VISHAY DG3001

DG3001/3002/3003
Vishay Siliconix
Low-Voltage Sub-Ohm SPST/SPDT MICRO FOOT® Analog Switch
DESCRIPTION
FEATURES
The DG3001/DG3002/DG3003 are monolithic CMOS
analog switches designed for high performance switching of
analog signals. The DG3001 and DG3002 are configured as
SPST switches, and the DG3003 is an SPDT switch.
Combining low power, high speed (tON: 47 ns, tOFF: 40 ns),
low on-resistance (rDS(on): 0.4 Ω ) and small physical size
(MICRO FOOT, 6-bump), the DG3001/DG3002/DG3003 are
ideal for portable and battery powered applications requiring
high performance and efficient use of board space.
• MICRO FOOT Chip Scale Package
(1.0 x 1.5 mm)
• Low Voltage Operation (1.8 V to 5.5 V)
• Low On-Resistance - rDS(on): 0.4 Ω
• Fast Switching - tON : 47 ns, tOFF: 40 ns
• Low Power Consumption
• TTL/CMOS Compatible
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
The DG3001/DG3002/DG3003 are built on Vishay
Siliconix’s low voltage JI2 process. An epitaxial layer
prevents latchup.
•
•
•
•
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
APPLICATIONS
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. For MICRO
FOOT analog switching products manufactured with tin/
silver/copper (Sn/Ag/Cu) device terminations, the lead
(Pb)-free “-E1” suffix is being used as a designator.
•
•
•
•
•
•
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
PCM Cards
PDA
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MICRO FOOT (6-Bump)
MICRO FOOT (6-Bump)
DG3002DB
DG3001DB
DG3003DB
V+
B1
A1
NO
(Source1)
COM
IN
B2
A2
COM
GND
B3
A3
COM
V+
B1
A1
NC
(Source1)
B2
A2
B3
A3
V+
B1
A1
NO
(Source1)
IN
B2
A2
COM
IN
B3
A3
COM
GND
GND
MICRO FOOT (6-Bump)
Device Marking: 3001
xxx = Date/Lot Traceability Code
A1 Locator
Device Marking: 3002
xxx = Date/Lot Traceability Code
XXX
3003
XXX
3002
XXX
3001
A1 Locator
NC (Source2)
Top View
Top View
Top View
A1 Locator
Device Marking: 3003
xxx = Date/Lot Traceability Code
TRUTH TABLE
Logic
NC
NO
0
ON
OFF
1
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72505
S-70853–Rev. C, 30-Apr-07
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1
DG3001/3002/3003
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG3001DB-T1
DG3002DB-T1
DG3003DB-T1
DG3001DB-T1-E1
DG3002DB-T1-E1
DG3003DB-T1-E1
MICRO FOOT: 6/-Bump 3 x 2, 0.5-mm pitch, 165 µm nom. bump height
(Eutectic, SnPb)
- 40 to 85 °C
MICRO FOOT: 6-Bump 3 x 2, 0.5-mm pitch,
238 µm nom. bump height (Lead (Pb)-free, Sn/Ag/Cu)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
Reference V+ to GND
- 0.3 to + 6
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC, COM)
± 250
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 400
Storage Temperature
(D Suffix)
Package Reflow Conditionsb
VPR (Eutectic)
215
(Eutectic)
220
IR/Convection
Power Dissipation (Packages)
6-Bump, 2 x 3 MICRO
V
mA
- 65 to 150
(Lead (Pb)-free)
c
Unit
°C
250
FOOTd
250
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. Refer to IPC/JEDEC (J-STD-020A)
c. All bumps soldered to PC Board.
d. Derate 3.1 mW/°C above 70 °C.
