BAV70LT1G Dual Switching Diode Common Cathode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit PD 225 mW 1.8 mW/°C Peak Forward Surge Current ANODE 1 3 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C SOT−23 (TO−236) CASE 318 STYLE 9 1 2 Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W TJ, Tstg −55 to +150 Junction and Storage Temperature 3 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MARKING DIAGRAM A4 M G G 1 A4 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAV70LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BAV70LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 6 1 Publication Order Number: BAV70LT1/D BAV70LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Reverse Breakdown Voltage (I(BR) = 100 mA) Symbol Min Max Unit V(BR) 70 − V − − − 60 2.5 100 − 1.5 − − − − 715 855 1000 1250 − 6.0 Reverse Voltage Leakage Current (Note 3) IR (VR = 25 V, TJ = 150°C) (VR = 70 V) (VR = 70 V, TJ = 150°C) Diode Capacitance CD (VR = 0 V, f = 1.0 MHz) Forward Voltage VF (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) pF mV trr RL = 100 W mA ns 3. For each individual diode while second diode is unbiased. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) BAV70LT1G Curves Applicable to Each Anode 10 10 1 TA = 85°C IR, REVERSE CURRENT (mA) TA = 125°C TA = 55°C TA = 25°C TA = 150°C TA = −40°C 0.1 TA = −55°C 0.01 0.1 TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.9 1.0 0 10 Figure 2. Forward Voltage 20 30 40 50 VF, REVERSE VOLTAGE (V) Figure 3. Leakage Current 0.6 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.58 0.56 0.54 0.52 0.5 0.48 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance http://onsemi.com 3 7 8 60 70 BAV70LT1G PACKAGE DIMENSIONS SOT−23−3 (TO−236) CASE 318−08 ISSUE AN D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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