FAIRCHILD BC516

BC516
BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high
current gain at currents to 1mA.
• Sourced from process 61.
TO-92
1
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
30
Units
V
VCBO
VEBO
Collector-Base Voltage
40
V
Emitter-Base Voltage
10
IC
Collector Current
- Continuous
V
1
A
PD
Total Power Dissipation
TA = 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
625
mW
-55 ~ +150
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
VCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = 2mA, IB = 0
Min.
30
Typ.
Max.
Units
V
VCBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
40
V
VEBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
10
V
ICBO
Collector Cutoff Current
VCB = 30V, IE = 0
hFE
DC Current Gain
IC = 20mA, VCE = 2V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 0.1mA
VBE(on)
Base-Emitter On Voltage
IC = 10mA, VCE = 5V
fT
Current Gain Bandwidth Product (2)
IC = 10mA, VCE = 5V, f = 100MHz
100
nA
30,00
0
200
1
V
1.4
V
MHZ
NOTES:
1. Pulse Test Pulse Width ≤ 2%
2. fT = IhfeI · ftest
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
Max.
200
Units
°C/W
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC516
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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As used herein:
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1