Philips Semiconductors Product Specification TOPFET high side switch SMD version DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK215-50YT QUICK REFERENCE DATA SYMBOL PARAMETER IL Nominal load current (ISO) SYMBOL PARAMETER VBG IL Tj RON Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MIN. UNIT 9 A MAX. UNIT 50 20 150 38 V A ˚C m APPLICATIONS General controller for driving lamps, motors, solenoids, heaters. FEATURES Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Latched overtemperature protection Load current limiting Latched short circuit load protection Overvoltage and undervoltage shutdown with hysteresis Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET INPUT CONTROL & PROTECTION CIRCUITS LOAD RG GROUND Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT426 PIN PIN CONFIGURATION SYMBOL DESCRIPTION mb 1 Ground 2 Input I 3 (connected to mb) S 4 Status 5 Load L 4 5 Fig. 2. mb TOPFET HSS G 3 1 2 B Fig. 3. Battery June 2000 1 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version BUK215-50YT LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VBG Continuous supply voltage MIN. MAX. UNIT 0 50 V IL Continuous load current Tmb 95˚C - 20 A PD Total power dissipation Tmb 25˚C - 67 W Tstg Storage temperature Tj Continuous junction temperature1 Tsold Mounting base temperature -55 175 ˚C - 150 ˚C - 260 ˚C - 16 32 V V 3.2 - k -5 5 mA -50 50 mA - 150 mJ MIN. MAX. UNIT - 2 kV during soldering Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 to limit input, status currents Input and status II, IS Continuous currents II, IS Repetitive peak currents EBL 0.1, tp = 300 s Inductive load clamping IL = 10 A, VBG = 16 V Non-repetitive clamping energy Tj 150˚C prior to turn-off ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 k THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT - 1.52 1.86 K/W 4 Thermal resistance Rth j-mb Junction to mounting base - 1 For normal continuous operation. A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). 4 Of the output power MOS transistor. June 2000 2 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version BUK215-50YT STATIC CHARACTERISTICS Limits are at -40˚C SYMBOL Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Clamping voltages VBG Battery to ground IG = 1 mA 50 55 65 V VBL -VLG Battery to load Negative load to ground IL = IG = 1 mA IL = 10 mA 50 18 55 23 65 28 V V -VLG Negative load voltage1 IL = 10 A; tp = 300 s 20 25 30 V Supply voltage battery to ground 5.5 - 35 V VBG Operating range2 Currents IB IL 9V 3 Quiescent current VBG 16 V VLG = 0 V 4 Off-state load current 5 - 20 A - 0.1 - 2 20 A A Tmb = 25˚C - 0.1 1 A - 2 4 mA Tmb = 85˚C 9 - - A VBL = VBG IG Operating current IL = 0 A IL Nominal load current6 VBL = 0.5 V Resistances Tmb = 25˚C VBG IL tp7 Tmb RON On-state resistance 9 to 35 V 10 A 300 s 25˚C - 28 38 m RON On-state resistance 6V 10 A 300 s 150˚C 25˚C - 36 70 48 m m 150˚C - - 88 m 95 150 190 RG Internal ground resistance IG = 10 mA 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 On-state resistance is increased if the supply voltage is less than 9 V. 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 The measured current is in the load pin only. 5 This is the continuous current drawn from the supply with no load connected, but with the input high. 6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. June 2000 3 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version BUK215-50YT INPUT CHARACTERISTICS 9V VBG 16 V. Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS II Input current VIG Input clamping voltage VIG(ON) VIG(OFF) VIG MIN. TYP. MAX. UNIT VIG = 5 V 20 90 160 A II = 200 A 5.5 7 8.5 V Input turn-on threshold voltage - 2.4 3 V Input turn-off threshold voltage 1.5 2.1 - V - 0.3 - V - - 100 A 10 - - A Input turn-on hysteresis II(ON) Input turn-on current VIG = 3 V II(OFF) Input turn-off current VIG = 1.5 V STATUS CHARACTERISTICS The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSG Status clamping voltage IS = 100 A 5.5 7 8.5 V VSG Status low voltage IS = 100 A - - 1 V Tmb = 25˚C - 0.7 0.8 V Tmb = 25˚C - 0.1 15 1 A A 2 7 12 mA - 47 - IS IS Status leakage current Status saturation current1 VSG = 5 V VSG = 5 V Application information RS External pull-up resistor k 1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device. June 2000 4 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version BUK215-50YT UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS Limits are at -40˚C SYMBOL Tmb 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE. PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Low supply threshold voltage1 2 4.2 5.5 V Hysteresis - 0.5 - V 40 45 50 V - 1 - V Undervoltage VBG(UV) VBG(UV) Overvoltage VBG(OV) VBG(OV) High supply threshold voltage2 Hysteresis TRUTH TABLE ABNORMAL CONDITIONS DETECTED INPUT SUPPLY LOAD LOAD OUTPUT STATUS DESCRIPTION UV OV LC SC OT L X X X X X OFF H off H 0 0 X 0 0 ON H on & normal (LC not detected!) H 1 0 X X X OFF H supply undervoltage lockout H 0 1 X 0 0 OFF H supply overvoltage shutdown H 0 0 0 1 0 OFF L SC protection H 0 0 X X 1 OFF L OT shutdown KEY TO ABBREVIATIONS L H X 0 1 logic low logic high don’t care condition not present condition present UV OV LC SC OT undervoltage overvoltage low current or open circuit load short circuit overtemperature 1 Undervoltage sensor causes the device to switch off and reset. 2 Overvoltage sensor causes the device to switch off to protect its load. June 2000 5 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version BUK215-50YT OVERLOAD PROTECTION CHARACTERISTICS 5.5 V VBG 35 V, limits are at -40˚C Refer to TRUTH TABLE . SYMBOL IL(lim) Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. PARAMETER CONDITIONS Overload protection VBL = VBG Load current limiting VBG 9V MIN. TYP. MAX. UNIT 34 45 64 A Short circuit load protection VBL(TO) td sc Battery load threshold voltage1 Response time2 VBL > VBL(TO) VBG = 16 V 8 10 12 V VBG = 35 V 15 - 20 180 25 250 V s 150 170 190 ˚C MIN. TYP. MAX. UNIT Overtemperature protection Tj(TO) Threshold junction temperature3 SWITCHING CHARACTERISTICS Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 . SYMBOL PARAMETER CONDITIONS td on During turn-on Delay time from input going high to 10% VL - 40 60 s dV/dton Rate of rise of load voltage 30% to 70% VL - 0.35 1 V/ s t on Total switching time to 90% VL - 140 200 s During turn-off from input going low Delay time to 90% VL - 55 80 s dV/dtoff Rate of fall of load voltage 70% to 30% VL - 0.6 1 V/ s t off Total switching time to 10% VL - 85 120 s td off CAPACITANCES Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cig Input capacitance VBG = 13 V - 15 20 pF Cbl Output capacitance VBL = 13 V - 250 350 pF Csg Status capacitance VSG = 5 V - 11 15 pF 