Inchange Semiconductor Product Specification 2SA1291 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage. ·Short switching time. ·Complement to type 2SC3255 APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters, converters ·Power amplifier ·High-speed switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -12 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1291 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -80 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.25A -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-2V Transition frequency IC=-1A ; VCE=-5V fT B 70 280 100 MHz 0.1 μs 0.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=5A IB1=- IB2=0.25A VCC=20V;RL=6.67Ω hFE Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SA1291 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3