HTSEMI 1SS181

1SS181
SOT-23
FEATURES
y
Low forward voltage
: VF(3)=0.92V(typ.)
y
Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: A3
1. CATHODE
2. CATHODE
3. ANODE
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
85
V
DC Blocking
VR
80
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
100
mA
Power Dissipation
PD
150
mW
Junction temperature
TJ
125
℃
TSTG
-55-125
℃
Voltage
Storage temperature range
Electrical Characteristics @TA=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Symbol
Min.
V (BR)R
80
Typ.
Max.
Unit
Conditions
V
IR=100μA
VF1
0.61
V
IF=1mA
VF2
0.74
V
IF=10mA
VF3
0.92
1.2
V
IF=100mA
IR1
0.1
uA
VR=30V
IR2
0.5
uA
VR=80V
Capacitance between terminals
CT
2.2
4.0
pF
VR=0,f=1MHz
Reverse recovery time
t rr
1.6
4.0
ns
IF=IR=10mA,Irr=0.1×IR
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
1SS181
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05