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Document Number: 72505
S-70853–Rev. C, 30-Apr-07
DG3001/3002/3003
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Symbol
Analog Signal Ranged
On-Resistanced
VNO, VNC,
VCOM
rON
rON
Flatness
rON Flatnessd
ΔrON
rON Matchd
Switch Off Leakage
Currentf
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Currentf
V+ = 3 V, ± 10 %,VIN = 0.4 V or 2.0 Ve
ICOM(on)
Limits
- 40 to 85 °C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
V+ = 2.7 V, VCOM = 1.5 V
INO, INC = 10 mA
Room
Full
0.4
0.7
0.8
V+ = 2.7 V, VCOM = 0 to V+
INO, INC = 10 mA
Room
0.1
0.2
Room
0.01
0.05
V+ = 3.3 V,
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
-1
- 10
1
10
Room
Full
Room
Full
-1
- 10
-1
- 10
1
10
1
10
2
Ω
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
d
Input Current
Dynamic Characteristics
Cin
IINL or IINH
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
Charge Injection
Off-Isolation
d
d
Crosstalkd
NO, NC Off Capacitanced
Channel-On Capacitanced
Power Supply
Positive Supply Range
Negative Supply Current
Full
VIN = 0 or V+
Full
VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF
Figure 1 and 2
Room
Full
Room
Full
td
Room
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
OIRR
RL = 50 Ω, CL = 5 pF, f = 100 kHz
XTALK
CNO(off)
CNC(off)
VIN = 0 or V+, f = 1 MHz
CON
V+
I+
0.4
5
-1
1
Room
pF
1
47
71
40
59
µA
ns
6
pC
64
Room
- 70
Room
- 70
Room
100
Room
340
2.7
VIN = 0 or V+
V
dB
pF
3.3
0.1
1.0
V
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72505
S-70853–Rev. C, 30-Apr-07
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DG3001/3002/3003
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.00
1.00
r ON − On-Resistance (Ω)
r ON – On-Resistance (Ω)
V+ = 3 V
IS = 10 mA
T = 25 °C
IS = 10 mA
1.75
1.50
1.25
V+ = 1.8 V
1.00
V+ = 2 V
0.75
V+ = 2.7 V
V+ = 3 V
0.50
V+ = 5 V
0.80
85 °C
0.60
25 °C
0.40
- 40 °C
0.20
0.25
V+ = 3.3 V
0.00
0
1
2
3
4
0.00
0.0
5
0.5
1.0
VCOM – Analog Voltage (V)
2.0
2.5
3.0
VCOM − Analog Voltage (V)
rON vs. VCOM and Supply Voltage
rON vs. Analog Voltage and Temperature
10000
100 mA
10 mA
I+ – Supply Current (A)
1000
I+ – Supply Current (nA)
1.5
V+ = 5 V
VIN = 0 V
100
10
V+ = 5 V
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
1
- 60
1 nA
- 40
- 20
0
20
40
60
80
100
10
100
Temperature (°C)
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
1000
250
V+ = 5 V
200
ICOM(on)
V+ = 5 V
Leakage Current (pA)
Leakage Current (pA)
150
100
ICOM(off)
INO(off), INC(off)
ICOM(off)
100
50
ICOM(on)
0
INO(off), INC(off)
- 50
- 100
- 150
- 200
10
- 60
- 40
- 20
0
20
40
60
80
Temperature (°C)
Leakage Current vs. Temperature
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100
- 250
0
1
2
3
4
5
VCOM, VNO, VNC – Analog Voltage (V)
Leakage vs. Analog Voltage
Document Number: 72505
S-70853–Rev. C, 30-Apr-07
DG3001/3002/3003
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
90
0
80
- 10
LOSS
tON V+ = 2 V
Loss, OIRR, XTALK (dB)
t ON, t OFF – Switching Time (ns)
100
70
tOFF V+ = 2 V
60
tON V+ = 3 V
50
40
tOFF V+ = 3 V
30
- 20
OIRR
- 40
- 50
- 70
10
- 80
- 40
- 20
0
20
40
60
80
V+ = 3 V
RL = 50 Ω
- 60
20
0
- 60
XTALK
- 30
- 90
100 K
100
1M
Temperature (°C)
10 M
100 M
1G
Frequency (Hz)
Switching Time vs. Temperature and Supply
Voltage
Insertion Loss, Off-Isolation, Crosstalk vs.
