Inchange Semiconductor Product Specification 2SA1289 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3253 ·Low saturation voltage ·Short switching time APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters;converters ·Power amplification ·Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A ICM Collector current-Peak -7 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1289 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V Collector-emitter saturation voltage IC=-2.5A; IB=-0.125A -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-2V Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS hFE Classifications Q R S 70-140 100-200 140-280 2 MIN TYP. 70 MAX UNIT 280 100 MHz Inchange Semiconductor Product Specification 2SA1289 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SA1289 Silicon PNP Power Transistors 4