SAVANTIC 2SD388

SavantIC Semiconductor
Product Specification
2SD388
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For use in power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
7
V
8
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD388
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
140
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=0.6A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=0.6A
2.5
V
ICBO
Collector cut-off current
VCB=150V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
50
hFE-2
DC current gain
IC=5A ; VCE=5V
20
Transition frequency
IC=1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
9
MAX
UNIT
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD388