SSC BAV99

BAV99
Surface-mount Dual Switching Diodes
Voltage range 75 Volts
Power Dissipation 350 mWatts
SOT-23
FEATURES
0.020(0.51)
0.015(0.37)
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
0.055(1.40)
0.047(1.19)
MECHANICAL DATA
0.041(1.05)
0.047(0.89)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
Case: SOT-23, Molded plastic
Terminals: Matte tin plating
0.098(2.50)
0.083(2.10)
0.120(3.05)
0.104(2.65)
0.043(1.10)
0.035(0.89)
Polarity: See diagram
Marking: JE
Weight: 0.008 gram (approx.)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
Pb-free lead finish (second-level interconnect).
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
BAV99
Non-Repetitive Peak Reverse Voltage
VRM
100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectifier Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
Power Dissipation (Note 1)
Units
V
VRRM
VRWM
VR
75
V
VR(RMS)
IFM
Io
53
300
150
V
mA
mA
IFSM
2.0
1.0
A
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Pd
Rthja
350
357
mW
°C/W
TJ, TSTG
-65 to + 150
°C
Parameter
Symbol
Forward Voltage
IF=1.0mA
IF= 10mA
IF = 50mA
IF=150mA
VF
Min
-
Max
Units
0.715
0.855
1.0
1.25
V
Peak Reverse Current
VR=75V
VR=75V, Tj=150°C
VR=25V, TJ=150°C
VR=20V
Junction Capacitance
VR=0, f=1.0MHz
IR
-
2.5
50
30
25
Cj
2.0
trr
4.0
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Reverse recovery test conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω
Reverse Recovery Time (Note 2)
8/26/2004 Rev.1.01
www.SiliconStandard.com
uA
nA
pF
ns
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BAV99
RATINGS AND CHARACTERISTIC CURVES
FIG.1- FORWARD CHARACTERISTICS
10,000
100
IR, LEAKAGE CURRENT (nA)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10
1.0
0.1
FIG.2- LEAKAGE CURRENT VS JUNCTION
TEMPERATURE
1000
100
10
VR =20V
0.01
0
1
2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1
0
100
200
Tj, JUNCTION TEMPERATURE ( C)
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guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
8/26/2004 Rev.1.01
www.SiliconStandard.com
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