2N6518 2N6518 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC (max)=625mW • Complement to 2N6515 TO-92 1 PNP Epitaxial Silicon Transistor 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -250 Units V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage IC -5 V Collector Current -500 mA IB Base Current -250 mA PC Collector Power Dissipation 625 mW 5 mW/°C TJ Derate above 25°C Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C • Refer to 2N6520 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter * Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -250 BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -250 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 ICBO Collector Cut-off Current VCB= -150V, IE=0 IEBO Emitter Cut-off Current VEB= -4V, IC=0 hFE * DC Current Gain VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA 35 50 50 45 25 Max. Units V V V -50 nA -50 nA 300 220 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA -0.30 -0.35 -0.50 -1 V V V V VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA -0.75 -0.85 -0.90 V V V VBE (on) Base-Emitter On Voltage VCE= -10V, IC= -100mA fT * Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=20MHz -2 V 200 MHz Cob Output Capacitance CEB Emitter-Base Capacitance VCB= -20V, IE=0, f=1MHz 6 pF VEB= -0.5V, IC=0, f=1MHz 100 tON pF Turn On Time VBE (off)= -2V, VCC= -100V IC= -50mA, IB1= -10mA 200 ns tOFF Turn Off Time VCC= -100V, IC= -50mA IB1=IB2=10mA 3.5 ns 40 * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 2N6518 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1