Photo transistor ST-1KLA (Unit : mm) DIMENSION The ST-1KLA is a high-sensiivity silicon phototransistor mounted in durable, hermetically sealed TO-18 metal can which provide years of reliable performance, even under demanding conditions such as use outdoors. FEATURES • Durable • High reliability in demending environments • Two leads APPLICATIONS • Smoke detector • Infrared sensors • Optical switches • Optical detectors (Ta=25°C) MAXIMUM RATINGS Symbol Rating Unit C-E Voltage VCEO 40 V E-C Voltage VECO 4 V IC 50 mA Parameter Collector current Collector power dissipation Pc 150 mW Operating Temperature Topr -35~+125 °C Storage Temperature Tstg -50~+150 °C Soldering temperature *1 Tsol 260 °C Notes : *1. For MAX.5 seconds at the position of 2mm from the package ELECTRO-OPTICAL CHARACTERISTICS Parameter Collector dark current Light current Conditions ICEO VCEO=10V IL VCE=10V,200lx VCE(sat) Ic=5mA, 2000lx Rise time tr Fall time tf Vcc=10V,Ic=mA, RL=100Ω C-E Saturation voltage Switching speeds Symbol (Ta=25°C, unless otherwise noted) Min Typ Max Unit 1 200 nA 6.0 16 mA 0.2 0.4 V - 8 - ns - 10 - ns 1.5 Spectral sensitivity λ Peak Wavelength λp - 880 - nm nm Half angle Θ∆ - ±15 - deg. 500~1050 Notes : *2. Irradiance by CIE standard light source A (2850K tungsten lamp) 1/2 Photo transistor ST-1KLA Collector Current Vs. C-E Voltage Collector dark current(ICEO ) Collector current(I C 1) (㎃) Collector Dark Current Vs. Ambient Temperature L=400lx Ta=25℃ 8 L=300lx 6 L=200lx 4 L=100lx 2 0 10 1 100 10 -1 0 2 4 6 8 (V) Collector power dissipatoin Vs. Ambient Temperature (%) (㎽) 200 150 100 50 0 20 40 60 80 100 120 (℃) Ambient temperature(Ta) 0 Relative Sensitivity Vs. Wavelength Spectral Sensitivity Collector power dissipation(P C ) 10 2 0 100 80 60 40 20 0 400 500 600 700 800 900 1000 1100(㎚) Wavelength( λ) 30 60 90 120 150 (℃) Ambient temperature(Ta) Radiant Pattern Switching time Vs. Load resistance (㎲) 10 3 +20 + 60 0 +4 -20 -4 0 50 0 -80 -100 +80 10 2 0 -6 10 1 0 +1 00 Response time tr, tf Angle(deg.) 100 10 0 10 -1 10 0 10 1 10 2 Road Resistance(R L ) VCC IC RL VOUT Input 90% Output 10% tr 50 Relative intensity(%) (Ω) Switching time measuremenst circuit IFP 50 tf 2/2 100