VISHAY SD400N/R24

SD400N/R Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 400 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
RoHS
• High surge current capabilities
COMPLIANT
• Stud cathode and stud anode version
• Standard JEDEC types
• Compression bonded encapsulations
DO-205AB (DO-9)
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
IF(AV)
• Power supplies
400 A
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
VALUES
UNITS
480
A
TC
120
°C
50 Hz
8250
60 Hz
8640
50 Hz
340
60 Hz
311
Range
1600 to 2400
V
- 40 to 190
°C
630
IF(RMS)
IFSM
I2 t
VRRM
TJ
A
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
16
1600
1700
20
2000
2100
24
2400
2500
SD400N/R
Document Number: 93548
Revision: 17-Apr-08
For technical questions, contact: [email protected]
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
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1
SD400N/R Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 400 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
IF(AV)
IF(RMS)
IFSM
TEST CONDITIONS
180° conduction, half sine wave
I2√t
120
°C
480
A
100
°C
630
8250
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
8640
A
6940
Sinusoidal half wave,
initial TJ = TJ maximum
7270
340
311
241
100 % VRRM
reapplied
220
t = 0.1 to 10 ms, no voltage reapplied
3400
t = 8.3 ms
Maximum I2√t for fusing
A
t = 10 ms
t = 10 ms
I2t
UNITS
400
DC at 110 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
0.80
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
0.85
kA2s
kA2√s
V
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ = TJ maximum
0.55
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.51
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.62
V
VALUES
UNITS
Maximum forward voltage drop
mΩ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
SYMBOL
TEST CONDITIONS
TJ
- 40 to 190
Maximum storage temperature range
TStg
- 55 to 200
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.11
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Maximum allowed
mounting torque ± 10 %
K/W
Not-lubricated threads
Approximate weight
Case style
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2
°C
See dimensions (link at the end of datasheet)
For technical questions, contact: [email protected]
27
Nm
250
g
DO-205AB (DO-9)
Document Number: 93548
Revision: 17-Apr-08
SD400N/R Series
Standard Recovery Diodes Vishay High Power Products
(Stud Version), 400 A
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.020
0.013
120°
0.023
0.023
90°
0.029
0.031
60°
0.042
0.044
30°
0.073
0.074
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Maximum Allowable Case Temperature (°C)
190
SD400N/ R Series
RthJC (DC) = 0.11 K/ W
180
170
160
Conduction Angle
150
140
130
120
60°
30°
90°
120°
180°
110
0
50 100 150 200 250 300 350 400 450
190
SD400N/ R Series
RthJC (DC) = 0.11 K/ W
180
170
160
Conduction Period
150
140
130
120
90°
60°
110
120°
30°
180°
DC
100
0
100
200
300
400
500 600
700
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
550
e lta
-D
RMS Limit
W
K/
.04
0.4
K/
W
R
300
=0
350
K/
W
0.
3K
/W
A
400
0.
2
W
K/
180°
120°
90°
60°
30°
450
R thS
500
1
0.
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
250
0.6
K/ W
200
150
Conduction Angle
100
SD400N/ R Series
TJ = 190°C
50
1 K/
W
1.8 K/
W
0
0
50 100 150 200 250 300 350 400
10 30 50
Average Forward Current (A)
70 90 110 130 150 170 190
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93548
Revision: 17-Apr-08
For technical questions, contact: [email protected]
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3
SD400N/R Series
Vishay High Power Products Standard Recovery Diodes
800
/W
4K
.0
0.2
K/
W
-D
ta
el
500
K/
W
=0
600
0.
1
SA
DC
180°
120°
90°
60°
30°
700
R th
R
Maximum Average Forward Power Loss (W)
(Stud Version), 400 A
0.3
400 RMSLimit
K/
W
0.4
300
K/ W
0.6
K/ W
Conduction Period
200
1 K/
SD400N/ R Series
TJ = 190°C
100
W
1.8 K/
W
0
0
100
200 300
400
500
600
Average Forward Current (A)
10 30 50 70 90 110 130 150 170 190
700
Maximum Allowable Ambient Temperature (°C)
8000
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At Any Rated Load Condition And With
Rated VRRMApplied Following Surge.
Initial TJ = 190°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
7000
6000
5000
4000
3000
SD400N/ R Series
2000
1
10
100
9000
8000
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 190°C
No Voltage Reapplied
Rated VRRM Reapplied
6000
5000
4000
3000
2000
SD400N/ R Series
1000
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10000
SD400N/ R Series
1000
TJ = 25°C
TJ = 190°C
100
0.5
1
1.5
2
2.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
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For technical questions, contact: [email protected]
Document Number: 93548
Revision: 17-Apr-08
SD400N/R Series
Transient Thermal Impedance Z thJC (K/ W)
Standard Recovery Diodes Vishay High Power Products
(Stud Version), 400 A
1
Steady State Value:
RthJC = 0.11 K/ W
(DC Operation)
0.1
0.01
SD400N/ R Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
ORDERING INFORMATION TABLE
Device code
SD
40
0
N
24
P
C
1
2
3
4
5
6
7
1
-
Diode
2
-
Essential part number
3
-
0 = Standard recovery
4
-
N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
7
-
C = Ceramic housing
For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93548
Revision: 17-Apr-08
http://www.vishay.com/doc?95301
For technical questions, contact: [email protected]
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Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
DIMENSIONS in millimeters (inches)
Ceramic housing
19 (0.75)
MAX.
4 (0.16)
MAX.
39 (1.53)
MAX.
9.5 (0.37) MIN.
DIA. 8.5 (0.33) NOM.
C.S. 35 mm2
(0.054 s.i.)
210 (8.27)
± 10 (0.39)
DIA. 27.5
(1.08) MAX.
82 (3.23)
MIN.
SW 32
16 (0.63)
MAX.
21 (0.82)
MAX.
3/4"-16UNF-2A*
Document Number: 95301
Revision: 09-Apr-08
*For metric device: M16 x 1.5
contact factory
For technical questions, contact: indmodul[email protected]
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000