VISHAY 12F20

12F(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 12 A
FEATURES
• High surge current capability
RoHS
• Stud cathode and stud anode version
COMPLIANT
• Wide current range
• Types up to 1200 V VRRM
• RoHS compliant
• Designed and qualified for industrial and consumer level
TYPICAL APPLICATIONS
DO-203AA (DO-4)
• Battery charges
• Converters
PRODUCT SUMMARY
• Power supplies
IF(AV)
12 A
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
VALUES
12
A
TC
144
°C
19
A
50 Hz
265
60 Hz
280
IF(RMS)
IFSM
I2 t
VRRM
UNITS
A
50 Hz
351
60 Hz
320
Range
100 to 1200
V
- 65 to 175
°C
TJ
A2 s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
12F(R)
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
VR(BR), MINIMUM
AVALANCHE
VOLTAGE
V (1)
10
100
150
-
20
200
275
-
40
400
500
500
60
600
725
750
80
800
950
950
100
1000
1200
1150
120
1200
1400
1350
IRRM MAXIMUM
AT TJ = 175 °C
mA
12
Note
(1) Avalanche version only available from V
RRM 400 V to 1200 V
Document Number: 93487
Revision: 29-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
1
12F(R) Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 12 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum on-repetitive peak
reverse power
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
PR(1)
10 µs square pulse, TJ = TJ maximum
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2√t
for fusing
I2√t
VALUES
UNITS
12
A
144
°C
19
A
7
K/W
No voltage
reapplied
265
100 % VRRM
reapplied
225
No voltage
reapplied
280
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
A
235
351
320
250
A2s
226
t = 0.1 to 10 ms, no voltage reapplied
3510
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.77
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
0.97
A2√s
V
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
10.70
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
6.20
Ipk = 38 A, TJ = 25 °C, tp = 400 µs rectangular wave
1.26
V
VALUES
UNITS
Maximum forward voltage drop
mΩ
VFM
Note
(1) Available only for avalanche version, all other parameters the same as 12F
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
SYMBOL
TEST CONDITIONS
TJ
- 65 to 175
Maximum storage temperature range
TStg
- 65 to 200
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Allowable mounting torque
Lubricated threads
Approximate weight
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2
2
K/W
Not lubricated threads
Case style
°C
See dimensions - link at the end of datasheet
For technical questions, contact: [email protected]
0.5
1.5 + 0 - 10 %
N·m
13
lbf · in
1.2 + 0 - 10 %
N·m
10
lbf · in
7
g
0.25
oz.
DO-203AA (DO-4)
Document Number: 93487
Revision: 29-Sep-08
12F(R) Series
Standard Recovery Diodes Vishay High Power Products
(Stud Version), 12 A
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.33
0.26
120°
0.41
0.44
90°
0.53
0.58
60°
0.78
0.81
30°
1.28
1.29
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
180
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
12F(R) Series
RthJC (DC) = 2.0 K/W
170
Conduction Angle
160
150
30°
60°
90°
120° 180°
140
2
4
6
8
10
12
12F(R) Series
RthJC (DC) = 2.0 K/W
170
160
Conduction Period
150
30°
60°
90°
120°
140
180°
DC
130
14
0
4
8
12
16
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
0
180
14
180°
120°
90°
60°
30°
12
10
10
K/
W
12
K/W
th
SA
6
=8
K/
W
15
K/W
K/
W
-D
elt
aR
20 K
/W
RMS Limit
8
R
20
6
30 K/W
Conduction Angle
4
12F(R) Series
TJ = 175°C
2
0
0
2
4
6
8
10
12
Average Forward Current (A)
14
0
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93487
Revision: 29-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
3
12F(R) Series
Vishay High Power Products Standard Recovery Diodes
Maximum Average Forward Power Loss (W)
(Stud Version), 12 A
20
R
DC
180°
120°
90°
60°
30°
16
12
8K
/W
thS
A =
6K
/W
10 K
/W
12 K
/W
15 K
/W
-D
elta
R
20 K/W
8 RMS Limit
Conduction Period
4
30 K/W
12F(R) Series
TJ = 175°C
0
0
4
8
12
16
Average Forward Current (A)
0
20
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
250
1000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
225
200
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
175
150
125
12F(R) Series
TJ = 25°C
TJ = 175°C
100
10
12F(R) Series
1
100
1
10
0
100
1
250
225
200
175
150
125
100
0.01
12F(R) Series
0.1
1
4
5
6
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance ZthJC (K/W)
Peak Half Sine Wave Forward Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 175°C
No Voltage Reapplied
Rated VRRM Reapplied
3
Instantaneous Forward Voltage (V)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
275
2
10
Steady State Value
R thJC = 2.0 K/W
(DC Operation)
1
12F(R) Series
0.1
0.001
0.01
0.1
1
10
Pulse Train Duration (s)
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
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For technical questions, contact: [email protected]
Document Number: 93487
Revision: 29-Sep-08
12F(R) Series
Standard Recovery Diodes Vishay High Power Products
(Stud Version), 12 A
ORDERING INFORMATION TABLE
Device code
12
F
R
120
M
1
2
3
4
5
1
-
Current rating: Code = IF(AV)
2
-
F = Standard device
3
-
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
5
-
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diodes)
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93487
Revision: 29-Sep-08
http://www.vishay.com/doc?95311
For technical questions, contact: [email protected]
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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