BAV99 Surface-mount Dual Switching Diodes Voltage range 75 Volts Power Dissipation 350 mWatts SOT-23 FEATURES 0.020(0.51) 0.015(0.37) Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance 0.055(1.40) 0.047(1.19) MECHANICAL DATA 0.041(1.05) 0.047(0.89) 0.080(2.05) 0.070(1.78) 0.024(0.61) 0.018(0.45) Case: SOT-23, Molded plastic Terminals: Matte tin plating 0.098(2.50) 0.083(2.10) 0.120(3.05) 0.104(2.65) 0.043(1.10) 0.035(0.89) Polarity: See diagram Marking: JE Weight: 0.008 gram (approx.) 0.006(0.15) 0.001(0.013) 0.024(0.61) 0.018(0.45) 0.007(0.178) 0.003(0.076) Dimensions in inches and (millimeters) Pb-free lead finish (second-level interconnect). MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol BAV99 Non-Repetitive Peak Reverse Voltage VRM 100 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectifier Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S Power Dissipation (Note 1) Units V VRRM VRWM VR 75 V VR(RMS) IFM Io 53 300 150 V mA mA IFSM 2.0 1.0 A Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Pd Rthja 350 357 mW °C/W TJ, TSTG -65 to + 150 °C Parameter Symbol Forward Voltage IF=1.0mA IF= 10mA IF = 50mA IF=150mA VF Min - Max Units 0.715 0.855 1.0 1.25 V Peak Reverse Current VR=75V VR=75V, Tj=150°C VR=25V, TJ=150°C VR=20V Junction Capacitance VR=0, f=1.0MHz IR - 2.5 50 30 25 Cj 2.0 trr 4.0 Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Reverse recovery test conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω Reverse Recovery Time (Note 2) 8/26/2004 Rev.1.01 www.SiliconStandard.com uA nA pF ns 1 of 2 BAV99 RATINGS AND CHARACTERISTIC CURVES FIG.1- FORWARD CHARACTERISTICS 10,000 100 IR, LEAKAGE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 10 1.0 0.1 FIG.2- LEAKAGE CURRENT VS JUNCTION TEMPERATURE 1000 100 10 VR =20V 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1 0 100 200 Tj, JUNCTION TEMPERATURE ( C) Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 8/26/2004 Rev.1.01 www.SiliconStandard.com 2 of 2