SavantIC Semiconductor Product Specification 2SB521 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -8 V -5 A 43 W IC Collector current PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB521 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA , IC=0 -8 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.4 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.15A -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -1 µA IEBO Emitter cut-off current VEB=-8V; IC=0 -1 µA hFE DC current gain IC=-2.5A ; VCE=-2V Transition frequency IC=-0.2A ; VCE=-5V fT CONDITIONS 2 MIN TYP. MAX UNIT 50 7 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SB521