1 Bit, 10 dB, GaAs Digital Atten 0.02 - 2 GHz Features uator AT-358 T0-8-2 • CMOS Control Interface • Low Power Consumption 0.250 MIN (6.35) 0.200 TYP (5.08) 0.100 TYP (2.54) Guaranteed Specifications1 (From -55°C to +85°C) Frequency Range P7 0.187 MAX (4.75) P10 0.02 – 2.0 GHz Nominal Attenuation 2 0.400 (10.16) TYP 10 dB Attenuation Accuracy VSWR 0.02 – 2.0 GHz 0.02 – 1.0 GHz 0.02 – 0.5 GHz 0.02 – 0.2 GHz +/-0.5 dB Max +/-0.3 dB Max +/-0.2 dB Max +/-0.2 dB Max 0.02 – 2.0 GHz 0.02 – 1.0 GHz 0.02 – 0.5 GHz 0.02 – 0.2 GHz 1.9:1 Max 1.3:1 Max 1.3:1 Max 1.3:1 Max 0.02 – 2.0 GHz 0.02 – 1.0 GHz 0.02 – 0.5 GHz 0.02 – 0.2 GHz 2.7 dB Max 1.0 dB Max 0.9 dB Max 0.8 dB Max P4 0.200 TYP (5.08) P1 0.60 DIA (15.2 ) 0.018 ± 0.005 PIN DIA (0.46 ± 0.13) Reference Insertion Loss Operating Characteristics Impedance Bottom of Case is AC Ground Dimensions in ( ) are in mm. Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25) .xx = ± 0.02 (.x = ±0.5) 50 Ohms Nominal Switching Characteristics Ton, Toff (50% CTL to 90%/10% RF) Trise, Tfall (10%/90% or 90%/10% RF) Switching Transients (Unfiltered) 100 ns Typ 40 ns Typ 50 mV Typ Input Power for 1 dB Compression 0.5 – 2.0 GHz 0.05 GHz Functional Sc +24 dBm Typ +18 dBm Typ hematic (T +5V Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP2 IP3 0.5 – 2.0 GHz +58 +38 dBm Typ 0.05 GHz +54 +35 dBm Typ Bias Power Control Voltages Vin Low (0) Vin High (1) 0.0 to 1.5V @ 1µA Max 3.5 to 5.0V @ 1µA Max RF OUT GND ormation Model No. AT-358 PIN GND CI GND GND Package TO-8-2 Truth T a bl e C1 0 1 Specifications Subject to Change Without Notice. GND RF IN 1. All specifications apply with 50 ohm impedance connected to all RF ports, with +5 VDC bias voltage. 2. Above reference insertion loss. 3. Contact the factoy for standard or custom screening requirements. Or dering Inf GND 10dB GND +5 VDC @ 1 mA Max GND op Vie w) State Reference Loss Attenuation V2.01 1-Bit, 10 dB, GaAs Digital Attenuator AT-358 Absolute Maximum Ratings Absolute Maximum1 Parameter Max. Input Power 0.05 GHz 0.5 – 2.0 GHz Bias Voltage Control Voltage Operating Temperature Storage Temperature +27 dBm +32 dBm 0.5 to +7 V -0.5 to V bias + 0.5 V –55˚C to +125˚C –65˚C to +150˚C 1. Operation of this device above any one of these parameters may cause permanent damage. Typical Performance 0 VSWR vs FREQUENCY REFERENCE INSERTION LOSS vs FREQUENCY 2.0 1.8 -0.5 VSWR LOSS (dB) LOSS STATE -1.0 -1.5 1.6 1.4 ATTENUATION STATE 1.2 -2.0 1.0 -2.5 0.02 0.5 1.0 1.5 2.0 0.02 0.5 1.0 1.5 2.0 FREQUENCY (GHz) FREQUENCY (GHz) DEVIATION FROM NOMINAL ATTENUATION (dB) ATTENUATION FLATNESS vs FREQUENCY +0.5 +0.25 0 -0.25 -0.5 0.02 0.5 1.0 1.5 2.0 FREQUENCY (GHz) Specifications Subject to Change Without Notice. V2.01