1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage.After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 2 Measured from when the input goes high. 3 Latched protection. After cooling below the threshold temperature the switch will resume normal operation only after the input has been toggled low. June 2000 6 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version BUK215-50YT IBG(ON) / mA 5 BUK215-50YT VBL II I VBG IS S VIG CLAMPING B TOPFET HSS IL OVERVOLTAGE SHUTDOWN 3 L OPERATING V IG = 5 V VLG G VSG RS UNDERVOLTAGE SHUTDOWN 4 IB 2 IG 1 QUIESCENT VIG = 0 V 0 0 RON / mOhm 20 30 40 VBG / V 50 60 70 Fig.7. Typical supply characteristics, 25 ˚C. IG = f(VBG); parameter VIG Fig.4. High side switch measurements schematic. (current and voltage conventions) 80 10 BUK215-50YT 40 RON / mOhm BUK215-50YT 38 typ . RON max 36 60 34 VBG = 6 V 32 30 40 28 9 V =< VBG =< 35 V 26 20 24 22 0 20 -50 0 50 O Tj / C 100 150 1 200 100 Fig.8. Typical on-state resistance,Tj = 25 ˚C. RON = f(VBG); condition IL = 10 A; tp = 300 s Fig.5. Typical on-state resistance, tp = 300 s. RON = f(Tj); parameter VBG; condition IL = 10 A 50 10 VBG / V IL / A BUK215-50YT 3.0 VBG / V IG / mA BUK215-50YT lL = 0 A >=8 40 30 7 6 2.5 5 2.0 9 V <= VBG <= 35 V lL l >>IL(TO) I L L(TO) 1.5 typ. 20 1.0 10 0.5 VBG = 50 V 0 0 0 1 VBL / V -50 2 Fig.6. Typical on-state characteristics, Tj = 25 ˚C. IL = f(Tj); parameter VBG; tp = 250 s June 2000 0 50 O Tj / C 100 150 200 Fig.9. Typical operating supply current. IG = f(Tj); parameters IL, VBG; condition VIG = 5 V 7 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version 100E-6 BUK215-50YT BUK215-50YT IB / A BUK215-50YT VBG(UV) / V 5.5 max. 10E-6 typ. 1E-6 4.5 typ. 100E-9 3.5 10E-9 on off 1E-9 2.5 100E-12 -50 0 50 O 100 150 -50 200 0 50 Tj / C Fig.10. Typical supply quiescent current. IB = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V 100E-6 IL / A Tj / OC 100 150 200 Fig.13. Supply undervoltage thresholds. VBG(UV) = f(Tj); conditions VIG = 5 V; VBL 2 V BUK215-50YT VBG(OV) / V 55 BUK215-50YT max. 10E-6 typ. max. 50 1E-6 on 100E-9 45 10E-9 off 1E-9 min. 40 00E-12 10E-12 35 -50 0 50 Tj / OC 100 150 200 -50 Fig.11. Typical off-state leakage current. IL = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V. 100E-6 IS / A 0 50 O Tj / C 100 150 200 Fig.14. Supply overvoltage thresholds. VBG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA VSG(LOW) / V BUK215-50YT BUK215-50YT 1 max. 10E-6 typ. 1E-6 0.5 100E-9 10E-9 1E-9 0 -50 0 50 O Tj / C 100 150 200 -50 Fig.12. Status leakage current. IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V June 2000 0 50 O Tj / C 100 150 200 Fig.15. Typical status low characteristic. VSG = f(Tj); conditions VBG 9 V, IS = 100 A 8 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version 3 VIG / V BUK215-50YT BUK215-50YT 7.50 BUK215-50YT VSG / V VIG / V = 7.40 5 7.30 2.5 7.20 7.10 2 VIG(ON) 7.00 VIG(OFF) 6.90 0 6.80 1.5 6.70 6.60 1 6.50 -50 0 50 O Tj / C 100 150 200 -50 Fig.16. Typical threshold voltage characteristic. VIG = f(Tj); condition 9V VBG 16V 7.50 VIG / V 0 50 O Tj / C 100 150 200 Fig.19. Typical status clamping voltage. VSG = f(Tj); condition IS = 100 A, VBG = 13V BUK215-50YT 20 IS / mA BUK215-50YT 7.40 7.30 15 7.20 7.10 10 7.00 6.90 6.80 5 6.70 6.60 0 6.50 -50 0 50 O Tj / C 100 150 0 200 IS / mA 4 6 8 10 VSG / V Fig.20. Typical status characteristic, Tj = 25 ˚C. IS = f(VSG); conditions VIG = VBG = 0V Fig.17. Typical