Philips Semiconductors Product specification TOPFET dual high side switch DESCRIPTION Monolithic dual channel high side protected power switch in TOPFET2 technology assembled in a 7 pin plastic surface mount package. BUK218-50DY QUICK REFERENCE DATA SYMBOL PARAMETER IL Nominal load current (ISO) SYMBOL PARAMETER VBG IL Tj RON Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance, Tj = 25˚C MIN. UNIT 8 A MAX. UNIT 50 16 150 40 V A ˚C mΩ APPLICATIONS General purpose switch for driving automotive lamps, motors, solenoids, heaters. FEATURES Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis Off-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM INPUT 1 BATT INPUT 2 STATUS LOAD 1 CONTROL & PROTECTION CIRCUITS GROUND LOAD 2 RG Fig.1. Elements of the TOPFET dual HSS with internal ground resistor. PINNING - SOT427 PIN 1 2 3 4 5 6 7 mb PIN CONFIGURATION DESCRIPTION load 1 ground input 1 connected to mb status input 2 load 2 battery SYMBOL mb B I1 L1 DUAL HSTF I2 L2 S G 1234567 Fig. 2. Fig. 3. CONVENTION Positive currents flow into pins, except for load and ground pins. May 2001 1 Rev 1.400 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VBG Continuous supply voltage IL Continuous load current per channel PD Total power dissipation Tstg CONDITIONS MIN. MAX. UNIT 0 50 V Tmb ≤ 135˚C - 8 A Tmb ≤ 25˚C - 83.3 W Storage temperature -55 175 ˚C Tj Continuous junction temperature1 -40 150 ˚C VGB Reverse battery voltages2 Continuous reverse voltage - 16 V VGB Peak reverse voltage - 32 V 3.2 - kΩ Application information RI, RS External resistors3 II Input and status currents Continuous input current -5 5 mA IS Continuous status current -5 5 mA II IS Repetitive peak input current Repetitive peak status current δ ≤ 0.1, tp = 300 µs δ ≤ 0.1, tp = 300 µs -50 -50 50 50 mA mA Inductive load clamping VBG = 13 V, IL = 8 A Non-repetitive clamping energy (one channel) Tj = 150˚C prior to turn-off - 150 mJ MIN. MAX. UNIT - 2 kV EBL to limit input, status currents ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ 1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values. The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). May 2001 2 Rev 1.400 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DY THERMAL CHARACTERISTIC SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT - 2.4 1.2 3 1.5 K/W K/W MIN. TYP. MAX. UNIT Thermal resistance1 Rth j-mb Junction to mounting base per channel both channels STATIC CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VBG Clamping voltages Battery to ground IG = 1 mA 45 55 65 V VBL VGL Battery to load per channel Ground to load2 IL = IG = 1 mA IL = 10 mA 50 18 55 23 65 28 V V IL = 10 A; tp = 300 µs 20 25 30 V 5.5 - 35 V - - 20 µA Tmb = 25˚C - 0.1 - 1 10 µA µA Tmb = 25˚C Supply voltage battery to ground 3 VBG Operating range - IB Currents Total quiescent current4 9 V ≤ VBG ≤ 35 V VLG = 0 V IL Off-state load current per VBL = VBG IG channel Operating current one channel on - 0.1 1.8 1 3 µA mA both channels on VBL = 0.5 V; Tmb = 85˚C 8 3.6 - 6 - mA A IG = -200 mA; tp = 300 µs 40 75 100 Ω 5 IL Nominal load current RG Effective internal ground resistance6 Resistances per channel RON RON On-state resistance On-state resistance VBG IL tp7 Tj 9 to 35 V 10 A 300 µs 25˚C - 30 40 mΩ 5A 150˚C 300 µs 25˚C - 60 50 80 60 mΩ mΩ 150˚C - 100 120 mΩ 5.5 V 1 Of the output Power MOS transistors. 2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 3 On-state resistance is increased if the supply voltage is less than 7 V. 4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads. 5 Per channel but with both channels conducting. Defined as in ISO 10483-1. 6 Equivalent of the parallel connected resistors for both channels. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. May 2001 3 Rev 1.400 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DY INPUT CHARACTERISTICS 5.5 V ≤ VBG ≤ 35 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT II Input current VIG = 5 V 20 60 160 µA VIG Input clamping voltage II = 200 µA 5.5 7 8.5 V VIG(ON) Input turn-on threshold voltage - 2.1 3 V VIG(OFF) Input turn-off threshold voltage 1.2 1.8 - V ∆VIG Input turn-on hysteresis 0.15 0.3 0.5 V II(ON) Input turn-on current VIG = 3 V - - 100 µA II(OFF) Input turn-off current VIG = 1.2 V 12 - - µA MIN. TYP. MAX. UNIT 1.5 2.5 3.5 V - 0.8 1.5 mA OPEN CIRCUIT DETECTION CHARACTERISTICS An open circuit load on either channel can be detected in the off-state. Refer to TRUTH TABLE. This feature requires external load pull-up to a positive supply voltage via a suitable resistor. