BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C Parameter Symbol Limits Unit Reverse voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA PD 225 mW RθJA 556 ℃/W TJ 150 ℃ TSTG -55-150 ℃ Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction temperature Storage temperature range 01/17/2008 Rev.1.00 www.SiliconStandard.com 1 BAV70 ELECTRICAL CHARACTERISTICS @TA=25°C Parameter Reverse Breakdown Voltage Symbol Min. VR 70 Typ. Max. Unit Conditions V IR=100μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1 V IF=50mA VF4 1.25 V IF=150mA Reverse current IR 2.5 μA VR=70V Capacitance between terminals CT 1.5 pF VR=0,f=1MHz Reverse recovery time t rr 6 ns Forward voltage 01/17/2008 Rev.1.00 www.SiliconStandard.com IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω 2 BAV70 TYPICAL CHARACTERISTICS Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 01/17/2008 Rev.1.00 www.SiliconStandard.com 3