input clamping voltage. VIG = f(Tj); condition II = 200 A, VBG = 13V 8 2 BUK215-50YT 65 VBG / V BUK215-50YT IG = 200 mA 6 60 1 mA 4 55 2 0 50 0 1 2 3 4 5 -50 VSG / V Fig.18. Typical status low characteristic, Tj = 25 ˚C. IS = f(VSG); conditions VIG = 5V, VBG = 13V,IL = 0A June 2000 0 50 Tj / O C 100 150 200 Fig.21. Typical battery to ground clamping voltage. VBG = f(Tj); parameter IG 9 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version VBL / V 65 BUK215-50YT IL / A BUK215-50YT 0 BUK215-50YT -5 -10 -15 IL = 60 -20 600 mA -25 1 mA -30 55 -35 -40 -45 -50 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 50 -50 0 50 O Tj / C 100 150 200 Fig.22. Typical battery to load clamping voltage. VBL = f(Tj); parameter IL; condition IG = 10mA IL / A 10 0.0 VBL / V Fig.25. Typical reverse diode characteristic. IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C BUK215-50YT 50 IL / A BUK215-50YT current limiting 45 40 VBL(TO) typ. 35 30 5 Short circuit trip = 150us 25 20 15 10 5 0 0 -30 -25 -20 -15 -10 0 VLG / V VLG / V 4 6 8 10 12 VBL / V 14 16 18 20 Fig.26. Typical overload characteristic, Tmb = 25 ˚C. IL = f(VBL); condition VBG = 16 V; parameter tp Fig.23. Typical negative load clamping. IL = f(VLG); conditions VIG = = 0V, Tj = 25˚C -10 2 BUK215-50YT 35 VBL(TO) / V BUK215-50YT max. 30 -15 25 -20 IL = 20 10 mA 15 10 A 10 typ. 25˚C min. -25 5 0 -30 -50 0 50 O Tj / C 100 150 0 200 Fig.24. Typical negative load clamping voltage. VLG = f(Tj); parameter IL; condition VIG = = 0V June 2000 10 20 VBG / V 30 40 50 Fig.27. Short circuit load threshold voltage. VBL(TO) = f(VBG); conditions -40˚C Tmb 150˚C 10 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version 10 nF CBL BUK215-50YT BUK215-50YT VBL(TO) / V 12.0 BUK215-50YT 11.8 11.6 11.4 11.2 11.0 1nF 10.8 10.6 10.4 10.2 10.0 100pF 0 10 20 VBL / V 30 40 -50 50 IG / mA 50 100 O 150 200 Tj / C Fig.28. Typical output capacitance. Tmb = 25 ˚C Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V 0 0 Fig.31. Typical short circuit load threshold voltage. VBL(TO) = f(Tj); condition VBG = 16 V Zth j-mb ( K / W ) 1e+01 BUK215-50YT BUK215-50YT D= -50 -100 1e+00 0.5 1e-01 0.2 0.1 0.05 0.02 -150 1e-02 -200 -20 -15 -10 -5 1e-03 1e-07 0 PD 0 tp D= 1e-03 T t T 1e-05 tp 1e-01 1e+02 t/s VBG / V Fig.29. Typical reverse battery characteristic. IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C Fig.32. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T BUK215-50YT IL(lim) / A 50 45 40 35 30 -50 0 50 O Tj / C 100 150 200 Fig.30. Typical overload current, VBL = 8V. IL = f(Tj); parameter VBG = 13V;t p = 300 s June 2000 11 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version BUK215-50YT MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2 -PAK); 5 leads (one lead cropped) SOT426 A A1 E D1 mounting base D HD 3 1 2 4 e e Lp 5 b e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.70 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 SOT426 Fig.33. SOT426 surface mounting package1, centre pin connected to mounting base. 1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g. For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18. June 2000 12 Rev 1.000 Philips Semiconductors Product Specification TOPFET high side switch SMD version BUK215-50YT DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS1 PRODUCT STATUS2 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. June 2000 13 Rev 1.000