BAS170WS VISHAY Vishay Semiconductors Schottky Diodes Features • • • • Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing 17431 Mechanical Data Case: SOD-323 Plastic Package Weight: approx. 4 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAS170WS Ordering code Marking BAS170WS-GS18 or BAS170WS-GS08 Remarks 73 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage Symbol Value Unit VRRM 70 V Forward continuous current Tamb = 25 °C IF 70 mA Surge forward current tp < 1 s, Tamb = 25 °C IFSM 600 mA Power dissipation1) Tamb = 25 °C Ptot 200 mW Symbol Value Unit RθJA 650 °C/W 1) Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air1) Junction temperature Operating temperature range Storage temperature range 1) Tj 150 °C Tamb - 55 to + 125 °C TS - 55 to +150 °C Valid provided that electrodes are kept at ambient temperature Document Number 85653 Rev. 1.2, 18-Nov-03 www.vishay.com 1 BAS170WS VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min V(BR)R 70 Typ. Reverse breakdown voltage IR = 10 µA (pulsed) Leakage current VR =50 V VR = 70 V IR Forward voltage IF = 200 mA VF 375 Max Unit 0.1 µA 10 µA 410 V V IR I<tief<F = 10 mA VF 705 750 V Forward voltage1) IF = 15 mA VF 880 1000 mV Capacitance VR = 0 V, f = 1 MHz Ctot 1.5 2 pF τ 100 ps RF 34 Ω Charge carrier lifetime IF = 25 mA Differential forward resistance IE = 5 mA, f = 10 kHz 1) Pulse test; tp ≤ 300 µs www.vishay.com 2 Document Number 85653 Rev. 1.2, 18-Nov-03 BAS170WS VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 0.3 (0.012) 1.65 (0.065) ISO Method A 1.5 (0.059) 0.1 (0.004) max. 1.1 (0.043) 0.15 (0.006) max. 1.25 (0.049) max. 1.95 (0.076) 2.55 (0.100) 2.85 (0.112) Cathode Band 0.25 (0.010) min. 17443 Mounting Pad Layout 1.60 (0.062) 1.20 (0.047) 1.40 (0.055) 17444 Document Number 85653 Rev. 1.2, 18-Nov-03 www.vishay.com 3 BAS170WS VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85653 Rev. 1.2, 18-Nov-03