SL02 / 03 / 04 Vishay Semiconductors Small Signal Schottky Diodes Features • • • • • For surface mounted applications Low-profile package e3 Ideal for automated placement Low power loss, high efficiency High temperature soldering: 260 °C/10 seconds at terminals • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17249 Mechanical Data Case: JEDEC DO-219AB (SMF) Plastic case Polarity: Color band denotes cathode end Weight: approx. 15 mg Packaging codes-options: G18 / 10 k per 13" reel (8 mm tape), 50 k/box G08 / 3 k per 7" reel (8 mm tape), 30 k/box Parts Table Part Ordering code Marking Remarks SL02 SL02-GS18 or SL02-GS08 S2 Tape and Reel SL03 SL03-GS18 or SL03-GS08 S3 Tape and Reel SL04 SL04-GS18 or SL04-GS08 S4 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Document Number 85687 Rev. 1.6, 13-Apr-05 Test condition Part Symbol Value Unit SL02 VRRM 20 V SL03 VRRM 30 V SL04 VRRM 40 V SL02 VRMS 14 V SL03 VRMS 21 V SL04 VRMS 28 V www.vishay.com 1 SL02 / 03 / 04 Vishay Semiconductors Parameter Test condition Maximum DC blocking voltage Maximum average forward rectified current Part Symbol Value Unit SL02 VDC 20 V SL03 VDC 30 V SL04 VDC 40 V IF(AV) 1.1 A IFSM 40 A Ttp = 109 °C Peak forward surge current 8.3 ms single half sine-wave Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 180 K/W Maximum operating junction temperature TJ 125 °C Storage temperature range TSTG - 55 to 150 °C Thermal resistance junction to ambient air2) Mounted on epoxy substrate with 3 x 3 mm Cu pads (≥ 40 μm thick) 2) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Instaneous forward voltage at Part Symbol Typ. Max Unit SL02 VF Min 0.360 0.385 V SL03 VF 0.395 0.43 V SL04 VF 0.450 0.51 SL02 VF 0.420 V SL03 VF 0.450 V SL04 VF 0.530 SL02 IR 0.51) Typical instantaneous forward voltage 1.1 A Maximum DC reverse current at TA = 25 °C rated DC blocking voltage 1) V 250 μA TA = 100 °C SL02 IR 8.0 mA TA = 25 °C SL03 IR 130 μA mA TA = 100 °C SL03 IR 6.0 TA = 25 °C SL04 IR 20 μA TA = 100 °C SL04 IR 6.0 mA Pulse test: 300 μs pulse width, 1 % duty cycle www.vishay.com 2 V Document Number 85687 Rev. 1.6, 13-Apr-05 SL02 / 03 / 04 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 TJ = 100°C Instantaneous Reverse Current (μA) Average Forward Current (A) 1.5 1.0 0.5 TJ = 50°C 100 TJ = 25°C 10 1 0 10 0 30 70 50 90 110 130 150 Lead temperature (°C) Figure 1. Forward Current Derating Curve 150 100 SL02 50 SL04 8 6 4 2 10 TJ = 75°C 0.1 TJ = 50°C 0.01 TJ = 25°C 0.001 Pulse Width = 300μs 1% Duty Cycle 0 12 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.9 1.0 0.8 Instantaneous Forward Voltage (V) 17383 Reverse Voltage (V) Figure 2. Typical Junction Capacitance Instantaneous Forward Current (A) TJ = 100°C 1 0.0001 10 Figure 5. Typical Instantaneous Forward Characteristics - SL03 10000 10 TJ = 100°C 1 TJ = 100°C 1000 TJ = 75°C 0.1 TJ = 50°C 0.01 TJ = 25°C 0.001 Pulse Width = 300μs 1% Duty Cycle 0.0001 0 17381 10 Instantaneous Forward Current (A) Junction Capacitance (pF) 200 0 25 20 Reverse Voltage (V) Figure 4. Typical Reverse Current Characteristics - SL02 250 17380 15 10 5 0 17382 Instantaneous Reverse Current (μ A) 17379 TJ = 75°C 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Figure 3. Typical Instantaneous Forward Characterisics - SL02 Document Number 85687 Rev. 1.6, 13-Apr-05 100 TJ = 50°C 10 TJ = 25°C 1 0.1 1.0 Instantaneous Forward Voltage (V) TJ = 75°C 0 17384 5 10 15 20 25 30 35 Reverse Voltage (V) Figure 6. Typical Reverse Current Characteristics - SL03 www.vishay.com 3 SL02 / 03 / 04 Vishay Semiconductors Package Dimensions in mm (Inches) 0.85 (0.033) 0.35 (0.014) 3.9 (0.152) 3.5 (0.137) 5 0.16 (0.006) 0.99 (0.039) 0.97 (0.038) Z 5 Cathode Band Top View Detail Z enlarged 1.9 (0.074) 1.7 (0.066) 1.2 (0.047) 0.8 (0.031) 0.10 max 2.9 (0.113) 2.7 (0.105) ISO Method E Mounting Pad Layout 1.6 (0.062) 1.3 (0.051) 1.4 (0.055) 17247 www.vishay.com 4 Document Number 85687 Rev. 1.6, 13-Apr-05 SL02 / 03 / 04 Vishay Semiconductors Blistertape for SMF PS 18513 Document Number 85687 Rev. 1.6, 13-Apr-05 www.vishay.com 5 SL02 / 03 / 04 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85687 Rev. 1.6, 13-Apr-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1