Photo transistors KODENSHI KOREA CORP ST-1CL3H The ST-1CL3H is a high sensitivity NPN silicon [Unit : mm] Dimensions phototransistor mounted in a 3Φ Low-cost ceramic φ package, designed for use as low-cost detector array in consumer and industrial applications. Features · Compact (Φ3mm) φ · Wide angular response φ · Low-cost Applications · Optical counters · Optical detectors · Floppy disk drives ② ① [TA = 25°C] Absolute Maximum Ratings Parameter Symbol Rating Unit C-E Voltage VCEO 20 V E-C Voltage VECO 5 V Collector current IC 20 mA Collector power dissipation PC 75 mW Topr. -20~+90 °C Tstg. -30~+100 °C Tsol 260 °C Operating temp Storage temp Soldering temp *1 ② ① · Encoders *1. For MAX.5 seconds at the position of 2mm from the package [TA = 25°C] Electro-Optical Characteristics Parameter Collector dark current Symbol Conditions Min. Typ. Max. Unit. ICEO VCEO=10V - 1 200 nA 0.08 1.5 - mA 0.15 0.4 V IL Light current VCE=3V, 1,000lx *2 VCE(sat) IC=0.2mA, 2,000lx - Rise time tr 2.5 - µsec tf VCC=10V, IC=1mA RL=100Ω - Fall time - 3.8 - µsec C-E saturation voltage Switching speeds *2 Spectral sensitivity λ 480~1,000 Peak wavelength λp - 880 - nm Half Angle ∆Θ - ±50 - degrees *2. Color temp = 2856K standard tungsten lamp -1- nm Photo transistors KODENSHI KOREA CORP ST-1CL3H Collector current Vs. Collector-Emitter voltage Dark current Vs. Ambient temperature (mA) Ta=25℃ 4 Ev=2,000㏓ 3 2 Ev=1,000㏓ 1 VCE=3V Ta=25℃ 10 Collector dark current(ICEO ) Ev=3,000㏓ Collector current(IC ) Collector current(IC ) (㎃) 5 Collector current Vs. Illuminance 2 101 10 0 Ev=500㏓ 0 0 10-1 1 10 (V) 2 4 6 8 Collector-Emitter Voltage(VCE) Relative sensitivity Vs. Wavelength 10 2 10 3 10 4 Illminance(E V ) (Lux) VCE=10V 10 2 10 1 10 0 10 -1 20 40 60 80 100 120 (℃) Ambient temperature(Ta) 0 Switching time Vs. Load resistance Radiant Pattern (㎲) (%) Angle(deg.) 40 20 +60 102 VCC = 10V IC =1㎃ Ta = 25℃ 10 1 tf tr td 100 10 2 10 3 10 4 10 5 Road Resistance(R L ) Collector power dissipation Vs. Ambient temperature p (㎽) 100 Power dissipation(PD) ※ Switching time measurement circuit IFP 80 V CC IC 60 Input 40 Output 20 90% 10% tr 0 VOUT RL 0 tf 20 40 60 80 100 (℃) Ambient temperature(Ta) -2- (Ω) -20 Ta=25℃ -4 0 50 0 100 0 400 500 600 700 800 900 1000 1100(㎚) Wavelength( λ) 0 +80 60 0 +4 +100 80 103 -80 -100 Response time tr, tf 100 +20 0 -6 Spectral Sensitivity Ta=25℃ 50 50 Relative intensity(%) 100