Diodes SMD Type Schottky Diodes BAS170WS SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Schottky diode for high-speed switching +0.1 2.6-0.1 1.0max Circuit protection Voltage clamping 0.375 0.475 +0.05 0.1-0.02 High-level detecting and mixing Absolute Maximum Ratings Ta = 25 PARAMATER SYMBOL Repetitive peak reverse voltage VALUE Surge forward current (1) Thermal resistance junction to ambient air(1) 70 V Tamb = 25 70 mA IFSM tp < 1 s, Tamb = 25 600 mA Ptot Tamb = 25 200 mW 650 /W RèJA Junction temperature Operating temperature range UNIT IF VRM Forward continuous current Power Dissipation TEST CONDITION Tj 150 Ramb -55 to+125 Ts -55 to+125 Storage temperature range 1.valid provided that electrodes are kept at ambient temperature Electrical Characteristics Ta = 25 PARAMATER Reverse breakdown voltage Leakage current SYMBOL V(BR)R IR TEST CONDITION IR = 10 A(Pulse) MIN TYP MAX 70 UNIT V VR =50 V 0.1 A VR =70 V 10 A IF = 200 mA 375 410 V Forward voltage VF I < tief < F = 10 mA 705 750 V Forward voltage (1) VF VF = 15 mA 880 1000 mV Capacitance Ctot VR =0 V, f =1 MHz 1.5 2 pF t IF = 25 mA; 100 RF IE = 5 mA; f = 10 kHz 34 Charge carrier lifetime Differential forward resistance ps Note: 1.Pulse test: tp 300 s Marking Marking 73 www.kexin.com.cn 1