BAV19WS-V/20WS-V/21WS-V Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • For general purpose e3 • These diodes are also available in other case styles including: the DO35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT23 case with the type designation BAS19 BAS21 and the SOD123 case with the type designation BAV19W-V - BAV21W-V • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 20145 Mechanical Data Case: SOD323 Plastic case Weight: approx. 5.0 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Type differentiation Ordering code Type Marking Remarks BAV19WS-V VR = 100 V BAV19WS-V-GS18 or BAV19WS-V-GS08 A8 Tape and Reel BAV20WS-V VR = 150 V BAV20WS-V-GS18 or BAV20WS-V-GS08 A9 Tape and Reel BAV21WS-V VR = 200 V BAV21WS-V-GS18 or BAV21WS-V-GS08 AA Tape and Reel Document Number 85726 Rev. 1.4, 31-Jul-06 www.vishay.com 1 BAV19WS-V/20WS-V/21WS-V Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Continuous reverse voltage Repetitive peak reverse voltage Part Symbol Value Unit BAV19WS-V VR 100 V BAV20WS-V VR 150 V BAV21WS-V VR 200 V BAV19WS-V VRRM 120 V BAV20WS-V VRRM 200 V BAV21WS-V VRRM 250 V Forward continuous current Tamb = 25 °C IF 2501) mA Rectified current (average) half wave rectification with resist. load Tamb = 25 °C IF(AV) 2001) mA Repetitive peak forward current f ≥ 50 Hz, θ = 180 °, Tamb = 25 °C IFRM 6251) mA Surge forward current t < 1 s, Tj = 25 °C IFSM 1 A Power dissipation Tamb = 25 °C Ptot 200 1) mW 1) Valid provided that leads are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol Value Unit RthJA 6501) K/W Tj 1501) °C Junction temperature Tstg Storage temperature range - 65 to + 1501) °C 1) Valid provided that leads are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Leakage current Max Unit IF = 100 mA Test condition Part Symbol VF Min Typ. 1.00 V IF = 200 mA VF 1.25 V VR = 100 V BAV19WS-V IR 100 nA VR = 100 V, Tj = 100 °C BAV19WS-V IR 15 µA VR = 150 V BAV20WS-V IR 100 nA VR = 150 V, Tj = 100 °C BAV20WS-V IR 15 µA VR = 200 V BAV21WS-V IR 100 nA VR = 200 V, Tj = 100 °C BAV21WS-V IR 15 µA Ω Dynamic forward resistance IF = 10 mA Diode capacitance VR = 0, f = 1 MHz CD 1.5 pF Reverse recovery time IF = 30 mA, IR = 30 mA, Irr = 3 mA, RL = 100 Ω trr 50 ns www.vishay.com 2 rf 5 Document Number 85726 Rev. 1.4, 31-Jul-06 BAV19WS-V/20WS-V/21WS-V Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified T j = 100 ° C 100 25 ° C 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 10 IF - Forward Current (mA) 100 Figure 4. Dynamic Forward Resistance vs. Forward Current 1000 0.2 I R ( Tj ) / I R (25 °C) - Leakage Current 0.3 I O , I F - Admissible Forward Current (A) 1 18861 Figure 1. Forward Current vs. Forward Voltage DC current I F Current (rectif.) I O 0.1 0 0 30 60 90 120 100 10 Figure 2. Admissible Forward Current vs. Ambient Temperature 0.1 0 18862 100 50 0 0 18864 Figure 3. Admissible Power Dissipation vs. Ambient Temperature Document Number 85726 Rev. 1.4, 31-Jul-06 T j = 25 ° C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (°C) 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature (°C) 2.0 1.8 CD - Diode Capacitance (pF) 150 20 Figure 5. Leakage Current vs. Junction Temperature 250 200 Reverse Voltage BAV19WS-V VR = 100 V BAV20WS-V V R = 150 V BAV21WS-V V R = 200 V 1 150 Tamb - Ambient Temperature (°C) 18859 Ptot - Admissible Power Dissipation (W) 10 1 VF - Forward Voltage (V) 18858 100 rf - Dynamic Forward Resistance (Ω) I F - Forward Current (mA) 1000 18863 1 10 100 VR - Reverse Voltage (V) Figure 6. Capacitance vs. Reverse Voltage www.vishay.com 3 BAV19WS-V/20WS-V/21WS-V Vishay Semiconductors 0.1 (0.004) max 0.10 (0.004) 0.15 (0.006) 0.8 (0.031) 1.15 (0.045) Package Dimensions in mm (Inches): SOD323 0.25 (0.010) min 1.95 (0.077) 1.60 (0.063) foot print recommendation: 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.6 (0.024) 1.1 (0.043) 2.85 (0.112) 2.50 (0.098) 1.5 (0.059) 0.20 (0.008) 0.40 (0.016) cathode bar Document no.: S8-V-3910.02-001 (4) Rev. 03 - Date: 08.November 2004 17443 www.vishay.com 4 Document Number 85726 Rev. 1.4, 31-Jul-06 BAV19WS-V/20WS-V/21WS-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85726 Rev. 1.4, 31-Jul-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1