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25˚C. SYMBOL PARAMETER CONDITIONS Open circuit detection VLG(OC) Load ground threshold voltage VBG ≥ 9 V IB(OC) Supply quiescent current per OC channel VBG = VLG = 16 V open circuit detected, other channel off -IL(OC) td(OC) Load ground current per VLG = 16 V - 200 300 µA channel VLG = 3.5 V - 22 40 µA Status delay time input low to status low - 65 100 µs - 10 - kΩ Application information Rext External load pull-up resistance Vext = 5 V per channel May 2001 4 Rev 1.400 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DY UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 2 4.2 5.3 V 0.1 0.5 1 V Undervoltage VBG(UV) Low supply threshold voltage1 ∆VBG(UV) Hysteresis Overvoltage VBG(OV) High supply threshold voltage2 35 40 45 V ∆VBG(OV) Hysteresis 0.4 1 2 V IBG(OV) Operating current per channel - 1 2 mA VBG = 45 V OVERLOAD PROTECTION CHARACTERISTICS Independent protection per channel. Refer to TRUTH TABLE. 5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS Overload protection VBL = VBG; tp = 300 µs Load current limiting VBG ≥ 8 V VBG = 5.5 V Short circuit load protection Tmb ≤ 125˚C prior to overload3 PD(TO) Overload power threshold for latched protection4 TDSC Characteristic time which determines trip time5 IL(lim) MIN. TYP. MAX. UNIT 18 15 30 27 42 42 A A 100 150 200 W - 200 500 µs 150 170 190 ˚C 3 10 20 ˚C Overtemperature protection Tj(TO) Threshold junction temperature ∆Tj(TO) Hysteresis6 1 Undervoltage sensors causes each channel to switch off and reset. 2 Overvoltage sensors causes each output channel to switch off to protect its load. 3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection. 4 SC protection for PD > PD(TO) is latched. Normal operation may only be resumed after the input is toggled low then high again. Normal operation is maintained as long as PD < PD(TO) and Tj < Tj(TO). 5 Trip time td sc varies with overload dissipation PD according to the exponential model formula td sc ≈ TDSC / LN[ PD / PD(TO) ]. 6 After cooling below the reset temperature the channel will resume normal operation. May 2001 5 Rev 1.400 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DY STATUS CHARACTERISTICS The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL PARAMETER CONDITIONS VSG VSG(LO) Status clamping voltage Status low voltage Status leakage current IS MIN. TYP. MAX. UNIT IS = 100 µA IS = 100 µA 5.5 - 7 0.7 8.5 0.9 V V IS = 250 µA VSG = 5 V - - 1.1 10 V µA - 0.1 1 µA 5 10 15 mA - 47 - kΩ Tmb = 25˚C Status saturation current1 IS(SAT) VSG = 5 V Application information External pull-up resistor RS TRUTH TABLE ABNORMAL CONDITIONS DETECTED INPUT SUPPLY LOAD 1 LOAD OUTPUT STATUS DESCRIPTION LOAD 2 1 2 UV OV OC SC OT OC SC OT 1 2 L L 0 X 0 X X 0 X X OFF OFF H both off & normal L L 0 X 1 X X X X X OFF OFF L both off, one/both OC or short to V+ L H 0 X 1 X X 0 0 0 OFF ON L one off & OC, other on & normal H L 0 0 0 0 0 0 0 0 ON OFF H one on & normal, other off & normal H H 0 0 0 0 0 0 0 0 ON ON H both on & normal H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage shutdown H X 0 0 0 1 X X X X OFF L one SC tripped H L 0 0 0 1 X 0 0 X OFF OFF L one SC tripped, other off & normal H H 0 0 0 1 X 0 0 0 OFF ON L one SC tripped, other on & normal H X 0 0 0 0 1 X X X OFF X L one OT shutdown H L 0 0 0 0 1 0 0 X OFF OFF L one OT shutdown, other off & normal H H 0 0 0 0 1 0 0 0 OFF L one OT shutdown, other on & normal X ON KEY TO ABBREVIATIONS L H X 0 1 logic low logic high don’t care condition not present condition present UV OV OC SC OT undervoltage overvoltage open circuit short circuit overtemperature 1 For example with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device. May 2001 6 Rev 1.400 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DY SWITCHING CHARACTERISTICS Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω per channel. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT td on During turn-on Delay time from input going high to 10% VL - 30 - µs dV/dton Rate of rise of load voltage 30% to 70% VL 0.5 1 2 V/µs t on Total switching time to 90% VL - 100 400 µs td off During turn-off Delay time from input going low to 90% VL - 20 - µs dV/dtoff t off Rate of fall of load voltage Total switching time 70% to 30% VL to 10% VL 0.5 - 1 40 2 200 V/µs µs MIN. TYP. MAX. UNIT CAPACITANCES Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V SYMBOL PARAMETER CONDITIONS Csg Status capacitance VSG = 5 V - 11 15 pF Cig Input capacitance VBG = 13 V - 15 20 pF Cbl Output capacitance VBL = 13 V - 265 375 pF per channel May 2001 7 Rev 1.400 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DY MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2-PAK); 7 leads (one lead cropped) SOT427 A A1 E D1 mounting base D HD 4 1 Lp 7 b e e e e e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.27 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-04-18 SOT427 Fig.4. SOT427 surface mounting package1, centre pin connected to mounting base. 1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g. For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18. May 2001 8 Rev 1.400 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DY DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS1 PRODUCT STATUS2 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. May 2001 9 Rev 1.400