
10
50 °C
1
25 °C
0.1
12
10
8
6
4
2
0
0.01
0
18444
10
20
30
40
VR - Reverse Voltage (V)
0
50
Figure 3. Typical Reverse Characteristics
18445
5
10
15
20
25
30
VR - Reverse Voltage (V)
Figure 4. Typical Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): SOD123
17432
Document Number 85661
Rev. 1.5, 27-Feb-07
www.vishay.com
3
BAT42W-V/BAT43W-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85661
Rev. 1.5, 27-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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