Frequency
3.0
250
Q – Charge Injection (pC)
V T – Switching Threshold (V)
200
2.5
2.0
1.5
1.0
150
V+ = 5 V
100
50
0
- 50
V+ = 3 V
V+ = 2 V
- 100
- 150
0.5
- 200
0.0
- 250
0
1
2
3
4
5
6
7
0
1
2
3
4
V+ – Supply Voltage (V)
VCOM – Analog Voltage (v)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
Document Number: 72505
S-70853–Rev. C, 30-Apr-07
5
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DG3001/3002/3003
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
VINL
V+
Switch Output
COM
NO or NC
Switch
Input
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x VOUT
Switch
Output
IN
Logic
Input
RL
300 Ω
GND
CL
35 pF
0V
tOFF
tON
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
= VCOM
V OUT
RL
R L + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
tr < 5 ns
tf < 5 ns
VINL
COM
NO
VNO
VINH
VO
NC
VNC
RL
300 Ω
IN
CL
35 pF
GND
VNC = VNO
VO
Switch
Output
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
ΔVOUT
V+
COM
NC or NO
VOUT
VOUT
+
Vgen
IN
CL = 1 nF
IN
On
On
Off
GND
Q = ΔVOUT x CL
VIN = 0 – V+
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
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Document Number: 72505
S-70853–Rev. C, 30-Apr-07
DG3001/3002/3003
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
IN
0 V, 2.4 V
COM
VCOM
Off Isolation = 20 log
RL
GND
VNO/ NC
Analyzer
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Document Number: 72505
S-70853–Rev. C, 30-Apr-07
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DG3001/3002/3003
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (3 x 2, 0.5 mm PITCH, 165 µm BUMP HEIGHT)
6 x Ø 0.150 ∼ 0.229
Note b
Solder Mask Ø ∼ Pad Dia. + 0.1
0.5
Silicon
0.5
A2
A
A1
Recommended Land Pattern
Bump
Note a
Index-Bump A1
Note c
3
2
1
b Diameter
A
XXX
3003
E
e
B
S
S
Top Side (Die Back)
e
D
Notes (Unless Otherwise Specified):
a. Bump is Eutectic 63/57 Sn/Pb or Lead (Pb)-free Sn/Ag/Cu.
b. Non-solder mask defined copper landing pad.
c. Laser Mark on silicon die back; no coating. Shown is not actual marking; sample only.
EUTECTIC (Sn/Pb)
LEAD (Pb)-FREE (Sn/Ag/Cu)
Inches
Millimetersa
Inches
Millimetersa
Dim
Min
Max
Min
Max
Dim
Min
Max
Min
Max
A
0.610
0.685
0.0240
0.0270
A
0.688
0.753
0.0271
0.0296
A1
0.140
0.190
0.0055
0.0075
A1
0.218
0.258
0.0086
0.0102
A2
0.470
0.495
0.0185
0.0195
A2
0.470
0.495
0.0185
0.0195
b
0.180
0.250
0.0071
0.0098
b
0.306
0.346
0.0120
0.0136
D
1.490
1.515
0.0587
0.0596
D
1.490
1.515
0.0587
0.0596
E
0.990
1.015
0.0390
0.0400
E
0.990
1.015
0.0390
0.0400
e
S
0.5 BASIC
0.245
0.258
0.0197 BASIC
0.0096
Notes:
a. Use millimeters as the primary measurement.
0.0101
e
S
0.5 BASIC
0.245
0.258
0.0197 BASIC
0.0096
0.0102
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72505.
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Document Number: 72505
S-70853–Rev. C, 30-Apr-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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