BAW56M3T5G Dual Switching Diode Common Anode The BAW56M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com 70 V DUAL COMMON ANODE SWITCHING DIODE Features • Reduces Board Space • This is a Halide−Free Device • This is a Pb−Free Device MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 75 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Peak Forward Surge Current CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 470 °C/W PD 640 mW 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 265 2.1 mW mW/°C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 0 3 1 2 1 SOT−723 CASE 631AA STYLE 4 AN M 1 AN = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† BAW56M3T5G SOT−723 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAW56M3/D BAW56M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Reverse Breakdown Voltage (I(BR) = 100 mA) Symbol Min Max Unit V(BR) 70 − V − − − 30 2.5 50 − 2.0 − − − − 715 855 1000 1250 − 6.0 Reverse Voltage Leakage Current IR (VR = 25 V, TJ = 150°C) (VR = 70 V) (VR = 70 V, TJ = 150°C) Diode Capacitance CD (VR = 0 V, f = 1.0 MHz) Forward Voltage VF (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) pF mV trr RL = 100 W mA ns 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) BAW56M3T5G Curves Applicable to Each Cathode 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 2. Forward Voltage 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 40 50 BAW56M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 1 e 2 E HE L b 2X 0.08 (0.0032) X Y C STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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